Nanostructure field emission cathode structure and method for making
    24.
    发明授权
    Nanostructure field emission cathode structure and method for making 有权
    纳米结构场发射阴极结构及制备方法

    公开(公告)号:US09053890B2

    公开(公告)日:2015-06-09

    申请号:US13958120

    申请日:2013-08-02

    Abstract: Various embodiments are described herein for nanostructure field emission cathode structures and methods of making these structures. These structures generally comprise an electrode field emitter comprising a resistive layer having a first surface, a connection pad having a first surface disposed adjacent to the first surface of the resistive layer, and a nanostructure element for emitting electrons in use, the nanostructure element being disposed adjacent to a second surface of the connection pad that is opposite the first surface of the connection pad. Some embodiments also include a coaxial gate electrode that is disposed about the nanostructure element.

    Abstract translation: 本文描述了用于纳米结构场发射阴极结构和制造这些结构的方法的各种实施例。 这些结构通常包括电极场发射器,其包括具有第一表面的电阻层,具有邻近电阻层的第一表面设置的第一表面的连接焊盘和用于在使用中发射电子的纳米结构元件,所述纳米结构元件被布置 邻近连接垫的与连接垫的第一表面相对的第二表面。 一些实施例还包括围绕纳米结构元件设置的同轴栅电极。

    NANOSTRUCTURE FIELD EMISSION CATHODE STRUCTURE AND METHOD FOR MAKING
    26.
    发明申请
    NANOSTRUCTURE FIELD EMISSION CATHODE STRUCTURE AND METHOD FOR MAKING 有权
    纳米结构场发射阴极结构及制备方法

    公开(公告)号:US20150035428A1

    公开(公告)日:2015-02-05

    申请号:US13958120

    申请日:2013-08-02

    Abstract: Various embodiments are described herein for nanostructure field emission cathode structures and methods of making these structures. These structures generally comprise an electrode field emitter comprising a resistive layer having a first surface, a connection pad having a first surface disposed adjacent to the first surface of the resistive layer, and a nanostructure element for emitting electrons in use, the nanostructure element being disposed adjacent to a second surface of the connection pad that is opposite the first surface of the connection pad. Some embodiments also include a coaxial gate electrode that is disposed about the nanostructure element.

    Abstract translation: 本文描述了用于纳米结构场发射阴极结构和制造这些结构的方法的各种实施例。 这些结构通常包括电极场发射器,其包括具有第一表面的电阻层,具有邻近电阻层的第一表面设置的第一表面的连接焊盘和用于在使用中发射电子的纳米结构元件,所述纳米结构元件被布置 邻近连接垫的与连接垫的第一表面相对的第二表面。 一些实施例还包括围绕纳米结构元件设置的同轴栅电极。

    Field emission electron gun and electron beam applied device using the same
    28.
    发明授权
    Field emission electron gun and electron beam applied device using the same 有权
    场发射电子枪和电子束施加装置使用相同

    公开(公告)号:US07732764B2

    公开(公告)日:2010-06-08

    申请号:US11831989

    申请日:2007-08-01

    Abstract: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

    Abstract translation: 本发明的目的是使得能够容易地调整由其上安装有由纤维状碳材料构成的电子枪的场发射电子枪的电子束的光轴。 此外,还要获得能量扩散比电子枪窄的电子束。 此外,还提供安装在其上的高分辨率电子束施加装置的场致发射电子枪。 用于实现本发明的目的的手段在于,在场发射电子枪中包括具有带隙的材料的纤维状碳材料包括由纤维状碳材料构成的电子源和用于 支撑纤维状碳材料,用于场发射电子的提取器和用于加速电子的加速器。 此外,还将场致发射电子枪应用于各种电子束施加装置。

    NOVEL HIGH PERFORMANCE MATERIALS AND PROCESSES FOR MANUFACTURE OF NANOSTRUCTURES FOR USE IN ELECTRON EMITTER ION AND DIRECT CHARGING DEVICES
    29.
    发明申请
    NOVEL HIGH PERFORMANCE MATERIALS AND PROCESSES FOR MANUFACTURE OF NANOSTRUCTURES FOR USE IN ELECTRON EMITTER ION AND DIRECT CHARGING DEVICES 失效
    用于电子发射器和直接充电装置的新型高性能材料和制造用于制造纳米结构的方法

    公开(公告)号:US20090224679A1

    公开(公告)日:2009-09-10

    申请号:US12042878

    申请日:2008-03-05

    Abstract: In accordance with the invention, there are electron emitters, charging devices, and methods of forming them. An electron emitter array can include a plurality of nanostructures, each of the plurality of nanostructures can include a first end and a second end, wherein the first end can be connected to a first electrode and the second end can be positioned to emit electrons, and wherein each of the plurality of nanostructures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, doped metal oxides, and ceramics. The electron emitter array can also include a second electrode in close proximity to the first electrode, wherein one or more of the plurality of nanostructures can emit electrons in a gas upon application of an electric field between the first electrode and the second electrode.

    Abstract translation: 根据本发明,存在电子发射器,充电装置及其形成方法。 电子发射器阵列可以包括多个纳米结构,多个纳米结构中的每一个可以包括第一端和第二端,其中第一端可以连接到第一电极,并且第二端可以被定位成发射电子,以及 其中所述多个纳米结构中的每一个可以由抗氧化金属,掺杂金属,金属合金,金属氧化物,掺杂金属氧化物和陶瓷中的一种或多种形成。 电子发射器阵列还可以包括紧邻第一电极的第二电极,其中在第一电极和第二电极之间施加电场时,多个纳米结构中的一个或多个可以在气体中发射电子。

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