公开(公告)号：US5742121A

公开(公告)日：1998-04-21

申请号：US658296

申请日：1996-06-05

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A thin-film edge field emitter device includes a substrate having a first rtion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

公开(公告)号：US5712534A

公开(公告)日：1998-01-27

申请号：US688098

申请日：1996-07-29

Applicant: John Kichul Lee ,  David A. Cathey, Jr. ,  Kevin Tjaden

Inventor： John Kichul Lee ,  David A. Cathey, Jr. ,  Kevin Tjaden

IPC: H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01J1/30

CPC classification number: H01L28/24 ,  H01J9/025 ,  H01L28/20 ,  H01J2201/319

Abstract: A high resistance resistor for regulating current in a field emission display is integrated into circuitry of the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).

Abstract translation: 用于调节场发射显示器中的电流的高电阻电阻器被集成到场致发射显示器的电路中。 电阻器与发射器位置电气连通，用于场发射显示器和其他电路部件，例如接地。 高电阻电阻器可以形成为高电阻率材料的层，例如本征多晶硅，掺杂有导电性降解掺杂剂的多晶硅，轻掺杂多晶硅，氮氧化钛，氮氧化钽或沉积在基板上的玻璃类型材料 的场发射显示。 在高电阻率材料中形成触点，以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。 触点可以形成为低电阻触点（例如欧姆接触）或作为高电阻触点（例如肖特基触点）。

公开(公告)号：US5684356A

公开(公告)日：1997-11-04

申请号：US625051

申请日：1996-03-29

Applicant: Shin-Puu Jeng ,  Bruce E. Gnade

Inventor： Shin-Puu Jeng ,  Bruce E. Gnade

IPC: C01B3/02 ,  H01J1/304 ,  H01J9/02 ,  H01J29/94 ,  H01J19/24 ,  H01J9/395

CPC classification number: H01J1/3042 ,  C01B3/02 ,  H01J29/94 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: An emitter structure 12 for use in a field emission display device comprises a ballast layer 17 overlying ah electrically conductive coating 16 (cathode electrode), which is itself formed on an electrically insulating substrate 18. A gate electrode comprises a coating of an electrically conductive material 22 which is deposited on an insulating layer 20. Cone-shaped microtips 14 formed within apertures 34 through conductive layer 22 and insulating layer 20. In the present invention, insulating layer 20 comprises a dielectric material capable of desorbing at least ten atomic percent hydrogen, which may illustratively comprise hydrogen silsesquioxane (HSQ). HSQ is an abundant source of hydrogen which keeps deleterious oxides from forming on microtip emitters 14. HSQ also reduces the capacitance formed by cathode electrode 16 and gate electrode 22, since its relative dielectric constant is less than 3.5. In alternative embodiments, the gate insulation layer 20 additionally includes one or more sublayers of a more dense insulating material 20b and 20c, typically a plasma deposited silicon dioxide.

Abstract translation: 在场致发射显示装置中使用的发射极结构12包括覆盖在导电涂层16（阴极电极）上的压载层17，其本身形成在电绝缘基板18上。栅电极包括导电材料 沉积在绝缘层20上的锥形微尖头14形成在孔34内，通过导电层22和绝缘层20.在本发明中，绝缘层20包括能够解吸至少十个原子百分比的氢的电介质材料， 其可以说明性地包含氢倍半硅氧烷（HSQ）。 HSQ是丰富的氢源，其在微尖端发射体14上保持有害氧化物的形成。由于其相对介电常数小于3.5，所以HSQ还降低了由阴极电极16和栅电极22形成的电容。 在替代实施例中，栅极绝缘层20另外包括一个或多个更致密绝缘材料20b和20c的子层，通常为等离子体沉积的二氧化硅。

公开(公告)号：US5633560A

公开(公告)日：1997-05-27

申请号：US697703

申请日：1996-08-27

Applicant: Jammy C.-M. Huang

Inventor： Jammy C.-M. Huang

IPC: H01J1/304 ,  H01J1/00

CPC classification number: H01J1/3042 ,  H01J2201/304 ,  H01J2201/30407 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cold cathode field emission display is described. A key feature of its design is that each individual microtip has its own ballast resistor. The latter is formed from a resistive layer that has been interposed between the cathode line and the substrate. When openings for the microtips are formed in the gate line, extending down as far as the resistive layer, an overetching step is introduced. This causes the dielectric layer to be substantially undercut immediately above the resistive layer thereby creating an annular resistor positioned between the gate line and the base of the microtip.

