公开(公告)号：JP4176760B2

公开(公告)日：2008-11-05

申请号：JP2005321388

申请日：2005-11-04

Applicant: 株式会社東芝

Inventor： 尚志 佐久間 ,  博昭 吉田 ,  富男 小野 ,  忠司 酒井 ,  真理子 鈴木

IPC: H01J63/08 ,  H01J1/304

CPC classification number: H01J61/0737 ,  H01J61/0675 ,  H01J2201/308

公开(公告)号：JP2009016252A

公开(公告)日：2009-01-22

申请号：JP2007178510

申请日：2007-07-06

Applicant: National Institute Of Advanced Industrial & Technology ,  独立行政法人産業技術総合研究所

Inventor： TAKEUCHI DAISUKE ,  MAKINO TOSHIHARU ,  YAMAZAKI SATOSHI

IPC: H01J1/304

CPC classification number: H01J1/308 ,  H01J2201/308

Abstract: PROBLEM TO BE SOLVED: To provide an electron source which can operate under room temperature while applying an exciton, without requiring high voltage, operating in low vacuum, with high efficiency and with continuously high output. SOLUTION: The electron source is an indirect transition semiconductor composed of semiconductor material in which exciton binding energy is great, wherein the electron source forms an active layer by the indirect transition semiconductor, with ≥10% generation efficiency for free exciton with an electrode carrying out active layer current injection and converts a free exciton to a free electron in a negative electron affinity force surface formed in an active layer or in an active region to carry out continuous discharging. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供可以在施加激子的同时在室温下操作而不需要高电压，在低真空中以高效率和连续高输出运行的电子源。 解决方案：电子源是由激子结合能大的半导体材料构成的间接跃迁半导体，其中电子源通过间接跃迁半导体形成有源层，对于自由激子​​具有≥10％的发生效率 电极，进行有源层电流注入，并将自由激子转化为在有源层或有源区域中形成的负电子亲和力表面中的自由电子，以进行连续放电。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：WO2006061686A3

公开(公告)日：2006-07-27

申请号：PCT/IB2005003668

申请日：2005-12-05

Applicant: PRINS JOHAN FRANS

Inventor： PRINS JOHAN FRANS

IPC: H01J1/308 ,  H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J9/022 ,  H01J2201/308

Abstract: A method of forming a cathodic device includes the steps of forming a p-type layer (18) and an n-type layer (20) below a surface (20) of a substrate. The material has a conduction band which is at an energy level no more than 0.5 electron-Volts (eV) below the lowest vacuum energy level. The layers are formed so that they are in contact, with the p-type layer located between the surface and the n-type layer, and so that they form a p-n junction. The thickness of the p-type layer is somewhat less than the average distance which an electron injected into the p-type layer travels by diffusion and the thickness of the negatively charged depletion layer in the p-type layer is such that the difference between the thickness of the p-type layer and the thickness of the negatively charged depletion layer in the p-type layer is substantially less than the said average distance.

Abstract translation: 形成阴极器件的方法包括以下步骤：在衬底的表面（20）下方形成p型层（18）和n型层（20）。 该材料具有低于最低真空能级的能级不超过0.5电子伏特（eV）的导带。 这些层被形成为使得它们接触，p型层位于表面和n型层之间，并且使得它们形成p-n结。 p型层的厚度略小于注入到p型层的电子通过扩散行进的平均距离，并且p型层中的带负电荷的耗尽层的厚度使得p型层之间的差异 p型层的厚度和p型层中的带负电荷的耗尽层的厚度基本上小于所述平均距离。

公开(公告)号：WO1997009732A1

公开(公告)日：1997-03-13

申请号：PCT/IB1996000856

申请日：1996-08-26

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  VAN ZUTPHEN, Tom ,  GEHRING, Frederik, Christiaan

IPC: H01J03/40

CPC classification number: H01J29/488 ,  H01J29/04 ,  H01J2201/308

Abstract: Electron-optical device having an electron-emitting region, a longitudinal axis and an arrangement of apertured electron grids along the axis. The first grid has an aperture for passing electrons, which aperture is located further outwards with respect to the longitudinal axis than the emitting region. One of the further grids is provided with a shield so as to shield the edge wall of the aperture, if it is located within direct view of the electron-emitting region, from incidence of positive ions.

