System and method for generating a right torsion field
    21.
    发明申请
    System and method for generating a right torsion field 失效
    用于产生正确扭转场的系统和方法

    公开(公告)号:US20020074507A1

    公开(公告)日:2002-06-20

    申请号:US09992918

    申请日:2001-11-16

    CPC classification number: H05K9/00

    Abstract: A device for generating a right torsion field having an outer body, a salt solution, and a ring. The ring generates a first right torsion field. The ring and the salt solution are disposed within the outer body such that a portion of the first right torsion field propagates through the salt solution.

    Abstract translation: 一种用于产生具有外体,盐溶液和环的右扭转场的装置。 环产生第一个右扭转场。 环和盐溶液设置在外体内,使得第一右扭转场的一部分传播通过盐溶液。

    Control system for indirectly heated cathode ion source
    22.
    发明申请
    Control system for indirectly heated cathode ion source 有权
    间接加热阴极离子源控制系统

    公开(公告)号:US20010042836A1

    公开(公告)日:2001-11-22

    申请号:US09825901

    申请日:2001-04-04

    CPC classification number: H01J27/022 H01J27/08

    Abstract: An indirectly heated cathode ion source includes an extraction current sensor for sensing ion current extracted from the arc chamber and an ion source controller for controlling the filament power supply, the bias power supply and/or the arc power supply. The ion source controller may compare the sensed extraction current with a reference extraction current and determine an error value based on the difference between the sensed extraction current and the reference extraction current. The power supplies of the indirectly heated cathode ion source are controlled to minimize the error value, thus maintaining a substantially constant extraction current. The ion source controller utilizes a control algorithm, for example a closed feedback loop, to control the power supplies in response to the error value. In a first control algorithm, the bias current IB supplied by the bias power supply is varied so as to control the extraction current IE. Further according to the first control algorithm, the filament current IF and the arc voltage VA are maintained constant. According to a second control algorithm, the filament current IF is varied so as to control the extraction current IE. Further according to the second control algorithm, the bias current IB and the arc voltage VA are maintained constant.

    Abstract translation: 间接加热的阴极离子源包括用于感测从电弧室提取的离子电流的提取电流传感器和用于控制灯丝电源,偏置电源和/或电弧电源的离子源控制器。 离子源控制器可以将感测的提取电流与参考提取电流进行比较,并且基于感测的提取电流与参考提取电流之间的差来确定误差值。 控制间接加热的阴极离子源的电源以使误差值最小化,从而保持基本上恒定的提取电流。 离子源控制器利用控制算法,例如闭合反馈环路,以响应误差值来控制电源。 在第一控制算法中,改变由偏置电源提供的偏置电流IB,以便控制提取电流IE。 此外,根据第一控制算法,灯丝电流IF和电弧电压VA保持恒定。 根据第二控制算法,改变灯丝电流IF,以控制提取电流IE。 此外,根据第二控制算法,偏置电流IB和电弧电压VA保持恒定。

    Devices incorporating soft ionization membrane
    23.
    发明申请
    Devices incorporating soft ionization membrane 失效
    软电离膜装置

    公开(公告)号:US20040222382A1

    公开(公告)日:2004-11-11

    申请号:US10786229

    申请日:2004-02-26

    Applicant: Ionfinity LLC

    Inventor: Frank T. Hartley

    Abstract: Devices are disclosed that incorporate an ionization device for generating ions and electrons having first and second conductive electrodes that are separated by less than the mean-free-path of molecules being ionized. Electrons generated by the ionization device may be used for applications such as light sources, electron bombardment sensors, thyratrons, vacuum tubes, plasma displays, and microwave switches, and ions generated by the ionization device may be used, inter alia, in connection with ion focused milling devices, maskless ion implantation devices, ion beam lithography devices, semiconductor mask modification devices, and semiconductor chip wiring devices. Methods of use and manufacture are also provided.

