公开(公告)号：JP2002006509A

公开(公告)日：2002-01-09

申请号：JP2000192027

申请日：2000-06-27

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI ,  KOIKE KAORU

IPC: G03F7/20 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To provide an exposure method, by which a pattern having satisfactory dimensional accuracy can be obtained through pattern formation with a charged particle beam, and to provide a method for producing a master disk of an optical disk. SOLUTION: In the exposure method in which the surface of a substrate 1, which moves in a prescribed direction L at a prescribed rate is irradiated with an electron beam 5 under on-off control to form a pattern in a resist film 3 on the surface of the substrate 1, the irradiation position is deflected in the moving direction L of the substrate 1 at a prescribed rate set, for every pattern formed with the electron beam 5, on the basis of the optimum light exposure obtained by pilot study. The rate of deviation of the electron beam 5 is set, at such a value as to obtain optimum light exposure for every pattern of designed size formed with the electron beam 5.

公开(公告)号：JP2001318471A

公开(公告)日：2001-11-16

申请号：JP2000139484

申请日：2000-05-12

Applicant: SONY CORP

Inventor： YOSHIZAWA NORITSUGU ,  YOSHIZAWA MASAKI ,  MORIYA SHIGERU

IPC: G03F7/26 ,  G03B27/32 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic method in which processing conditions can be easily and accurately optimized through a small number of experiments. SOLUTION: A resist pattern is formed by performing an orthogonal experiment using orthogonal coordinates with processing conditions in lithography as factors and the edge roughness of the resist pattern is obtained as a characteristic value. Such level values as to reduce the edge roughness are selected among the level values of the factors set in the orthogonal experiment and lithography is carried out. In orthogonal experiments with high reproducibility, a change in processing conditions is reflected with good reproducibility, and since the edge roughness having the relation of linearity with resolution is used as a characteristic value, the effect of each processing condition to resolution is more accurately grasped with good reproducibility.

公开(公告)号：JP2001013672A

公开(公告)日：2001-01-19

申请号：JP18011599

申请日：1999-06-25

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: H01L21/027 ,  G03F1/20 ,  G03F1/84 ,  G03F1/08 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide an exposure method and an exposure device by which the degree of the deterioration of a pattern imparting member (mask or the like) for giving a pattern which is to be transferred to a material to be exposed is easily and appropriately known and the quality control of the pattern imparting member is efficiently performed. SOLUTION: In this exposure method for transferring the pattern to the material to be exposed by exposure in pattern shape, the quality of the pattern imparting member for giving the pattern which is to be transferred is controlled based on the evaluation (for example, evaluation reference A) of the edge roughness of the pattern formed by exposure. In this exposure device for transferring the pattern to the material to be exposed through exposure in the pattern shape by using the pattern imparting member for giving the pattern which is to be transferred, the edge roughness of the pattern formed by the exposure is evaluated and the pattern imparting member replacement is performed based on the evaluation.

公开(公告)号：JPH10241341A

公开(公告)日：1998-09-11

申请号：JP4076397

申请日：1997-02-25

Applicant: SONY CORP

Inventor： SAKAMA MITSUNORI ,  HIRAMOTO TAKAO ,  KIYOTA MASAHIRO ,  TAKAYAMA YOSHIHISA ,  YOSHIZAWA MASAKI ,  MAEKAWA KATSUMI ,  KOSEKI KAZUYA

IPC: G11B25/06 ,  G11B33/12

Abstract: PROBLEM TO BE SOLVED: To use a magnetic tape to as fixing type recording media without considering the interchangeability by housing all of the magnetic tape, running means and recording/reproducing means in one hermetically sealed case. SOLUTION: A pair of tape reels 3, 4, supply/take-up reel motors 6/7, capstan 8, pinch-roller 10, multi-channel rotary head drum 11, tape guides 13, 14, 15, 16, tension regulators 17, 18, etc., are arranged in the hermetically sealed case 2 which is formed by a light metal alloy such as an aluminum, etc., or a heat- resistant synthetic resin, etc. A circuit board for various signal processings, interface with the outside and motor driving is mounted in parallel with the hermetically sealed case 2. Thus, the reliability is increased by accurately controlling the tape tension and acceleration-deceleration, and the recording capacity in the same volume as compared with a hard disk is remarkably increased, then the extreme long time information is recorded.

公开(公告)号：JP2003077819A

公开(公告)日：2003-03-14

申请号：JP2001269269

申请日：2001-09-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOSHIZAWA MASAKI

IPC: G03F1/20 ,  G03F7/20 ,  H01L21/027 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To provide a mask for electron beam lithography, a mask manufacturing method, an exposure method and a semiconductor device manufacturing method which transfers a fine pattern, without forming holes of high aspect ratio.
SOLUTION: The exposure method for transferring a mask pattern onto an exposure surface has the surface irradiated with an electron beam EB via a mask having holes 2 formed in a specified mask pattern on a thin film 1, such that the irradiated electron beam EB is not parallel to the holes. The mask used therefor has holes 2 oblique or perpendicular to the thin film 1. The semiconductor device manufacturing method comprises an electron beam lithographic process which uses such a mask.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供电子束光刻用掩模，掩模制造方法，曝光方法和半导体器件制造方法，其转印精细图案，而不形成高纵横比的孔。 解决方案：用于将掩模图案转印到曝光表面上的曝光方法具有通过在薄膜1上以指定的掩模图案形成的孔2的掩模用电子束EB照射的表面，使得照射的电子束EB不 平行于孔。 为此使用的掩模具有与薄膜1倾斜或垂直的孔2.半导体器件制造方法包括使用这种掩模的电子束光刻工艺。