Abstract translation: 电子 - 光学器件具有电子发射区域，纵向轴线和沿轴线的多孔电子栅极的布置。 第一栅格具有用于通过电子的孔，该孔比发射区相对于纵轴更向外定位。 其中一个栅格设置有屏蔽件，以便如果它位于电子发射区域的直视图内，则屏蔽孔的边缘壁不会发生阳离子的入射。

公开(公告)号：WO2009008399A1

公开(公告)日：2009-01-15

申请号：PCT/JP2008/062264

申请日：2008-07-07

Applicant: 独立行政法人産業技術総合研究所 ,  竹内 大輔 ,  牧野 俊晴 ,  山崎 聡

Inventor： 竹内 大輔 ,  牧野 俊晴 ,  山崎 聡

IPC: H01J1/308 ,  H01J1/30

CPC classification number: H01J1/308 ,  H01J2201/308

Abstract: 　励起子を応用しながら室温動作する、高電圧不要かつ低真空動作可能な、高効率・連続高出力の電子源を提供する。 電子源は、励起子の束縛エネルギーが高い半導体材料で構成される間接遷移型半導体であって、間接遷移型半導体による活性層（５）を形成し、活性層（５）に電流注入する電極（８）を有し、自由励起子生成効率が１０％以上であり、その活性層（５）あるいは活性領域に形成した負の電子親和力表面（７）で自由励起子を自由電子に変換し連続放出させる。

Abstract translation: 提供了高效率和连续高输出的电子源，其在施加激励器的同时在室温下操作，并且可以在低真空中操作，而不需要任何高电压。 电子源是间接跃迁型半导体，其由具有高结合能的半导体材料制成作为激励器。 电子源包括由间接跃迁型半导体构成的有源层（5）和用于向有源层（5）注入电流的电极（8）。 自由激振器的生产效率为10％以上。 自由激发器在形成在有源层（5）或有源区上的负电子亲和表面（7）上变成自由电子，并且自由电子被连续发射。

公开(公告)号：WO99017325A1

公开(公告)日：1999-04-08

申请号：PCT/IB1998/001274

申请日：1998-08-19

IPC: H01J1/30 ,  H01J29/04 ,  H01J29/48 ,  H01J29/94

CPC classification number: H01J29/94 ,  H01J29/04 ,  H01J29/485 ,  H01J2201/308

Abstract: Cathode ray tube comprising an electron gun which is constructed in such a way that the gas pressure near the electron-emissive layer (30) of the cathode is lower than in the other parts of the tube. This can be achieved by reducing the aperture between the G1 (33) and G2 (36), by providing the G2 (36) with a skirt (43). The wall of the skirt, the G1 and the G2 may also be at least partly coated with a getter (41).

Abstract translation: 阴极射线管包括电子枪，其构造为使阴极的电子发射层（30）附近的气体压力低于管的其它部分中的气体压力。 这可以通过使G2（36）具有裙部（43）来减小G1（33）和G2（36）之间的孔径来实现。 裙部的壁，G1和G2也可以至少部分地涂覆有吸气剂（41）。

公开(公告)号：WO2007073172A3

公开(公告)日：2007-10-18

申请号：PCT/NL2006000655

申请日：2006-12-22

Applicant: TNO ,  GUBBELS GODEFRIDUS HENDRICUS M ,  ZIJP JOHANNES PETRUS

Inventor： GUBBELS GODEFRIDUS HENDRICUS M ,  ZIJP JOHANNES PETRUS

IPC: H01J35/06 ,  H01J1/312 ,  H01J1/316

CPC classification number: H01J1/30 ,  B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2201/30446 ,  H01J2201/308

Abstract: Device for generating X-rays, comprising: -a field emission cathode (10) configured to emit electrons when an electrical field is applied to the cathode (10); and -an anode (20), the anode being configured to generate X-rays as a result of receiving electrons from the field emission cathode (10); wherein the cathode (10) comprises an electron emission surface (S) extending opposite the anode (20), the cathode (10) being configured to emit electrons substantially from the electron emission surface (S) during use.

