Production method of gas electron amplification foil

    公开(公告)号:JP5022611B2

    公开(公告)日:2012-09-12

    申请号:JP2006056997

    申请日:2006-03-02

    CPC classification number: H01J3/025 G01T1/18 H01J47/02

    Abstract: To attain objects to reduce the spread of electrons as compared with a conventional one without degrading the multiplication factor of electrons; to provide a large electron multiplication factor; and to improve positional resolution, there is provided a gas electron multiplier using interaction between radiation and gas through photoelectric effects including: a chamber filled with gas and a single gas electron multiplication foil arranged in the chamber wherein the gas electron multiplication foil is made of a plate-like multilayer body composed by having a plate-like insulation layer made of a macromolecular polymer material having a thickness of around 100 μm to 300 μm and flat metal layers overlaid on both surfaces of the insulation layer, and the plate-like multilayer body is provided with a through-hole structure.

    VIRTUAL CATHODE DEPOSITION (VCD) FOR THIN FILM MANUFACTURING
    23.
    发明申请
    VIRTUAL CATHODE DEPOSITION (VCD) FOR THIN FILM MANUFACTURING 审中-公开
    虚拟阴极沉积(VCD)薄膜制造

    公开(公告)号:WO2016042530A1

    公开(公告)日:2016-03-24

    申请号:PCT/IB2015/057205

    申请日:2015-09-18

    Abstract: A virtual cathode deposition apparatus utilises virtual plasma cathode for generation of high density electron beam to ablate a solid target. A high voltage electrical pulse ionizes gas to produce a plasma which temporarily appears in front of the target and serves as the virtual plasma cathode at the vicinity of target. This plasma then disappears allowing the ablated target material in a form of a plasma plume to propagate toward the substrate. Several virtual cathodes operating in parallel provide plumes that merge into a uniform plasma which when condensing on a nearby substrate leads to wide area deposition of a uniform thickness thin film.

    Abstract translation: 虚拟阴极沉积装置利用虚拟等离子体阴极产生高密度电子束以消融固体靶。 高电压电脉冲使气体电离,产生临时出现在靶前方的等离子体,并用作目标附近的虚拟等离子体阴极。 然后该等离子体消失,允许以等离子体羽流形式的烧蚀的靶材料向衬底传播。 并行操作的几个虚拟阴极提供合并成均匀等离子体的羽流,当等离子体在附近的基底上凝结时,导致均匀厚度薄膜的广泛沉积。

    PULSED PLASMA DEPOSITION DEVICE
    24.
    发明申请
    PULSED PLASMA DEPOSITION DEVICE 审中-公开
    脉冲等离子体沉积装置

    公开(公告)号:WO2014097262A1

    公开(公告)日:2014-06-26

    申请号:PCT/IB2013/061223

    申请日:2013-12-20

    Abstract: A pulsed plasma deposition device, comprising an apparatus for generating a beam of electrons (3), a target (4) and a substrate (6), the apparatus (3) being suitable for generating a pulsed beam of electrons directed towards said target (4) to determine the ablation of the material of said target (4) in the form of a plasma plume (19) directed towards said substrate (6); the device comprises a transportation and focussing group (13) of the beam of electrons towards said target (4), arranged between said apparatus (3) and said target (4) and comprising a transportation cone (14), the transportation and focussing group (13) also comprising a focussing electrode (15) directly connected to the transportation cone (14) and shaped substantially like a loop; the axis of symmetry (16) of the focussing electrode (15) is perpendicular, or substantially perpendicular, to the surface of the target (4).

    Abstract translation: 一种脉冲等离子体沉积装置,包括用于产生电子束(3),靶(4)和衬底(6)的装置,所述装置(3)适于产生指向所述目标的脉冲电子束( 4)确定所述靶(4)的材料以等离子体羽流(19)的形式消融,所述等离子体羽流指向所述衬底(6); 该装置包括位于所述设备(3)和所述目标(4)之间并且包括输送锥体(14)的运送和聚焦组(13)的电子束朝向所述目标(4),所述输送和聚焦组 (13)还包括直接连接到输送锥体(14)并且基本上形成环状的聚焦电极(15); 聚焦电极(15)的对称轴(16)垂直于或基本垂直于靶(4)的表面。

    ELECTRON BEAM TREATMENT APPARATUS
    25.
    发明申请
    ELECTRON BEAM TREATMENT APPARATUS 审中-公开
    电子束处理装置

    公开(公告)号:WO2005043599A3

    公开(公告)日:2005-07-14

    申请号:PCT/US2004036406

    申请日:2004-10-29

    CPC classification number: H01J37/317 H01J3/025 H01J37/077

    Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode (122) having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode (126) having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder (130) disposed inside the chamber facing the anode; (e) a source of negative voltage (129) whose output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode (131); (g) a gas inlet (129) adapted to admit gas into the chamber at an introduction rate; and (h) a pump (139) adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

