Electron emission device and electron emission display using the same
    25.
    发明专利
    Electron emission device and electron emission display using the same 有权
    电子发射装置和使用该电子发射装置的电子发射显示

    公开(公告)号:JP2007227349A

    公开(公告)日:2007-09-06

    申请号:JP2006241491

    申请日:2006-09-06

    Abstract: PROBLEM TO BE SOLVED: To provide an electron emission device and an electron emission display device using the same. SOLUTION: This electron emission device includes a substrate; first electrodes formed on the substrate; electron emission regions electrically connected to the first electrodes; second electrodes placed over the first electrodes such that the second electrodes are insulated from the first electrodes, the second electrodes having openings at the crossed areas with the first electrodes to expose the electron emission regions; and a third electrode placed over the second electrodes such that the third electrode is insulated from the second electrodes, the third electrode having openings communicating with the openings of the second electrodes. Each of the electron emission regions and the second electrodes simultaneously satisfy the following conditions (Condition 1: D2/D1≤0.579, Condition 2: D2≥1 μm). According to this, the color purity of a screen can be enhanced to attain an improved display quality. D1 indicates the width of the openings of the second electrodes, and D2 indicates the width of the electron emission regions. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 解决的问题:提供一种电子发射装置和使用其的电子发射显示装置。 解决方案:该电子发射器件包括衬底; 形成在基板上的第一电极; 电连接到第一电极的电子发射区; 第二电极放置在第一电极上,使得第二电极与第一电极绝缘,第二电极在与第一电极的交叉区域处具有开口以暴露电子发射区域; 以及放置在所述第二电极上的第三电极,使得所述第三电极与所述第二电极绝缘,所述第三电极具有与所述第二电极的开口连通的开口。 电子发射区域和第二电极中的每一个同时满足以下条件(条件1:D2 /D1≤0.579,条件2:D2≥1μm)。 据此,可以提高屏幕的色纯度以获得改善的显示质量。 D1表示第二电极的开口的宽度,D2表示电子发射区域的宽度。 版权所有(C)2007,JPO&INPIT

    냉음극 전자방출원 및 그의 제조방법
    29.
    发明公开
    냉음극 전자방출원 및 그의 제조방법 无效
    冷阴极电子发射源及其制造方法

    公开(公告)号:KR1020100105464A

    公开(公告)日:2010-09-29

    申请号:KR1020100023688

    申请日:2010-03-17

    Abstract: PURPOSE: A cathode electrode emitting source and a manufacturing method thereof are provided to form a minute hole on a gate electrode layer by applying a polymer mask as an etching mask in an etching process. CONSTITUTION: A polymer solution is obtained by dissolving a first polymer and a second polymer. The polymer solution is coated on a second conductive layer(5) for forming a hole. A solvent is selected so that the first polymer has a larger solubility than the second polymer. The first polymer is deposited and fixed in the second polymer by evaporating the solvent as a micro particle. An etching hole is formed on the second polymer by removing the first polymer with the developer. The developer is selected so that the first polymer has larger solubility than the second polymer. A hole is formed on the second conductive layer by performing an etching operation through an etching hole(6).

    Abstract translation: 目的:提供阴极发射源及其制造方法,通过在蚀刻工序中涂布聚合物掩模作为蚀刻掩模,在栅电极层上形成微孔。 构成:通过溶解第一聚合物和第二聚合物获得聚合物溶液。 聚合物溶液涂覆在用于形成孔的第二导电层(5)上。 选择溶剂使得第一聚合物具有比第二聚合物更大的溶解度。 通过蒸发作为微粒子的溶剂将第一聚合物沉积并固定在第二聚合物中。 通过用显影剂除去第一聚合物,在第二聚合物上形成蚀刻孔。 选择显影剂使得第一聚合物具有比第二聚合物更大的溶解度。 通过蚀刻孔(6)进行蚀刻操作,在第二导电层上形成孔。

    전자 소스, X선원 및 그 X선원을 사용한 설비
    30.
    发明授权
    전자 소스, X선원 및 그 X선원을 사용한 설비 有权
    电子源,X射线源和使用X射线源的设备

    公开(公告)号:KR101810349B1

    公开(公告)日:2017-12-18

    申请号:KR1020167010573

    申请日:2015-08-19

    Abstract: 본발명은전자소스와해당전자소스를사용하는 X선원에관한것이다. 본발명의전자소스는적어도두개의전자방출구역을포함하고, 각각의상기전자방출구역은, 복수개의마이크로전자방출유닛을포함하며, 상기마이크로전자방출유닛은, 베이스층, 상기베이스층의상방에위치한절연층, 상기절연층의상방에위치한그리드층, 상기그리드층에위치한개구, 및상기베이스층에고정되여상기개구위치에대응하는전자이미터를포함하며, 동일한상기전자방출구역내의각 상기마이크로전자방출유닛사이는전기적으로연결되어, 동시에전자를방출하거나또는동시에전자를방출하지않으며, 상이한상기전자방출구역사이는전기적으로격리된다.

    Abstract translation: 本发明涉及电子源和使用该电子源的X射线源。 本发明的电子源包括至少两个电子发射区域,每个电子发射区域包括多个微电子发射单元,其中微电子发射单元包括基底层, 位于绝缘层上方的栅格层,位于栅格层中的孔,以及固定至基层以对应于孔径位置的电子发射体,其中每个微电子 发射单元电连接以同时发射电子或不同时发射电子,并且在不同的电子发射区之间电隔离。

Patent Agency Ranking