Abstract translation: 描述冷阴极场致发射显示器。 其设计的一个关键特征是每个单独的微尖端都有自己的镇流电阻。 后者由介于阴极线和衬底之间的电阻层形成。 当在栅极线上形成微尖端的开口时，向下延伸到电阻层一侧，引入过蚀刻步骤。 这使得电介质层在电阻层的正上方基本上被切下，从而形成位于微尖端的栅极线和基极之间的环形电阻器。

公开(公告)号：US5632664A

公开(公告)日：1997-05-27

申请号：US535420

申请日：1995-09-28

Applicant: John W. Scoggan ,  Edward C. Lee

Inventor： John W. Scoggan ,  Edward C. Lee

IPC: H01J1/304 ,  H01J1/30 ,  H01J9/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emission device cathode (10) may be fabricated by forming a dielectric layer (14) on an upper surface of a resistive layer (12). A gate layer (16) is formed on the dielectric layer (14). An opening is formed in the gate layer (16) and a microtip cavity (18) is formed in the dielectric layer (14). The microtip cavity (18) extends through the opening in the gate layer (16) to the resistive layer (12). A conductive layer is formed on the gate layer (16) and the resistive layer (12) within the microtip cavity (18) to form a conductive opening layer (20) on the gate layer (16) and a microtip cavity layer (22) on the resistive layer (12). A nonrefractory metal layer is formed on the conductive opening layer (20) and the microtip cavity layer (22) to form a nonrefractory layer (26) on the conductive opening layer (20) and to form a microtip metal nonrefractory base layer (24) on the microtip cavity layer (22) such that the microtip metal nonrefractory base layer (24) serves as the base layer for a microtip (28) within the microtip cavity (18). A microtip metal refractory tip layer (30) is formed on the microtip metal nonrefractory base layer (24) to serve as the tip of the microtip (28). Finally, polishing is performed to remove a portion of the layers on the gate layer (16). The polishing continues until the microtip (28) is exposed.

Abstract translation: 场发射器件阴极（10）可以通过在电阻层（12）的上表面上形成介电层（14）来制造。 在电介质层（14）上形成栅层（16）。 在栅极层（16）中形成有开口，并且在电介质层（14）中形成微尖端腔（18）。 微尖端腔（18）延伸穿过栅极层（16）中的开口至电阻层（12）。 导电层形成在微电极腔（18）内的栅极层（16）和电阻层（12）上，以在栅极层（16）和微尖端腔层（22）上形成导电开口层（20） 在电阻层（12）上。 在导电开口层（20）和微尖端腔层（22）上形成非耐火金属层，以在导电开口层（20）上形成非抗蚀层（26）并形成微尖金属非耐火基层（24） 在微尖端腔层（22）上，使得微尖金属非耐火基底层（24）用作微尖端腔（18）内的微尖端（28）的基底层。 在微尖金属非耐火基层（24）上形成微尖端金属耐火顶层（30），作为微尖端（28）的尖端。 最后，进行抛光以去除栅极层（16）上的一部分层。 抛光继续，直到微尖（28）暴露。

公开(公告)号：US5593335A

公开(公告)日：1997-01-14

申请号：US223528

申请日：1994-04-05

Applicant: Hidetoshi Suzuki ,  Yoshiyuki Osada ,  Ichiro Nomura ,  Takeo Ono ,  Hisaaki Kawade ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Yasuhiro Hamamoto ,  Tatsuya Iwasaki ,  Aoji Isono ,  Noritake Suzuki ,  Yasuyuki Todokoro ,  Masahiro Okuda ,  Katsuhiko Shinjo

Inventor： Hidetoshi Suzuki ,  Yoshiyuki Osada ,  Ichiro Nomura ,  Takeo Ono ,  Hisaaki Kawade ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Yasuhiro Hamamoto ,  Tatsuya Iwasaki ,  Aoji Isono ,  Noritake Suzuki ,  Yasuyuki Todokoro ,  Masahiro Okuda ,  Katsuhiko Shinjo

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J31/127 ,  H01J9/027 ,  G09G2300/0885 ,  G09G2310/06 ,  H01J2201/3165 ,  H01J2201/319 ,  H01J2329/00

Abstract: A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.