    Abstract translation: 本发明的一个实施例是一种电子束处理装置,包括:(a)室; (b)具有暴露于所述腔室内部的相对较大面积表面的阴极(122); (c)其中具有孔的阳极(126),其设置在所述室内并与所述阴极间隔开工作距离; (d)设置在所述室内面向所述阳极的晶片保持器(130) (e)负电压源(129),其输出被施加到阴极以提供阴极电压; (f)其输出端施加到阳极(131)的电压源; (g)气体入口(129),其适于以引入速率将气体引入所述腔室; 和(h)适于以排气速率从所述室排出气体的泵(139),所述引入速率和排气速率在所述室中提供气体压力; 其中阴极电压,气体压力和工作距离的值使得阴极和阳极之间没有电弧,并且工作距离大于电子平均自由程。

    ELECTRON SOURCE
    26.
    发明申请
    ELECTRON SOURCE 审中-公开
    电子源

    公开(公告)号:WO03049139A9

    公开(公告)日:2003-10-16

    申请号:PCT/FR0204223

    申请日:2002-12-06

    CPC classification number: H01J37/077 H01J3/025 H01J2237/0041

    Abstract: The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D = 1/ beta 2ROOT 2 pi me/mi exp (-1/2), wherein: beta is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.

    Abstract translation: 本发明涉及提供可调节能量电子束的源,包括由具有第一值(S1)的内表面的外壳(1)和具有第二值表面(S1)的提取门(2)组成的等离子体室(P) 值(S2),栅极电位与外壳的电位不同并可调。 本发明的特征在于等离子体被激发并限制在多极或多极磁结构中,第二值(S2)与第一值(S1)的比值接近于:D = 1 /β2ROOT2πme/ mi exp(-1/2)其中:β是等离子体P的电子比例,me是电子质量,mi是带正电的离子的质量。

    KANALFUNKENQUELLE ZUR ERZEUGUNG EINES STABIL GEBÜNDELTEN ELEKTRONENSTRAHLS
    27.
    发明申请
    KANALFUNKENQUELLE ZUR ERZEUGUNG EINES STABIL GEBÜNDELTEN ELEKTRONENSTRAHLS 审中-公开
    信道无线电SOURCE产生稳定的聚焦的电子束

    公开(公告)号:WO2003071577A2

    公开(公告)日:2003-08-28

    申请号:PCT/EP2003/000719

    申请日:2003-01-24

    CPC classification number: H01J3/025 H01J1/025 H05H1/52

    Abstract: Es wird eine über Gasentladung getriggerte Kanalfunkenquelle zur Erzeugung von stabil gebündelten Elektronenstrahlen vorgestellt, die sich durch eine Gaszufuhr mit einer Druckdifferenz von 10 -4 Pascal zwischen der Hohlkathode und dem Kanalausgang auszeichnet, so dass die durch ein äuβeres Magnetfeld unterstützte Ladungsträgervermehrung im Triggerplasma eine Hohlkathodengasentladung zuverlässig zündet und der Strahl ohne Neigung zu Instabilitäten und Berührung bzw. Beschädigung des inneren Kanals das System verlässt.

    Abstract translation: 它提出通过气体排放通道火花源的触发,以产生稳定地捆绑电子束,其特征在于气体供给与10-4帕斯卡的中空阴极和通道输出之间的压力差,使得由一个äubetaeres磁性载体乘法可靠地触发等离子体空心阴极气体放电所支持的 点燃并且不倾向不稳定性和接触或内导管的损伤的光束离开系统。

    VORRICHTUNG ZUM ERZEUGEN EINES ELEKTRONENSTRAHLS
    28.
    发明申请
    VORRICHTUNG ZUM ERZEUGEN EINES ELEKTRONENSTRAHLS 审中-公开
    DEVICE FOR产生电子束

    公开(公告)号:WO2012055458A1

    公开(公告)日:2012-05-03

    申请号:PCT/EP2011/004517

    申请日:2011-09-08

    Abstract: Die Erfindung betrifft eine Vorrichtung zum Erzeugen eines Elektronenstrahls, umfassend ein Gehäuse (12), welches einen evakuierbaren Raum (13) begrenzt und eine Elektronenstrahlaustrittsöffnung aufweist; einen Einlass (16) für das Zuführen eines Arbeitsgases in den evakuierbaren Raum (13); eine flächige Kathode (14) und eine Anode (15), die im evakuierbaren Raum (13) angeordnet sind und zwischen denen mittels einer angelegten elektrischen Spannung ein Glimmentladungsplasma erzeugbar ist, wobei Ionen aus dem Glimmentladungsplasma auf die Oberfläche der Kathode (14) beschleunigbar sind. Die Kathode weist einen aus einem ersten Material bestehenden ersten Teil (14a) auf, der einen zentral angeordneten ersten Oberflächenbereich der Kathode (14) ausbildet, sowie einen aus einem zweiten Material bestehenden zweiten Teil (14b), der einen zweiten Oberflächenbereich der Kathode (14) ausbildet, welcher den ersten Oberflächenbereich umschließt. Das erste Material ist durch das Beaufschlagen mit beschleunigten Ionen auf eine Temperatur erhitzbar, bei der Elektronen überwiegend durch Glühemission aus dem ersten Material heraustreten.