    Abstract translation: 公开了包括用于产生离子的电离装置的装置,该离子和电子具有通过小于被离子化的分子的平均自由路径分开的第一和第二导电电极。 由电离装置产生的电子可用于诸如光源,电子轰击传感器,闸流管,真空管,等离子体显示器和微波开关等应用,并且离子化装置产生的离子尤其可以用于离子 聚焦铣削装置,无掩模离子注入装置,离子束光刻装置,半导体掩模修改装置和半导体芯片布线装置。 还提供了使用和制造方法。

    Method of predicting a lifetime of filament in ion source and ion source device
    24.
    发明申请
    Method of predicting a lifetime of filament in ion source and ion source device 失效
    在离子源和离子源装置中预测长丝寿命的方法

    公开(公告)号:US20040149927A1

    公开(公告)日:2004-08-05

    申请号:US10712344

    申请日:2003-11-14

    Inventor: Koji Iwasawa

    CPC classification number: H01J27/022 H01J37/08 H01J37/242

    Abstract: An ion source device includes an ion source having a filament for emitting thermoelectrons, a current measuring device for measuring current flowing through the filament, a voltage measuring device for measuring voltage across the filament, a resistance operation device for computing a resistance value of the filament by using the current and the voltage measured by the current and voltage measuring devices, and a prediction operation device for computing a time till the application limits of the filament or a time left till the application limits of the filament.

    Abstract translation: 离子源装置包括具有用于发射热电子的灯丝的离子源,用于测量流过灯丝的电流的电流测量装置,用于测量灯丝两端的电压的电压测量装置,用于计算灯丝电阻值的电阻操作装置 通过使用由电流和电压测量装置测量的电流和电压,以及用于计算直到灯丝的施加极限或剩余时间直到灯丝的施加极限的时间的预测操作装置。

    System for and method of gas cluster ion beam processing
    25.
    发明申请
    System for and method of gas cluster ion beam processing 有权
    气体簇离子束处理系统及方法

    公开(公告)号:US20040113093A1

    公开(公告)日:2004-06-17

    申请号:US10667006

    申请日:2003-09-19

    Inventor: Michael E. Mack

    Abstract: System and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components. Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB. The larger currents transport greater quantities of gas in the GCIB. A vented faraday cup beam measurement system maintains beam dosimetry accuracy despite the high gas transport load.

    Abstract translation: 通过结合改进的梁和工件中和组件实现气体簇离子束处理的系统和方法。 通过GCIB的空间电荷的低能量电子中和来实现更大的GCIB电流传输。 较大的电流在GCIB中运送更多的气体。 排气法拉第杯梁测量系统保持射束剂量测定精度,尽管气体输送负荷较高。

    Electron diffraction system for use in production environment and for high pressure deposition techniques
    26.
    发明申请
    Electron diffraction system for use in production environment and for high pressure deposition techniques 有权
    用于生产环境和高压沉积技术的电子衍射系统

    公开(公告)号:US20040065844A1

    公开(公告)日:2004-04-08

    申请号:US10664718

    申请日:2003-09-17

    Inventor: Philippe Staib

    CPC classification number: H01J37/295

    Abstract: An electron source particularly for a RHEED measurement system or a RHEED measurement system as such includes an electron emitter (5), a first deflection stage (6a, b) for radiating an electron beam onto a sample (1), and a second deflection stage between the first stage (6a, b) and the sample 1, preferably near the sample.

    Abstract translation: 特别是用于RHEED测量系统或RHEED测量系统的电子源包括电子发射器(5),用于将电子束辐射到样品(1)上的第一偏转台(6a,b)和第二偏转级 在第一阶段(6a,b)和样品1之间,优选在样品附近。

    Indirectly heated button cathode for an ion source
    27.
    发明申请
    Indirectly heated button cathode for an ion source 有权
    用于离子源的间接加热按钮阴极

    公开(公告)号:US20040061068A1

    公开(公告)日:2004-04-01

    申请号:US10259827

    申请日:2002-09-30

    Abstract: An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly Pnullnullnull for subsequent acceleration for high energy implantation.

    Abstract translation: 用于离子注入机的离子源的间接加热纽扣阴极具有由安装在轴环件中的塞片形成的纽扣件。 芯块与套环件绝热,使其能够在更高的温度下工作,从而使电子发射增强并集中在芯块的表面上。 lug lug piece piece piece。。。。。。。。。。 替代地,块塞可以是钽以提供较低的热离子功能。 在离子源中产生的浓缩等离子体有效地增强高电荷状态离子的产生,特别是用于高能量注入的后续加速的P +++。

    Electron-cyclotron resonance type ion beam source for ion implanter
    28.
    发明申请
    Electron-cyclotron resonance type ion beam source for ion implanter 失效
    用于离子注入机的电子 - 回旋共振型离子束源

