公开(公告)号：DE69518849T2

公开(公告)日：2001-01-11

申请号：DE69518849

申请日：1995-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  TONTI ALESSANDRO

IPC: H01J9/02

公开(公告)号：IT1252056B

公开(公告)日：1995-05-29

申请号：ITMI913121

申请日：1991-11-22

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L ,  H05K

公开(公告)号：ITMI20022785A1

公开(公告)日：2004-06-30

申请号：ITMI20022785

申请日：2002-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  CLEMENTI CESARE ,  PAVAN ALESSIA

IPC: G11B20060101 ,  H01L21/302 ,  H01L21/461 ,  H01L21/8247 ,  H01L27/115

公开(公告)号：DE69530978T2

公开(公告)日：2004-04-22

申请号：DE69530978

申请日：1995-08-01

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: G09G3/22 ,  H01J1/304 ,  H01J31/12 ,  G09G1/00 ,  H01J9/02 ,  G09G3/28

Abstract: A pixel emission current limiting resistance is realized by forming a stack of alternately doped amorphous or polycrystalline silicon layers over the cathodic conductors of a FED driving matrix. The stack of amorphous or polycrystalline silicon layers doped alternately n and p provides at least a reversely biased n/p junction having a leakage current that matches the required level of pixel emission current. The reversely biased junction constitutes a nonlinear series resistance that is quite effective in limiting the emission current through anyone of the microtips that form an individually excitable pixel and which are formed on the uppermost layer of the stack.

公开(公告)号：DE69230025T2

公开(公告)日：2000-01-05

申请号：DE69230025

申请日：1992-11-10

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/485

公开(公告)号：ITMI20022784A1

公开(公告)日：2004-06-30

申请号：ITMI20022784

申请日：2002-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  CLEMENTI CESARE ,  PAVAN ALESSIA

IPC: G11B20060101 ,  H01L21/302 ,  H01L21/461 ,  H01L21/8247 ,  H01L27/115

公开(公告)号：DE69722403T2

公开(公告)日：2004-01-15

申请号：DE69722403

申请日：1997-09-23

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: G06K19/077 ,  G07D7/01 ,  G07D7/00

Abstract: The present invention relates to a currency note (BN) provided with an identification and/or authentication element consisting of an integrated circuit (IC) which can store, securely in electronic form, accessible from outside, such information as: the value, serial number, issuer, and date of issuance.

公开(公告)号：DE69531294D1

公开(公告)日：2003-08-21

申请号：DE69531294

申请日：1995-07-20

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: G09G3/22 ,  H01J31/12

公开(公告)号：DE69530978D1

公开(公告)日：2003-07-10

申请号：DE69530978

申请日：1995-08-01

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO

IPC: G09G3/22 ,  H01J1/304 ,  H01J31/12 ,  G09G1/00 ,  H01J9/02 ,  G09G3/28

Abstract: A pixel emission current limiting resistance is realized by forming a stack of alternately doped amorphous or polycrystalline silicon layers over the cathodic conductors of a FED driving matrix. The stack of amorphous or polycrystalline silicon layers doped alternately n and p provides at least a reversely biased n/p junction having a leakage current that matches the required level of pixel emission current. The reversely biased junction constitutes a nonlinear series resistance that is quite effective in limiting the emission current through anyone of the microtips that form an individually excitable pixel and which are formed on the uppermost layer of the stack.

公开(公告)号：DE69621017T2

公开(公告)日：2002-10-31

申请号：DE69621017

申请日：1996-10-04

Applicant: ST MICROELECTRONICS SRL

Inventor： BALDI LIVIO ,  MARANGON MARIA SANTINA

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L29/66 ,  H01J1/30