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    SPIN-POLARIZED ELECTRON SOURCE AND SPIN-POLARIZED SCANNING TUNNELING MICROSCOPE
    23.
    发明申请
    SPIN-POLARIZED ELECTRON SOURCE AND SPIN-POLARIZED SCANNING TUNNELING MICROSCOPE 有权
    旋转极化电子源和旋转极化扫描隧道显微镜

    公开(公告)号：US20080073554A1

    公开(公告)日：2008-03-27

    申请号：US11559842

    申请日：2006-11-14

    Applicant: WEN-HUI DUAN ,  SHAO-GANG HAO ,  GANG ZHOU ,  JIAN WU ,  BING-LIN GU

    Inventor： WEN-HUI DUAN ,  SHAO-GANG HAO ,  GANG ZHOU ,  JIAN WU ,  BING-LIN GU

    IPC: H01T23/00

    CPC classification number: H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

    Abstract: An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

    Abstract translation: 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。

    X-RAY DEVICE
    25.
    发明申请
    X-RAY DEVICE 审中-公开
    X射线装置

    公开(公告)号：US20170011880A1

    公开(公告)日：2017-01-12

    申请号：US15117872

    申请日：2015-02-10

    Applicant: LUXBRIGHT AB

    Inventor： Qui-Hong Hu

    IPC: H01J35/06

    CPC classification number: H01J35/065 ,  G01N23/046 ,  G01N23/22 ,  G01V5/00 ,  H01J35/32 ,  H01J2201/30488 ,  H01J2201/30496

    Abstract: Example embodiments presented herein are directed towards an x-ray generating device. The device comprises at least one electron emitter(s) (22, 22_1, 22_2, 22_3) which has an electrically conductive substrate (23). The electrically conductive substrate comprises a coating of nanostructures (24). The device further comprises a heating element (21) attachable to each electrically conductive substrate. The device further comprises an electron receiving component (14) configured to receiving electrons emitted from the at least one electron emitter(s). The device also comprises an evacuated enclosure (10) configured to house the at least one electron emitter(s), the heating element and the electron receiving component. The at least one electron emitter(s) is configured for Schottky emission when the heating element is in an on-state and the at least one electron emitter(s) is negatively biased.

    Abstract translation: 本文呈现的示例性实施例针对x射线产生装置。 该器件包括至少一个具有导电衬底（23）的电子发射器（22,22_1,22_2,22_3）。 导电基底包括纳米结构的涂层（24）。 该装置还包括可连接到每个导电基底的加热元件（21）。 该装置还包括被配置为接收从至少一个电子发射器发射的电子的电子接收部件（14）。 该装置还包括被构造成容纳至少一个电子发射器，加热元件和电子接收部件的抽真空的外壳（10）。 当加热元件处于导通状态并且所述至少一个电子发射器被负偏压时，所述至少一个电子发射器被配置为用于肖特基发射。

    NANO GRANULAR MATERIALS (NGM) MATERIAL, METHODS AND ARRANGEMENTS FOR MANUFACTURING SAID MATERIAL AND ELECTRICAL COMPONENTS COMPRISING SAID MATERIAL
    26.
    发明申请
    NANO GRANULAR MATERIALS (NGM) MATERIAL, METHODS AND ARRANGEMENTS FOR MANUFACTURING SAID MATERIAL AND ELECTRICAL COMPONENTS COMPRISING SAID MATERIAL 有权
    纳米颗粒材料（NGM）材料，制造材料的方法和装置以及包含上述材料的电气部件

    公开(公告)号：US20150255239A1

    公开(公告)日：2015-09-10

    申请号：US14426583

    申请日：2013-09-06

    Applicant: HAWILKO GMBH

    Inventor： Hans W.P. Koops

    IPC: H01J1/304 ,  C23C14/28 ,  H01J19/38 ,  C23C14/30 ,  H01J19/57 ,  H01J43/24

    CPC classification number: H01J1/304 ,  B82Y10/00 ,  C23C14/28 ,  C23C14/30 ,  H01B1/14 ,  H01B1/16 ,  H01B1/20 ,  H01B1/22 ,  H01J9/025 ,  H01J19/38 ,  H01J19/57 ,  H01J43/246 ,  H01J2201/3048 ,  H01J2201/30488 ,  H01J2201/30496

    Abstract: Nano granular materials (NGM) are provided that have the extraordinary capability to conduct current in a 100 fold current density compared to high Tc superconductors by charges moving in form of Bosons produced by Bose-Einstein-Condensation (BEC) in overlapping excitonic surface orbital states at room temperature and has a light dependent conductivity. The material is disposed between electrically conductive connections and is a nano-crystalline composite material. Also provided are electrical components comprising NGM and methods and arrangements for making it by corpuscular-beam induced deposition applied to a substrate, using inorganic compounds being adsorbed on the surface of the substrate owing to their vapor pressure, and which render a crystalline conducting phase embedded in an inorganic insolating matrix enclosing the material.