    Abstract translation: 本发明涉及一种设备,用于产生电子束,其包括壳体(12),其限定一真空室(13)和具有电子束出口开口; 用于供给工作气体进入真空室的入口(16)(13); 平面阴极(14)和在可抽空腔室(13)的阳极(15)被布置和在它们之间通过施加的电压,其中,离子从辉光放电等离子体加速了阴极的表面上的装置产生辉光放电等离子体(14) , 阴极具有形成所述阴极(14)的中心设置的第一表面区域上的第一材料的第一部分(14a)的一个电流,以及由第二材料的第二部分中的阴极14的(14B)(第二表面区域的基团 )的形式,其围绕所述第一表面区域。 所述第一材料可通过用加速的离子的应用的温度下加热,通过与电子的第一材料的热离子发射主要出现。

    DEVICE FOR GENERATING PLASMA AND FOR DIRECTING AN FLOW OF ELECTRONS TOWARDS A TARGET
    29.
    发明申请
    DEVICE FOR GENERATING PLASMA AND FOR DIRECTING AN FLOW OF ELECTRONS TOWARDS A TARGET 审中-公开
    用于产生等离子体和用于指导电流流向目标的装置

    公开(公告)号:WO2010109297A2

    公开(公告)日:2010-09-30

    申请号:PCT/IB2010/000644

    申请日:2010-03-23

    CPC classification number: H01J3/025

    Abstract: Device (1) for generating plasma and for directing an flow of electrons towards a specific target (3); the device (1) comprises a hollow cathode (5); a main electrode (7) at least partially placed inside the cathode (5); a resistor (12), electrically earthing the main electrode (7); a substantially dielectric tubular element (21) extending through a wall (22) of the cathode; a ring-shaped anode (25) placed around the tubular element (21) and earthed; and an activation group (11) which is electrically connected to the cathode (5) and is able to reduce the electric potential of the cathode (5) of at least 8 kV in about 10 ns.

    Abstract translation: 用于产生等离子体并用于将电子流引向特定目标(3)的装置(1); 所述装置(1)包括空心阴极(5); 至少部分地放置在阴极(5)内的主电极(7); 电连接所述主电极(7)的电阻器(12)。 延伸穿过阴极的壁(22)的基本介电管状元件(21); 围绕所述管状元件(21)放置并接地的环形阳极(25); 以及电连接到阴极(5)并且能够在约10ns内将阴极(5)的电位降低至少8kV的激活组(11)。

    ガス電子増幅器およびそれに用いるガス電子増幅フォイルの製造方法ならびにガス電子増幅器を使用した放射線検出器
    30.
    发明申请
    ガス電子増幅器およびそれに用いるガス電子増幅フォイルの製造方法ならびにガス電子増幅器を使用した放射線検出器 审中-公开
    气体电子放大器及其制造气体放大电磁放大器的方法及使用气体放大器的辐射探测器

    公开(公告)号:WO2007100029A1

    公开(公告)日:2007-09-07

    申请号:PCT/JP2007/053875

    申请日:2007-03-01

    CPC classification number: H01J3/025 G01T1/18 H01J47/02

    Abstract: A gas electronic amplifier employing interaction by photoelectric effect of radiation and gas in which spread of electrons can be reduced as compared with before without lowering the amplification factor of electrons, and positional resolution is enhanced while a high electron amplification factor is provided. The gas electronic amplifier comprises a chamber (102) filled with gas, and a single gas electron amplification foil (12) arranged in the chamber, wherein the gas electron amplification foil is composed of a planar multilayer body having a planar insulation layer (12a) of a high molecular polymer material about 100-300 µm in thickness, and planar metal layers (12b, 12c) covering the opposite sides of the insulation layer, and a through hole structure is provided in the planar multilayer body.

    Abstract translation: 一种采用放射线和气体的光电效应的相互作用的气体电子放大器,其中与之前相比可以减少电子的扩散,而不降低电子的放大系数,并且提供高的电子放大系数的位置分辨率。 气体电子放大器包括填充有气体的室(102)和布置在室中的单个气体电子放大箔(12),其中气体电子放大箔由具有平面绝缘层(12a)的平面多层体构成, 的厚度为约100-300μm的高分子聚合物材料,以及覆盖绝缘层相对两侧的平面金属层(12b,12c)和通孔结构。

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