Abstract:
A deflection apparatus for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, has a magnetic structure formed of laminations (72) with thickness in range between 0.2 and 1 millimeter. A compensator with similar laminated structures (71, 75) with resonant excitation circuit, operating at 20 Hz or higher, is in phase locked relationship with the frequency of the previously deflected beam. Other features with broader applicability to produce strong magnetic field in magnetic gap are shown.
Abstract:
A deflection apparatus for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, has a magnetic structure formed of laminations (72) with thickness in range between 0.2 and 1 millimeter. A compensator with similar laminated structures (71, 75) with resonant excitation circuit, operating at 20 Hz or higher, is in phase locked relationship with the frequency of the previously deflected beam. Other features with broader applicability to produce strong magnetic field in magnetic gap are shown.
Abstract:
System for irradiating the surface of a substrate with atomic or molecular ions by rapid scanning of a beam in two dimensions over the surface of the substrate. A scanning system is shown for deflecting the beam in two dimensions relative to a reference axis and a magnetic ion beam transport system following the scanning system is arranged to receive the beam from the scanning system over the range of two dimensional deflections of the scanning system and constructed to impose magnetic field conditions along the beam path of characteristics selected to reorient the two-dimensionally deflected beam to a direction having a predetermined desired relationship with the axis in the two dimensions at the desired instantaneous two dimensional displacement of the beam from the axis, to produce the desired scan of the beam over the substrate. One scanning system includes sequential first and second time-variable-field magnetic scanners, the first scanner having a magnetic gap of volume smaller than that of the second scanner and constructed to scan the beam more rapidly than the second scanner. In another system, the scanners are superposed. The magnetic ion beam transport system presently preferred is a system producing a sequence of three or more quadrupole fields, implemented by a sequence of quadrupoles. Alternate structures are disclosed. The system is capable of depositing atomic or molecular ions with a desired angular and positional uniformity over a wide range of perveance including perveance above 0.02/M[amu] 1/2 (mA/keV 3/2 ) with a constant, adjustable spot size and small beam spread.
Abstract:
PROBLEM TO BE SOLVED: To provide the heavy ion implanting instrument of both a continuous hybrid type and a batch type using a magnetic scan system operated at a frequency from 20Hz to 300Hz condition. SOLUTION: A deflection apparatus for a high perveance ion beam, which works at a basic frequency of 20Hz or an order harmonic wave having a frequency higher than the basic frequency, and which has a magnetic structure formed by a stacked layer (72) having a thickness from 0.2 to 1mm. A compensator comprising a similar stacked layer structure having a resonance excitation circuit, which works at a frequency not less than 20 Hz, and which has a phase closure relation with a preliminary deflected beam frequency. A wide range of application for generating a strong magnetic field in a magnetic space is disclosed with another characteristics. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
기판의 표면위에서 2차원으로 비임의 급속한 주사에의해 전자 또는 분자 이온으로 기판의 표면에 빛을 비추기 위한 장치에 관한 것이다. 주사장치는 참고 축선에 대하여 2차원으로 비임을 굽히기 위한 것이며, 주사장치의 다음에 있는 마그네틱 이온 비임 이송장치는 주사장치의 2차원 만곡의 범위를 너머 주사장치로 부터 이온 비임을 받도록 배치되며, 축선으로부터 비임의 소정의 순간적인 2차원 변위에 2차원으로 축선과 미리 결정된 소정의 관계를 가진 방향으로 2차원적으로 만곡된 비임을 새로 발생시키기 위해 선택된 특성의 비임경로를 따라 자기장 상태를 부여하도록 구성되어 기판위에서 비임의 소정의 주사를 행한다. 하나의 주사장치는 연속된 제1 및 제2 시변수장 마그네틱 수캐너를 가지고 있으며, 상기 제1 스캐너는 제2 스캐너 보다 더 빨리 이온비임을 주사하도록 구성되며, 제2스캐너의 매크네틱 깊보다 더 작은 볼륨의 마그네틱 깊을 가지고 있다. 다른 장치에서 스캐너는 겹쳐진다. 바람직한 마그네틱 이온 비임 이송장치는 일련의 4중극에의해 제공된 일련의 셋 또는 1이상의 4중극장을 만드는 장치이다. 변경된 구조가 개시되어 있다. 상기 장치는 일정하고 조정할 수 있는 스포트 크기 및 작은 비임 퍼짐으로 0.02/M [amu]1/2 (mA/keV3/2) 이상의 퍼비언스를 포함하는 넓은 범위의 퍼비언스에 결쳐 소정의 각도 및 위치적인 균일성을 가진 전자 또는 분자 이온을 놓을수 있도록 한다.