公开(公告)号：JP2002082915A

公开(公告)日：2002-03-22

申请号：JP2000274640

申请日：2000-09-11

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: G06K19/10 ,  G06F21/20 ,  G06K17/00 ,  G07F7/10 ,  G09C1/00 ,  H04L9/32 ,  G06F15/00

Abstract: PROBLEM TO BE SOLVED: To provide an authentication method capable of improving the reliability of personal identification by preventing a module to be used for the personal identification such as an IC card from being easily duplicated. SOLUTION: An electronic circuit having a hardware constitution corresponding to a prescribed arithmetic operation for authentication set in the IC of an IC card 3 performs an arithmetic operation for authentication by using a password and data generated at random by an authentication device 6. Also, the authentication device 6 performs an arithmetic operation for authentication in the same way, and compares an arithmetic result received from the IC card 3 with the arithmetic result obtained by itself, and when they are made coincident, the authentication device authenticates that the user of the IC card 3 is a legal user.

公开(公告)号：JP2001148543A

公开(公告)日：2001-05-29

申请号：JP32913799

申请日：1999-11-19

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: H01L21/302 ,  H01L21/20 ,  H01L21/205 ,  H01L21/3065 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve the performance of a light-emitting element and make its service life long by forming a III nitride semiconductor layer, having no dislocation on a substrate. SOLUTION: This manufacturing method comprises steps of epitaxially growing a first III nitride semiconductor layer 12 on a substrate 11, removing first portions of the first III nitride semiconductor layer 12, while leaving prescribed portions, epitaxially growing a crystal to regions formed by the removal from the first portions of the first III nitride semiconductor layer 12 left to form a second III nitride semiconductor layer 14, removing at least the left first III nitride semiconductor layer 12, while leaving prescribed portions of the second III nitride semiconductor layer 14, and epitaxially growing a crystal from the left second III nitride semiconductor layer 14 to regions formed by the removal, to form a third III nitride semiconductor layer 16.

公开(公告)号：JP2000150458A

公开(公告)日：2000-05-30

申请号：JP32183298

申请日：1998-11-12

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: H01L21/302 ,  C23F1/02 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a semiconductor device, wherein a layer formed on the rear surface side of a semiconductor element formation surface is removed by preventing etching on the semiconductor element formation surface, without forming a protective layer on the semiconductor element formation surface of a semiconductor wafer. SOLUTION: A semiconductor element is formed on one surface of semiconductor wafer 10 while a layer 11 which is to be removed is formed on the other surface of it, and then only the other surface of it is selectively exposed to an etching agent 5 such as etching gas or etching liquid while an inert gap 4 is blown to one surface of it to remove the layer 11. Since only the rear surface side of the semiconductor element formation surface of the semiconductor wafer 10 is selectively exposed to the etching agent, an etching on the semiconductor element formation surface is prevented without forming a protective layer such as a protective film or coating agent on the semiconductor element formation surface of it, to remove the layer which is to be removed formed on the rear surface side of the semiconductor element formation surface.

公开(公告)号：JP2000150336A

公开(公告)日：2000-05-30

申请号：JP31373598

申请日：1998-11-04

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: H01J37/09 ,  G03F7/20 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam aligner and a method capable of forming a highly accurate pattern, by compensating deformation of a pattern form even when the extension of charged particle beam is caused by the amount of coulomb. SOLUTION: A charged particle beam aligner has an aperture mask with a formation opening part for forming a cross sectional form of charged particle beams and used for exposing a pattern, according to the form of formation opening, onto an exposing object. In this case, a field with given intensity and a given distribution in potential is formed in formation opening parts 6a, 10a, 10b of the aperture masks 6 and 10 to change the cross section of charged perticle beams (EB), which pass the formation opening parts 6a, 10a, and 10b, into desired form with desired dimensions.

公开(公告)号：JP2000116175A

公开(公告)日：2000-04-21

申请号：JP27866798

申请日：1998-09-30

Applicant: SONY CORP

Inventor： YOSHIZAWA MASAKI

IPC: H02K29/08 ,  H02P6/06 ,  H02P6/08 ,  H02P6/16

Abstract: PROBLEM TO BE SOLVED: To provide a brushless motor having a high productivity wherein its highly accurate rotational control is possible independently of the accuracies of the attaching positions of its Hall elements. SOLUTION: In this brushless motor, pulses are generated respectively by a pulse generating section 11 based on the output of every Hall element to measure by a pulse-time-interval measuring section 12 the time interval between two successive pulses as for the pulses of every Hall element. In a pulse-time- difference measuring section 13, the time difference between the two successive time-intervals of the pulses is measured. In a control-signal generating section 14, based on the time differences, a rotational reference signal inputted from a servo-reference-signal generating section 15, and the outputs of the Hall elements, the control signals for the selections of the driving coils of the brushless motor and for the directions and values of its driving currents are generated, respectively. In a driving section 16, based on the control signals fed from the control-signal generating section 14, the currents having respectively predetermined values and directions are so made to flow through the predetermined coils of the brushless motor as to perform its rotational control.