公开(公告)号：FR2828764A1

公开(公告)日：2003-02-21

申请号：FR0110868

申请日：2001-08-16

Applicant: ST MICROELECTRONICS SA

Inventor： MALLARDEAU CATHERINE ,  MAZOYER PASCALE ,  PIAZZA MARC

IPC: H01L21/02 ,  H01L21/8242 ,  H01L27/108

Abstract: The invention relates to an integrated circuit comprising: a capacitor (23) which is disposed on top of a substrate (1) inside a first cavity in a dielectric material; a first electrode; a second electrode; a fine dielectric layer which is disposed between the two electrodes; and a structure (7) which connects to the capacitor. Said connecting structure is disposed at the same level as the capacitor in a second cavity which is narrower than the first, said second cavity being entirely filled up by an extension of at least one of the electrodes of the capacitor.

公开(公告)号：FR2784798B1

公开(公告)日：2002-03-01

申请号：FR9813034

申请日：1998-10-14

Applicant: ST MICROELECTRONICS SA

Inventor： CIAVATTI JEROME ,  MAZOYER PASCALE

IPC: H01L21/8242