公开(公告)号：KR1020070009281A

公开(公告)日：2007-01-18

申请号：KR1020050064421

申请日：2005-07-15

Applicant: 삼성전자주식회사

Inventor： 박금식

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/2002 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/204 ,  H01J2237/31701

Abstract: An ion implanting apparatus is provided to avoid a cross contamination phenomenon by including a plurality of dummy wafer cassettes so that a dummy wafer is individually stored according to doping ions to be used in an ion implantation process. An ion implanting apparatus(100) implants specific ions into a plurality of wafers including a dummy wafer. The dummy wafer is individually used according to specific ions. The used dummy wafer is individually stored in a plurality of dummy wafer cassettes(142). The plurality of wafers are mounted on a disc(111) including a plurality of susceptors(112). A motor supplies driving force for rotating the disc, associating with the disc.

Abstract translation: 提供离子注入装置，以通过包括多个虚拟晶片盒来避免交叉污染现象，使得根据待离子注入工艺中使用的掺杂离子单独存储虚设晶片。 离子注入装置（100）将特定离子注入到包括虚拟晶片的多个晶片中。 根据特定离子单独使用虚拟晶片。 所使用的虚设晶片分别存储在多个虚拟晶片盒（142）中。 多个晶片安装在包括多个基座（112）的盘（111）上。 马达提供用于旋转盘的驱动力，与盘相关联。

公开(公告)号：US20240178022A1

公开(公告)日：2024-05-30

申请号：US18071400

申请日：2022-11-29

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Ofer Dudovitch

IPC: H01L21/67 ,  B65G47/90 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67253 ,  B65G47/90 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01L21/67766 ,  H01L21/68707 ,  H01J2237/201 ,  H01J2237/20278 ,  H01J2237/24578 ,  H01J2237/31749

Abstract: A method of operating a substrate processing system that includes a substrate processing chamber, a substrate storage container and robot configured to select a substrate from the substrate storage container and transfer a selected substrate into the substrate processing chamber, the method comprising: detecting a lower edge and upper edge of the substrate; calculating a thickness of the substrate based on the detected lower and upper edges of the substrate; comparing the calculated thickness of the substrate to an expected thickness of the substrate; and (i) if the calculated thickness matches the expected thickness, controlling the robot to transfer the substrate into the substrate processing chamber, (ii) if the calculated thickness does not match the expected thickness, generating an alert indicating a thickness mismatch.

公开(公告)号：US11996266B2

公开(公告)日：2024-05-28

申请号：US17093139

申请日：2020-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Anthony Renau ,  Joseph C. Olson ,  Peter F. Kurunczi

IPC: H01J37/20 ,  H01J37/304

CPC classification number: H01J37/304 ,  H01J37/20 ,  H01J2237/201

Abstract: A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.

公开(公告)号：US20230402256A1

公开(公告)日：2023-12-14

申请号：US18317353

申请日：2023-05-15

Applicant: Tokyo Electron Limited

Inventor： Takashi CHIBA ,  Jun SATO ,  Takeshi KOBAYASHI

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/458 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36

CPC classification number: H01J37/32146 ,  H01J37/3211 ,  C23C16/505 ,  C23C16/45536 ,  C23C16/4584 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  H01J2237/332 ,  H01J2237/20214 ,  H01J2237/201

Abstract: With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.

公开(公告)号：US20230395358A1

公开(公告)日：2023-12-07

申请号：US18147775

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoong Heo

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32715 ,  B08B7/0035 ,  H01J2237/201 ,  H01J2237/335 ,  H01J2237/20214 ,  H01J2237/20278 ,  H01J2237/2007

Abstract: A semiconductor substrate processing apparatus includes a chamber dimensioned to accommodate a plurality of strip magazines, each strip magazine configured to receive a plurality of substrates therein, a plasma generator coupled to the chamber and configured to generate plasma used to remove foreign substances on the substrates in the chamber, and a rotation support mechanism configured to rotate the plurality of strip magazines within the chamber. Each of the strip magazines includes first and second side wall plates, an upper plate and a lower plate, and a plurality of guides on inner sides of the first and second side wall plates to support the substrates. The rotation support mechanism includes: a shaft, a motor configured to rotate the shaft, and a plurality of support frames fixed to side surfaces of the shaft and configured to fixedly support the strip magazines.