    公开(公告)号:US20030234369A1

    公开(公告)日:2003-12-25

    申请号:US10032425

    申请日:2001-12-31

    Inventor: Yuri Glukhoy

    CPC classification number: H01J27/18 H01J37/08 H01J2237/0817 H01J2237/31701

    Abstract: An ECR ion-beam source for use in an ion implanter has a sealed plasma chamber in which plasma is excited by microwave radiation of 2.45 GHz in combination with an external magnetic field generated by permanent magnets surrounding the plasma chamber. The magnets cause electron-cyclotron resonance for the electrons of the plasma thus creating conditions for efficient absorption of the microwave energy. The same magnets generate a magnetic field, which compresses the plasma toward the center for confining the plasma within the plasma chamber. The ion source also has an RF pumping unit that pumps into the plasma the RF energy. The RF pumping unit has a unique additional function of RF magnetron sputtering of solid targets converted into a gaseous working medium used for implantation in an ionized form. For obtaining elongated belt-type ion beams (having a width of 1 m or longer), the ion source may contain a microwave pumping system having several output windows arranged in series along the axis of the plasma chamber and on diametrically opposite sides thereof. The windows are continuously cleaned from the contaminants that might precipitate onto their surfaces. A standard-type sand blaster can be used for cleaning of the windows.

    Abstract translation: 用于离子注入机的ECR离子束源具有密封的等离子体室,其中等离子体由2.45GHz的微波辐射与由围绕等离子体室的永磁体产生的外部磁场相结合而激发。 这些磁体对于等离子体的电子产生电子回旋共振,从而产生有效吸收微波能量的条件。 相同的磁体产生磁场,其将等离子体压向中心,以将等离子体限制在等离子体室内。 离子源还具有RF抽运单元,其将等离子体泵送到RF能量。 射频泵送单元具有独特的附加功能,即将固体靶的RF磁控溅射转换成用于以离子化形式植入的气态工作介质。 为了获得细长的带式离子束(宽度为1μm或更长),离子源可以包含具有多个输出窗口的微波泵送系统,该输出窗口沿着等离子体室的轴线和其直径相对的侧面串联布置。 这些窗户可以从可能沉淀在其表面上的污染物中持续清洁。 标准型喷砂机可用于清洁窗户。

    Apparatus and a method for forming a pattern using a crystal structure of material
    29.
    发明申请
    Apparatus and a method for forming a pattern using a crystal structure of material 有权
    使用材料的晶体结构形成图案的装置和方法

    公开(公告)号:US20030155523A1

    公开(公告)日:2003-08-21

    申请号:US10220364

    申请日:2002-08-29

    Inventor: Ki-Bum Kim

    Abstract: The present invention relates generally to an apparatus and a method for forming a pattern, and in particular, to an apparatus and a method for forming a pattern for the formation of quantum dots or wires with 1null50 nm dimension using the atomic array of a crystalline material and to the manufacture of functional devices that have such a structure. In the present invention, the functional device means an electronic, magnetic, or optical device that can be fabricated by procedures including the formation process of quantum dots or wires.

    Abstract translation: 本发明一般涉及一种用于形成图案的装置和方法,特别涉及一种用于形成用于形成具有1〜50nm尺寸的量子点或线的图案的装置和方法,其使用原子阵列 晶体材料和具有这种结构的功能器件的制造。 在本发明中,功能器件是指可以通过包括量子点或线的形成过程的工艺制造的电子,磁性或光学器件。

    Point source for producing electrons beams
    30.
    发明申请
    Point source for producing electrons beams 失效
    产生电子束的点源

    公开(公告)号:US20030127594A1

    公开(公告)日:2003-07-10

    申请号:US10042795

    申请日:2002-01-09

    Abstract: An apparatus for producing an electron beam, containing a vacuum chamber, a source of electron beams within the vacuum chamber, and a device for focusing the electrons beams. An electron transparent window is formed at the end of the vacuum chamber; and the vacuum chamber has a volume of less than about 1 cubic millimeter and a pressure of less than 10null7 Torr. In one embodiment, the focusing device is located outside of the vacuum chamber.

    Abstract translation: 一种用于制造电子束的装置,包括真空室,真空室内的电子束源和用于聚焦电子束的装置。 在真空室的末端形成电子透明窗; 真空室的体积小于约1立方毫米,压力小于10-7乇。 在一个实施例中,聚焦装置位于真空室外部。

Patent Agency Ranking