21.
    发明专利
    未知

    公开(公告)号:DE60130947T2

    公开(公告)日:2008-07-31

    申请号:DE60130947

    申请日:2001-08-16

    Abstract: The fabrication of a metal plate capacitor in the metallisation levels above an integrated circuit consists of depositing an insulating layer (11) of between 0.5 and 1.5 microns on the surface of an integrated circuit (10). Method then involves grooving the insulating layer to form slabs (12), depositing and smoothing a metallic material (14) to form conducting lines (L1, L2, L3, L4) in the slabs, locally drawing the insulating layer to eliminate all the gaps separating two conducting lines, depositing a dielectric layer (16) and depositing and engraving a second metallic material (17) to at least completely fill the inter-line gaps.

    Integrated circuit with electromechanical component includes cavity defined between two substrates for auxiliary component

    公开(公告)号:FR2833106A1

    公开(公告)日:2003-06-06

    申请号:FR0115594

    申请日:2001-12-03

    Abstract: The circuit includes a first semiconductor substrate supporting the electronic circuit, and a second substrate carrying an electromechanical component. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component. The first phase of manufacture includes forming the semiconductor chip (PC) within a first substrate, and forming a cavity in the upper surface of this substrate to accommodate an auxiliary component. A wall remains around the cavity, leaving the cavity as a well. The second phase includes formation of the auxiliary component (CAX) on a second semiconductor substrate (SB2), separate from the first. The second substrate is then turned over and applied to the first substrate as a lid with the auxiliary component hanging within the cavity of the first substrate. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component.

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