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    23.
    发明专利
    未知

    公开(公告)号：FI20065484A

    公开(公告)日：2007-09-06

    申请号：FI20065484

    申请日：2006-07-07

    Applicant: VTI TECHNOLOGIES OY

    Inventor： KUISMA HEIKKI ,  NIEMISTOE JIRI

    IPC: B81B20060101 ,  B81C3/00 ,  B81B7/02 ,  B81C1/00 ,  B81C99/00 ,  G01C19/56 ,  G01C19/5783 ,  G01P15/18 ,  H01L25/16

    Abstract: The invention relates to microelectromechanical components, like microelectromechanical gauges used in measuring e.g. acceleration, angular acceleration, angular velocity, or other physical quantities. The microelectromechanical component, according to the invention, comprises, suitably bonded to each other, a microelectromechanical chip part sealed by a cover part, and at least one electronic circuit part. The aim of the invention is to provide an improved method of manufacturing a microelectromechanical component, and to provide a microelectromechanical component, which is applicable for use particularly in small microelectromechanical sensor solutions.

    24.
    发明专利
    未知

    公开(公告)号：DE112004000353T5

    公开(公告)日：2006-01-26

    申请号：DE112004000353

    申请日：2004-02-11

    Applicant: VTI TECHNOLOGIES OY VANTAA

    Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

    IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125

    Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode ( 4 ) and a stationary electrode ( 5 ), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

    25.
    发明专利
    未知

    公开(公告)号：FI20055323A0

    公开(公告)日：2005-06-17

    申请号：FI20055323

    申请日：2005-06-17

    Applicant: VTI TECHNOLOGIES OY

    Inventor： KUISMA HEIKKI

    IPC: G01P20060101 ,  G01P15/08 ,  G01P15/125 ,  G01P15/18 ,  G01P

    Abstract: The present invention relates to measuring devices used in measuring acceleration and, more precisely, to capacitive acceleration sensors. The object of the invention is to provide an improved method of manufacturing a capacitive acceleration sensor, and to provide a capacitive acceleration sensor, which is applicable for use in small capacitive acceleration sensor solutions, and which, in particular, is applicable for use in small and extremely thin capacitive acceleration sensor solutions measuring acceleration in relation to several axes.

    26.
    发明专利
    未知

    公开(公告)号：DE10392273T5

    公开(公告)日：2005-03-10

    申请号：DE10392273

    申请日：2003-02-10

    Applicant: VTI TECHNOLOGIES OY VANTAA

    Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

    IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

    Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

    27.
    发明专利
    未知

    公开(公告)号：FI114825B

    公开(公告)日：2004-12-31

    申请号：FI20020292

    申请日：2002-02-13

    Applicant: VTI TECHNOLOGIES OY

    Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

    IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

    Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

    28.
    发明专利
    未知

    公开(公告)号：FI113704B

    公开(公告)日：2004-05-31

    申请号：FI20010582

    申请日：2001-03-21

    Applicant: VTI TECHNOLOGIES OY

    Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

    IPC: G01P15/00 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/84

    Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer ( 10 ) is formed by etched openings at least one spring element configuration ( 7 ) and at least one seismic mass ( 8 ) connected to said spring element configuration ( 7 ). According to the invention, the openings and trenches ( 8 ) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration ( 7 ) is based on wet etch methods.

    29.
    发明专利
    未知

    公开(公告)号：FI20020292A

    公开(公告)日：2003-11-20

    申请号：FI20020292

    申请日：2002-02-13

    Applicant: VTI TECHNOLOGIES OY

    Inventor： KUISMA HEIKKI ,  LAHDENPERAE JUHA ,  MUTIKAINEN RISTO

    IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  G01L9/12

    Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d 2 ) of the partial area of the insulating layer is less than a thickness (d 1 ) of the support areas of the insulating area.

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