Abstract translation: 用于产生X射线的装置，包括：场发射阴极（10），配置为当电场施加到阴极（10）时发射电子; 和阳极（20），所述阳极被配置为由于从所述场致发射阴极（10）接收电子而产生X射线; 其中所述阴极（10）包括与所述阳极（20）相对延伸的电子发射表面（S），所述阴极（10）被配置为在使用期间基本上从所述电子发射表面（S）发射电子。

公开(公告)号：WO99045560A1

公开(公告)日：1999-09-10

申请号：PCT/IB1999/000258

申请日：1999-02-15

IPC: H01J3/02 ,  H01J1/308 ,  H01J9/02 ,  H01J9/44 ,  H01J29/04 ,  H01J29/48

CPC classification number: H01J9/02 ,  H01J9/44 ,  H01J29/04 ,  H01J2201/308

Abstract: In an electron tube based on a cold cathode, a cesium source (17) containing Csx-Auy or Csx-Sby is provided near the cold cathode (7), preferably in contact with the first grid (9). Cesium is introduced into the source during activation of the tube. The vapor pressure of the cesium compounds is such that proper delivery of cesium is guaranteed throughout the life-time of the cathode.

Abstract translation: 在基于冷阴极的电子管中，在冷阴极（7）附近提供含有Csx-Auy或Csx-Sby的铯源（17），优选与第一栅极（9）接触。 在管的激活期间将铯引入源中。 铯化合物的蒸气压使得在阴极的整个使用寿命期间保证适当的铯输送。

公开(公告)号：WO2006061686A2

公开(公告)日：2006-06-15

申请号：PCT/IB2005/003668

申请日：2005-12-05

Applicant: PRINS, Johan, Frans

Inventor： PRINS, Johan, Frans

IPC: H01J1/308 ,  H01J1/312 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J9/022 ,  H01J2201/308

Abstract: A method of forming a cathodic device includes the steps of forming a p-type layer and an n-type layer below a surface of a substrate. The material has a conduction band which is at an energy level no more than 0.5 electron-Volts (eV) below the lowest vacuum energy level. The layers are formed so that they are in contact, with the p-type layer located between the surface and the n-type layer, and so that they form a p-n junction. The thickness of the p-type layer is somewhat less than the average distance which an electron injected into the p-type layer travels by diffusion and the thickness of the negatively charged depletion layer in the p-type layer is such that the difference between the thickness of the p-type layer and the thickness of the negatively charged depletion layer in the p-type layer is substantially less than the said average distance.

Abstract translation: 形成阴极器件的方法包括以下步骤：在衬底的表面下方形成p型层和n型层。 该材料具有低于最低真空能级的能级不超过0.5电子伏特（eV）的导带。 这些层被形成为使得它们接触，p型层位于表面和n型层之间，并且使得它们形成p-n结。 p型层的厚度稍微小于注入到p型层的电子通过扩散行进的平均距离，并且p型层中的带负电荷的耗尽层的厚度使得p型层之间的差异 p型层的厚度和p型层中的带负电荷的耗尽层的厚度基本上小于所述平均距离。

公开(公告)号：WO1997009734A1

公开(公告)日：1997-03-13

申请号：PCT/IB1996000871

申请日：1996-08-29

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  GEHRING, Frederik, Christiaan ,  VAN ZUTPHEN, Tom ,  MANENSCHIJN, Albert

IPC: H01J29/46

CPC classification number: H01J29/488 ,  H01J3/029 ,  H01J2201/308

Abstract: Electron-optical device having two elongate emitting regions arranged symmetrically with respect to a longitudinal axis for producing two electron beams having an elongate cross section. By means of electron grids, the two beams are focused at the same point of an electron target arranged transversely to the longitudinal axis and having a short central axis and a long central axis. The elongate emitting regions have their smallest cross section parallel to the scanning direction of a device, cooperating with the electron-optical device, for scanning a target arranged transversely to the longitudinal axis.

Abstract translation: 电子 - 光学器件具有相对于纵向轴线对称布置的两个细长发射区域，用于产生具有细长横截面的两个电子束。 通过电子栅格，两个光束聚焦在横向于纵向轴线布置并具有短的中心轴和长的中心轴的电子靶的相同点上。 细长发射区域具有平行于装置的扫描方向的最小横截面，与电子 - 光学装置配合，用于扫描横向于纵向轴线布置的靶。