公开(公告)号：US11837444B2

公开(公告)日：2023-12-05

申请号：US16347590

申请日：2017-11-06

Applicant: BONDTECH CO., LTD. ,  Tadatomo Suga

Inventor： Akira Yamauchi ,  Tadatomo Suga

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J2237/201 ,  H01J2237/338 ,  H01J2237/3341

Abstract: The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

公开(公告)号：US20230215754A1

公开(公告)日：2023-07-06

申请号：US17996524

申请日：2021-04-14

Applicant: Tokyo Electron Limited

Inventor： Satoru KAWAKAMI ,  Nobuo MATSUKI

IPC: H01L21/677 ,  H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455 ,  C23C16/54 ,  C23C16/458

CPC classification number: H01L21/67754 ,  H01J37/32733 ,  H01L21/67161 ,  H01L21/6719 ,  C23C16/50 ,  C23C16/45565 ,  C23C16/54 ,  C23C16/4583 ,  H01J2237/201 ,  H01J2237/20235 ,  H01J2237/20214 ,  H01J2237/3321 ,  H01L21/68707

Abstract: A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

公开(公告)号：US20230142778A1

公开(公告)日：2023-05-11

申请号：US17981779

申请日：2022-11-07

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Kin Pong Lo ,  Peter J. Lembesis

IPC: H01J37/32

CPC classification number: H01J37/32807 ,  H01J37/32642 ,  H01J2237/024 ,  H01J37/32899 ,  H01J2237/201 ,  H01L21/673

Abstract: A cassette for a workpiece processing system is provided. The cassette is configured to hold one or more replaceable parts, one or more workpieces and one or more pedestal protectors. The cassette includes a divider configured to separate the one or more replacement parts from the one or more workpieces and/or one or more pedestal protectors. The cassette is configured to be disposed in a storage chamber of a workpiece processing apparatus to facilitate automated replacement of replacement parts in one or more processing chambers. Workpiece processing systems and methods of replacing replacement parts in a workpiece processing system are also provided.

公开(公告)号：US09927327B2

公开(公告)日：2018-03-27

申请号：US15005431

申请日：2016-01-25

Applicant: President and Fellows of Harvard College

Inventor： Kenneth Jeffrey Hayworth ,  Amy Au Hayworth

IPC: G01N1/06 ,  G01N1/28 ,  G01N1/36 ,  G01N1/31

CPC classification number: G01N1/06 ,  G01N1/286 ,  G01N1/312 ,  G01N2001/066 ,  G01N2001/362 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/26 ,  Y10T156/1052 ,  Y10T156/1056 ,  Y10T156/1057 ,  Y10T156/1059 ,  Y10T156/1062 ,  Y10T156/12 ,  Y10T156/1322 ,  Y10T156/1712

Abstract: Methods, apparatus and systems for collecting thin tissue samples for imaging. Thin tissue sections may be cut from tissue samples using a microtome-quality knife. In one example, tissue samples are mounted to a substrate that is rotated such that thin tissue sections are acquired via lathing. Collection of thin tissue sections may be facilitated by a conveyor belt. Thin tissue sections may be mounted to a thin substrate (e.g., by adhering thin tissue sections to a thin substrate via a roller mechanism) that may be imaged, for example, by an electron beam (e.g., in an electron microscope). Thin tissue sections may be strengthened before cutting via a blockface thinfilm deposition technique and/or a blockface taping technique. An automated reel-to-reel imaging technique may be employed for collected/mounted tissue sections to facilitate random-access imaging of tissue sections and maintaining a comprehensive library including a large volume of samples.

公开(公告)号：US20170345964A1

公开(公告)日：2017-11-30

申请号：US15681936

申请日：2017-08-21

Applicant: Intevac, Inc.

Inventor： Babak Adibi ,  Moon Chun

IPC: H01L31/18 ,  C23C14/48 ,  H01L21/223 ,  H01J37/317 ,  H01J37/32 ,  H01L31/068 ,  C23C14/04 ,  H01J37/18

CPC classification number: H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.