公开(公告)号：EP1571716A4

公开(公告)日：2012-07-25

申请号：EP04771196

申请日：2004-08-04

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAGAI YOUICHI ,  KIYAMA MAKOTO ,  NAKAMURA TAKAO ,  SAKURADA TAKASHI ,  AKITA KATSUSHI ,  UEMATSU KOJI ,  IKEDA AYAKO ,  KATAYAMA KOJI ,  YOSHIMOTO SUSUMU

IPC: H01L33/00 ,  H01L29/24 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/32 ,  H01L33/20 ,  H01L33/382 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2224/05599 ,  H01L2924/00011 ,  H01L2224/45099

公开(公告)号：EP2314738A4

公开(公告)日：2014-08-13

申请号：EP09773382

申请日：2009-06-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ARAKAWA SATOSHI ,  SAKURADA TAKASHI ,  YAMAMOTO YOSHIYUKI ,  SATOH ISSEI ,  TANIZAKI KEISUKE ,  NAKAHATA HIDEAKI ,  MIZUHARA NAHO ,  MIYANAGA MICHIMASA

IPC: C30B29/38 ,  C30B23/06 ,  G02B1/02

CPC classification number: G02B1/02 ,  C30B23/025 ,  C30B29/403 ,  C30B29/406 ,  G02B13/143 ,  Y10T428/24355 ,  Y10T428/2973

公开(公告)号：EP1758171A4

公开(公告)日：2009-04-29

申请号：EP06714948

申请日：2006-03-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HASHIMOTO SHIN ,  KIYAMA MAKOTO ,  TANABE TATSUYA ,  MIURA KOUHEI ,  SAKURADA TAKASHI

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/36 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L29/872 ,  H01L29/0878 ,  H01L29/2003 ,  H01L29/7802 ,  H01L29/8611

Abstract: Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film (65) is provided on a gallium nitride substrate (63). A layer region (67) is provided in the gallium nitride substrate (63) and the gallium nitride epitaxial film (65). An interface between the gallium nitride substrate (43) and the gallium nitride epitaxial film (65) is positioned in the layer region (67). In the layer region (67), a peak value of donor impurity along an axis from the gallium nitride substrate (63) to the gallium nitride epitaxial film (65) is 1 × 10 18 cm -3 or more. The donor impurity is at least either silicon or germanium.

公开(公告)号：EP2390387A4

公开(公告)日：2014-08-06

申请号：EP10733485

申请日：2010-01-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SAKURADA TAKASHI ,  KAWASE TOMOHIRO

IPC: C30B29/42 ,  C30B33/02

CPC classification number: H01B1/02 ,  C22F1/16 ,  C30B29/42 ,  C30B33/02 ,  Y10T428/24355

公开(公告)号：EP2246458A4

公开(公告)日：2012-03-07

申请号：EP09714366

申请日：2009-02-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SATOH ISSEI ,  MIZUHARA NAHO ,  TANIZAKI KEISUKE ,  MIYANAGA MICHIMASA ,  SAKURADA TAKASHI ,  YAMAMOTO YOSHIYUKI ,  NAKAHATA HIDEAKI

IPC: C23C14/06 ,  C23C14/28 ,  C30B23/02 ,  C30B29/38 ,  C30B29/40

CPC classification number: C30B29/403 ,  C23C14/0641 ,  C23C14/28 ,  C30B23/02

公开(公告)号：EP1876649A4

公开(公告)日：2009-04-01

申请号：EP06712047

申请日：2006-01-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIURA KOUHEI ,  KIYAMA MAKOTO ,  SAKURADA TAKASHI

IPC: H01L29/872 ,  H01L29/04 ,  H01L29/20 ,  H01L29/47

CPC classification number: H01L29/872 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/475

Abstract: A Group III nitride semiconductor device having a structure capable of enhancing of pressure tightness. Schottky diode (11) comprises Group III nitride supporting base material (13), gallium nitride region (15) and Schottky electrode (17). The Group III nitride supporting base material (13) has conductivity. The Schottky electrode (17) forms Schottky junction in the gallium nitride region (15). The gallium nitride region (15) is superimposed on the major surface (13a) of the Group III nitride supporting base material (13). The gallium nitride region (15) has a (10-12) plane XRD full width at half maximum of = 100 sec.

Abstract translation: 第III族氮化物半导体器件具有能够提高压力密封性的结构。 肖特基二极管（11）包括III族氮化物支撑基材（13），氮化镓区域（15）和肖特基电极（17）。 III族氮化物支撑基材（13）具有导电性。 肖特基电极（17）在氮化镓区域（15）中形成肖特基结。 氮化镓区域（15）叠置在III族氮化物支撑基材（13）的主表面（13a）上。 氮化镓区域（15）具有（10-12）平面XRD半峰全宽= 100秒。

公开(公告)号：EP2322698A4

公开(公告)日：2015-07-08

申请号：EP09809936

申请日：2009-08-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ARAKAWA SATOSHI ,  MIYANAGA MICHIMASA ,  SAKURADA TAKASHI ,  YAMAMOTO YOSHIYUKI ,  NAKAHATA HIDEAKI

IPC: C30B29/40 ,  B24B1/00 ,  C30B25/00 ,  C30B33/00 ,  H01L21/02 ,  H01L21/304

CPC classification number: H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

公开(公告)号：EP2287370A4

公开(公告)日：2012-11-28

申请号：EP09754637

申请日：2009-05-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ARAKAWA SATOSHI ,  SAKURADA TAKASHI ,  MIYANAGA MICHIMASA ,  TANIZAKI KEISUKE ,  MIZUHARA NAHO ,  SATOH ISSEI ,  NAKAHATA HIDEAKI

IPC: C30B29/38 ,  H01L21/3065 ,  H05H1/46

CPC classification number: C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02631 ,  Y10T428/24355

公开(公告)号：EP2251463A4

公开(公告)日：2011-06-01

申请号：EP09720908

申请日：2009-03-06

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SATOH ISSEI ,  MIZUHARA NAHO ,  TANIZAKI KEISUKE ,  MIYANAGA MICHIMASA ,  SAKURADA TAKASHI ,  NAKAHATA HIDEAKI

IPC: C30B23/08 ,  C23C14/28 ,  C30B23/06 ,  H01L21/203

CPC classification number: C30B23/066 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0254

公开(公告)号：EP1777737A4

公开(公告)日：2009-07-22

申请号：EP06728605

申请日：2006-03-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HASHIMOTO SHIN ,  KIYAMA MAKOTO ,  SAKURADA TAKASHI ,  TANABE TATSUYA ,  MIURA KOUHEI ,  MIYAZAKI TOMIHITO

IPC: H01L21/338 ,  H01L21/205 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/7787 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462

Abstract: Disclosed is a high-electron-mobility transistor having a high-purity channel layer and a high-resistance buffer layer. Specifically disclosed is a high-electron-mobility transistor (11) comprising a supporting base (13) composed of a gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and an electrode structure (a gate electrode (21), a source electrode (23) and a drain electrode (25)) for the transistor (11). The band gap of the third gallium nitride semiconductor is larger than that of the second gallium nitride semiconductor. The carbon concentration Nc1 in the first gallium nitride semiconductor is not less than 4 × 1017 cm-3, and the carbon concentration Nc2 in the second gallium nitride semiconductor is less than 4 × 1016 cm-3.