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    Capacitive MEMS device with programmable offset voltage control
    294.
    发明公开
    Capacitive MEMS device with programmable offset voltage control 审中-公开
    Kapazitive MEMS-Vorrichtung mit programmierbarer Offsetspannungssteuerung

    公开(公告)号：EP2058276A2

    公开(公告)日：2009-05-13

    申请号：EP08153688.0

    申请日：2008-03-31

    Applicant: QUALCOMM MEMS Technologies, Inc.

    Inventor： Felnhofer, Daniel ,  Gousev, Evgeni

    IPC: B81B3/00

    CPC classification number: B81B3/0086 ,  B81B2201/045 ,  G02B26/001 ,  G11C23/00

    Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.

    Abstract translation: 电容MEMS器件形成为具有陷阱并保持电荷的电极之间的材料。 该材料可以在几种配置中实现。 它可以是具有不同带隙能量或带能级的区域的多层介质叠层。 介电材料本身可以是歪斜的，即当在材料中预先制造缺陷或捕获位置时。 另一种结构涉及导电材料的薄层，其中电介质层的禁止间隙具有能级。 可以通过有利地使用材料中的电荷存储的方法来对器件进行编程（即，偏移和阈值电压预设），其中干涉式调制器以滞后曲线移动的方式被预充电，并且致动电压 调制器的阈值显着降低。 在编程阶段期间，电极和材料之间的电荷转移可以通过向电极施加电压（即跨过材料施加电场）或通过UV照射和在能量屏障上注入电荷来执行。 然后干涉式调制器可以以显着较低的致动电压保持在致动状态，从而节省功率。

    Micromirror device with a hybrid parallel plate and comb drive actuator
    295.
    发明公开
    Micromirror device with a hybrid parallel plate and comb drive actuator 审中-公开
    Mikrospiegelvorrichtung mit hybridem Parallelplatten und Kammelektroden Aktuator

    公开(公告)号：EP1927873A1

    公开(公告)日：2008-06-04

    申请号：EP07254587.4

    申请日：2007-11-26

    Applicant: JDS Uniphase Corporation

    Inventor： Moidu, Abdul Jaleel K.

    IPC: G02B6/35 ,  G02B26/08 ,  B81B3/00

    CPC classification number: G02B26/0841 ,  B81B3/0062 ,  B81B2201/033 ,  B81B2201/045 ,  B81B2203/058

    Abstract: A hybrid electro-static actuator for rotating a two-dimensional micro-electromechanical micro-mirror device about two perpendicular axes includes a vertical comb drive for rotating the micro-mirror about a tilt axis, and a parallel plate drive for rotating the micro-mirror about a roll axis. The rotor comb fingers of the comb drive extend from a sub-frame of the micro-mirror, which is only rotatable about the tilt axis, while one of the parallel plate electrodes is mounted on the underside of a main platform, which generally surrounds the sub-frame. The vertical comb drive rotates both the sub-frame and the main platform about the tilt axis, while the parallel plate drive only rotates the main platform about the roll axis.

    Abstract translation: 用于围绕两个垂直轴旋转二维微机电微镜装置的混合静电致动器包括用于围绕倾斜轴旋转微镜的垂直梳齿驱动器和用于旋转微镜的平行板驱动器 关于辊轴。 梳子驱动器的转子梳齿从微镜的子框架延伸，微镜的子框架仅可围绕倾斜轴线旋转，而平行板电极中的一个安装在主平台的下侧，主平台大致围绕 子帧。 垂直梳齿驱动器使副框架和主平台围绕倾斜轴线旋转，而平行板驱动器仅使主平台围绕辊轴线旋转。

    CONDUCTIVE ETCH STOP FOR ETCHING A SACRIFICIAL LAYER
    298.
    发明公开
    CONDUCTIVE ETCH STOP FOR ETCHING A SACRIFICIAL LAYER 审中-公开
    CONDUCTING蚀刻掩模用于蚀刻的受害者LAYER

    公开(公告)号：EP1532658A1

    公开(公告)日：2005-05-25

    申请号：EP03734278.9

    申请日：2003-05-30

    Applicant: Silicon Light Machines Corporation

    Inventor： HUNTER, James, A.

    IPC: H01L21/00 ,  H01L27/14 ,  H01L29/82 ,  H01L29/84

    CPC classification number: G02B26/0833 ,  B81B2201/045 ,  B81C1/00531 ,  B81C2201/0132 ,  G02B26/0841

    Abstract: In one embodiment, a micro device is formed by depositing a sacrificial layer over a metallic electrode (step 304), forming a moveable structure over the sacrificial layer (step 306), and then etching the sacrificial layer with a noble gas fluoride (step 308). Because the metallic electrode is comprised of a metallic material that also serves as an etch stop in the sacrificial layer etch, charge does not appreciably build up in the metallic electrode. This helps stabilize the driving characteristic of the moveable structure. In one embodiment, the moveable structure is a ribbon in a light modulator.

    MICROMACHINE AND METHOD OF MANUFACTURING THE SAME
    299.
    发明公开
    MICROMACHINE AND METHOD OF MANUFACTURING THE SAME 有权
    微器件及其制造方法

    公开(公告)号：EP1041036A4

    公开(公告)日：2005-03-09

    申请号：EP99947884

    申请日：1999-10-13

    Applicant: SEIKO EPSON CORP

    Inventor： KAMIJIMA SHUNJI ,  YONEKUBO MASATOSHI ,  TAKEDA TAKASHI ,  NISHIKAWA TAKAO

    IPC: B81B3/00 ,  B81C1/00 ,  G02B26/02 ,  B81B1/00

    CPC classification number: B81C1/00182 ,  B81B2201/045 ,  B81C2201/034 ,  G02B26/02

    Abstract: A micromachine and a method of manufacturing the same which are suitable as or for a micromachine having a first dynamic fine structural portion constituting a driving portion, and a second static fine structural portion performing a switching function or a function of an optical element, the method comprising forming the second static fine structural portion on the first dynamic fine structural portion, or superposing the second static fine structural portion thereon and die transferring the same thereto, whereby the method enables the second fine structure to be formed without using at least a complicated step, such as a silicon process in an intermediate stage of the method, and into a complicated shape easily with a high reproducibility, and contributes to the improvement of the productivity. Especially, when a plurality of elements are arranged in an arrayed state as in a spatial light modulator, the die transfer techniques enable the second fine structure to be reproduced stably as compared with the techniques using a silicon process for forming all parts of a micromachine, whereby the subject method reduces the probability of occurrence of defects to a remarkably low level and contributes to the improvement of the yield.

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