    Abstract translation: 提供了纳米颗粒材料（NGM），其具有超高功率的电流，与通过Bose-Einstein-Condensation（BEC）以重叠的激子表面轨道状态产生的波斯形式的高Tc超导体相比，以100倍的电流密度传导电流 在室温下具有光依赖性的导电性。 该材料设置在导电连接之间，并且是纳米晶复合材料。 还提供了包括NGM的电气部件以及通过由基于蒸气压吸附在基板的表面上的无机化合物而使其通过粒子束感应沉积施加到基板上的方法和装置，并且使得晶体导电相嵌入 在封闭材料的无机绝缘基体中。

    Field emission electron gun and electron beam applied device using the same
    28.
    发明授权
    Field emission electron gun and electron beam applied device using the same 有权
    场发射电子枪和电子束施加装置使用相同

    公开(公告)号：US07732764B2

    公开(公告)日：2010-06-08

    申请号：US11831989

    申请日：2007-08-01

    Applicant: Tadashi Fujieda ,  Makoto Okai ,  Kishio Hidaka ,  Mitsuo Hayashibara ,  Shunichi Watanabe

    Inventor： Tadashi Fujieda ,  Makoto Okai ,  Kishio Hidaka ,  Mitsuo Hayashibara ,  Shunichi Watanabe

    IPC: H01J31/073 ,  H01J37/26 ,  H01J37/30

    CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/3174 ,  H01J2201/3043 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30496 ,  H01J2237/06341 ,  H01J2237/26

    Abstract: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

    Abstract translation: 本发明的目的是使得能够容易地调整由其上安装有由纤维状碳材料构成的电子枪的场发射电子枪的电子束的光轴。 此外，还要获得能量扩散比电子枪窄的电子束。 此外，还提供安装在其上的高分辨率电子束施加装置的场致发射电子枪。 用于实现本发明的目的的手段在于，在场发射电子枪中包括具有带隙的材料的纤维状碳材料包括由纤维状碳材料构成的电子源和用于 支撑纤维状碳材料，用于场发射电子的提取器和用于加速电子的加速器。 此外，还将场致发射电子枪应用于各种电子束施加装置。

    NOVEL HIGH PERFORMANCE MATERIALS AND PROCESSES FOR MANUFACTURE OF NANOSTRUCTURES FOR USE IN ELECTRON EMITTER ION AND DIRECT CHARGING DEVICES
    29.
    发明申请
    NOVEL HIGH PERFORMANCE MATERIALS AND PROCESSES FOR MANUFACTURE OF NANOSTRUCTURES FOR USE IN ELECTRON EMITTER ION AND DIRECT CHARGING DEVICES 失效
    用于电子发射器和直接充电装置的新型高性能材料和制造用于制造纳米结构的方法

    公开(公告)号：US20090224679A1

    公开(公告)日：2009-09-10

    申请号：US12042878

    申请日：2008-03-05

    Applicant: David H. Pan ,  Fa-Gung Fan ,  Joseph A. Swift ,  Dan A. Hays ,  Michael F. Zona

    Inventor： David H. Pan ,  Fa-Gung Fan ,  Joseph A. Swift ,  Dan A. Hays ,  Michael F. Zona

    IPC: H01J61/94

    CPC classification number: H01J1/304 ,  H01J17/066 ,  H01J2201/3043 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2201/30488 ,  H01J2201/30496

    Abstract: In accordance with the invention, there are electron emitters, charging devices, and methods of forming them. An electron emitter array can include a plurality of nanostructures, each of the plurality of nanostructures can include a first end and a second end, wherein the first end can be connected to a first electrode and the second end can be positioned to emit electrons, and wherein each of the plurality of nanostructures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, doped metal oxides, and ceramics. The electron emitter array can also include a second electrode in close proximity to the first electrode, wherein one or more of the plurality of nanostructures can emit electrons in a gas upon application of an electric field between the first electrode and the second electrode.

    Abstract translation: 根据本发明，存在电子发射器，充电装置及其形成方法。 电子发射器阵列可以包括多个纳米结构，多个纳米结构中的每一个可以包括第一端和第二端，其中第一端可以连接到第一电极，并且第二端可以被定位成发射电子，以及 其中所述多个纳米结构中的每一个可以由抗氧化金属，掺杂金属，金属合金，金属氧化物，掺杂金属氧化物和陶瓷中的一种或多种形成。 电子发射器阵列还可以包括紧邻第一电极的第二电极，其中在第一电极和第二电极之间施加电场时，多个纳米结构中的一个或多个可以在气体中发射电子。

    Spin-polarized electron source and spin-polarized scanning tunneling microscope
    30.
    发明授权
    Spin-polarized electron source and spin-polarized scanning tunneling microscope 有权
    自旋极化电子源和自旋极化扫描隧道显微镜

    公开(公告)号：US07459682B2

    公开(公告)日：2008-12-02

    申请号：US11559842

    申请日：2006-11-14

    Applicant: Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

    Inventor： Wen-Hui Duan ,  Shao-Gang Hao ,  Gang Zhou ,  Jian Wu ,  Bing-Lin Gu

    IPC: G01N23/00

    CPC classification number: H01J1/304 ,  G01Q60/16 ,  H01J2201/30434 ,  H01J2201/30488 ,  H01J2203/0296 ,  Y10S977/815 ,  Y10S977/822 ,  Y10S977/838 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/861

    Abstract: An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.

    Abstract translation: 示例性的自旋极化电子源包括阴极和由具有局部极化间隙状态的化合物（例如III-V族）半导体制成的一维纳米结构。 一维纳米结构包括与阴极电连接的第一端部和位于/远离阴极的第二端部。 一维纳米结构的第二端部用作极化电子发射尖端，并且被配置（即，构造和布置），用于在可选择地对磁场感应和 当向阴极施加预定的负偏压时，圆偏振光束激发。 此外，还提供了包含这种自旋极化电子源的自旋极化扫描隧道显微镜。

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