公开(公告)号：EP3965149A1

公开(公告)日：2022-03-09

申请号：EP21194172.9

申请日：2021-08-31

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  SAGGIO, Mario Giuseppe

IPC: H01L23/31 ,  H01L29/872

Abstract: A manufacturing method of an anchorage element (82) of a passivation layer (69), comprising: forming, in a semiconductor body (80) made of SiC and at a distance from a top surface (52a) of the semiconductor body (80), a first implanted region (84) having, along a first axis (X), a first maximum dimension (di); forming, in the semiconductor body (80), a second implanted region (85), which is superimposed to the first implanted region (84) and has, along the first axis (X), a second maximum dimension (d 2 ) smaller than the first maximum dimension (di); carrying out a process of thermal oxidation of the first implanted region (84) and second implanted region (85) to form an oxidized region (86'); removing said oxidized region (86') to form a cavity (83); and forming, on the top surface (52a), the passivation layer (69) protruding into the cavity (83) to form said anchorage element (82) fixing the passivation layer (69) to the semiconductor body (80).

公开(公告)号：EP3896720A1

公开(公告)日：2021-10-20

申请号：EP21167886.7

申请日：2021-04-12

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  SAGGIO, Mario Giuseppe ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L29/45 ,  H01L21/268 ,  H01L21/265 ,  H01L21/329 ,  H01L21/336 ,  H01L29/872 ,  H01L29/78 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device (50; 90), comprising the steps of: implanting, on a front side (52a; 22a) of a solid body (52; 22) made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region (59'; 34), which extends in the solid body starting from the front side (52a; 22a) and has a top surface coplanar with said front side (52a; 22a); and generating a laser beam (82; 96) directed towards the implanted region (59'; 34) in order to generate heating of the implanted region (59'; 34) to temperatures comprised between 1500°C and 2600°C so as to form a carbon-rich electrical-contact region (59"; 91) at said implanted region (59'; 34). The carbon-rich electrical-contact region (59"; 91) forms an ohmic contact.

公开(公告)号：EP3876263A1

公开(公告)日：2021-09-08

申请号：EP21161040.7

申请日：2021-03-05

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  SAGGIO, Mario Giuseppe ,  FRANCO, Giovanni

IPC: H01L21/04 ,  H01L29/66

Abstract: Method for manufacturing an electronic device (50) based on SiC, comprising the steps of: arranging a substrate (53) of SiC; forming a structural layer (52) of SiC on a front of the substrate; forming, in the structural layer (52), active regions of said electronic device (50), said active regions having a role in the generation and/or conduction of electric current during the use of the electronic device (50); forming, on the structural layer (52), a first electric terminal (58); forming an intermediate layer (72) of Titanium at the back of the substrate; heating the intermediate layer (72) by means of a LASER beam (82) in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds; and forming, on the intermediate layer, a second electric terminal (57) of the electronic device.

公开(公告)号：EP3605615A1

公开(公告)日：2020-02-05

申请号：EP19189720.6

申请日：2019-08-02

Applicant: STMicroelectronics S.r.l.

Inventor： SAGGIO, Mario Giuseppe ,  ZANETTI, Edoardo

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/12

Abstract: A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.