Abstract translation: 制造具有沿行和列方向布置在基板上的多个表面传导电子发射器件的电子源的方法包括形成多个表面传导电子发射器件的电子发射部分。 通过在通过多个表面传导电子发射器件将电流分成多个组时供给电流来进行形成。 图像形成装置根据图像信号使电流通过形成在基板上并以矩阵的形式排列的多个电子源，并且通过响应于发射的电子的发光形成图像 从多个电子源。

公开(公告)号：US5584739A

公开(公告)日：1996-12-17

申请号：US194465

申请日：1994-02-08

Applicant: Shigeo Itoh ,  Isao Yamada

Inventor： Shigeo Itoh ,  Isao Yamada

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/319 ,  H01J2209/015 ,  H01J2237/0812 ,  H01J2237/31732

Abstract: A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.

Abstract translation: 提供一种制造场致发射元件的方法，该场致发射元件包括基片，以及各自布置在基片上的发射极和栅极。 发射极在其至少顶端形成电子放电部，该电子放电部由金属或半导体形成为单晶结构，或者通过沉积在至少沿垂直于衬底的方向优先取向的多晶结构。

公开(公告)号：US5583393A

公开(公告)日：1996-12-10

申请号：US217416

申请日：1994-03-24

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: H01J1/304 ,  H01J23/06 ,  H01J29/08 ,  H01J29/20 ,  H01J31/12 ,  H01J37/073 ,  H01J63/04 ,  H01J1/30 ,  H01J29/18

CPC classification number: H01J63/04 ,  H01J1/304 ,  H01J23/06 ,  H01J29/085 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2237/06341 ,  H01J2237/08 ,  H01J2237/0835

Abstract: A field emitter device for selective emission of an electron and/or ion beam comprising a substrate member having an array of field emitter elements thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article for producing an output in response to impingement of electron beams thereon, comprising a substrate member on which is disposed an array of phosphor elements, with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus comprising such field emitter device and display article, such as a flat panel display.

Abstract translation: 一种用于选择性地发射电子和/或离子束的场发射器件，包括其上具有阵列的场发射极元件的衬底构件，其中场发射极元件和/或衬底构件具有变化的构象，产生适当聚焦的光束， /或方向角色。 还公开了一种用于响应于其上的电子束的撞击而产生输出的显示器件，包括：衬底构件，荧光体元件阵列上布置有金刚石膜，以将荧光体元件保持在 位置。 还公开了包括这样的场发射器装置和显示制品的场致发射装置，例如平板显示器。

公开(公告)号：US5578906A

公开(公告)日：1996-11-26

申请号：US416120

申请日：1995-04-03

Applicant: Robert T. Smith

Inventor： Robert T. Smith

IPC: H01J29/04 ,  G09G3/22 ,  H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  H04N5/66 ,  G09G3/10

CPC classification number: G09G3/22 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission device (100) having an electron emitter (101), for emitting electrons, an extraction electrode (102) proximally disposed with respect to the electron emitter (101), an anode (103) for collecting some of any emitted electrons is formed. Anode (103) is distally disposed with respect to the electron emitter (101). A transient current source (110) is operably coupled between the electron emitter (101) and a reference potential (107). Transient current source (110) provides a transient current to the electron emitter (101) to enhance response time for emission of electrons from the electron emitter (101) of the field emission device (100). A controlling input line (111) is provided for current controlling signals to the transient current source (110) with the controlling input line (111) being operably coupled to the transient current source (110).

Abstract translation: 具有用于发射电子的电子发射体（101）的场发射器件（100），相对于电子发射器（101）近端设置的引出电极（102），用于收集一些任何发射电子的阳极（103） 形成。 阳极（103）相对于电子发射体（101）向远侧设置。 瞬态电流源（110）可操作地耦合在电子发射器（101）和参考电位（107）之间。 瞬态电流源（110）向电子发射器（101）提供瞬态电流，以增强从场致发射器件（100）的电子发射器（101）发射电子的响应时间。 控制输入​​线（111）被提供用于电流控制到瞬态电流源（110）的信号，控制输入线（111）可操作地耦合到瞬态电流源（110）。

公开(公告)号：US5578185A

公开(公告)日：1996-11-26

申请号：US383408

申请日：1995-01-31

Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  C25D5/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.

Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了一种多层结构，其包括基板，绝缘层，位于绝缘层的顶表面上的金属栅极层和位于金属栅极层顶表面上的栅极封装层。 提供多个栅极并且在绝缘层的顶部上限定多个孔。 在绝缘层的顶表面上的边缘处的孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 用细丝材料电镀细孔以产生多根长丝。 孔可以被过度铺展以产生多根细丝。 细丝在孔中垂直自对准。