公开(公告)号：DE60206132D1

公开(公告)日：2005-10-20

申请号：DE60206132

申请日：2002-01-31

Applicant: ST MICROELECTRONICS SRL

Inventor： SAGGIO MARIO ,  COFFA SALVATORE ,  FRISINA FERRUCCIO

IPC: H04B10/80 ,  H04B10/00

公开(公告)号：ITTO20030425A1

公开(公告)日：2004-12-07

申请号：ITTO20030425

申请日：2003-06-06

Applicant: ST MICROELECTRONICS SRL

Inventor： BEVILACQUA MARIA FORTUNA ,  CASTORINA SALVATORE ,  COFFA SALVATORE ,  MAGLIONE MARIA GRAZIA ,  OCCHIPINTI LUIGI ,  PORTICO AMBROSIO MICHELE

IPC: H01H20060101

公开(公告)号：AU1383501A

公开(公告)日：2001-03-26

申请号：AU1383501

申请日：2000-09-01

Applicant: ST MICROELECTRONICS SRL

Inventor： COFFA SALVATORE ,  LIBERTINO SEBANIA ,  SAGGIO MARIO ,  FRISINA FERRUCCIO

IPC: H01S3/16 ,  H01S5/30 ,  H01S5/32

Abstract: The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.