公开(公告)号：US20140151823A1

公开(公告)日：2014-06-05

申请号：US13953238

申请日：2013-07-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bruce C.S. Chou

IPC: B81B3/00

CPC classification number: B81B3/0018 ,  B81B2203/0307 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0109 ,  H01L24/13 ,  H01L24/80 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/13009 ,  H01L2224/13138 ,  H01L2224/80011 ,  H01L2224/80012 ,  H01L2224/80013 ,  H01L2224/80031 ,  H01L2224/80047 ,  H01L2224/8009 ,  H01L2224/80092 ,  H01L2224/80931 ,  H01L2224/81002 ,  H01L2224/81007 ,  H01L2224/811 ,  H01L2224/9202 ,  H01L2924/1461 ,  H01L21/76898 ,  H01L2924/01014 ,  H01L2924/00

Abstract: The present invention provides a MEMS structure comprising confined sacrificial oxide layer and a bonded Si layer. Polysilicon stack is used to fill aligned oxide openings and MEMS vias on the sacrificial layer and the bonded Si layer respectively. To increase the design flexibility, some conductive polysilicon layer can be further deployed underneath the bonded Si layer to form the functional sensing electrodes or wiring interconnects. The MEMS structure can be further bonded to a metallic layer on top of the Si layer and the polysilicon stack.

Abstract translation: 本发明提供一种MEMS结构，其包括受限的牺牲氧化物层和结合的Si层。 多晶硅叠层用于在牺牲层和结合的Si层上分别填充对准的氧化物开口和MEMS通孔。 为了增加设计灵活性，可以将一些导电多晶硅层进一步布置在结合的Si层下面以形成功能感测电极或布线互连。 MEMS结构可以进一步结合到Si层和多晶硅叠层顶部的金属层。

公开(公告)号：US20120171798A1

公开(公告)日：2012-07-05

申请号：US11737545

申请日：2007-04-19

Applicant: Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

Inventor： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC: H01L21/02

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US20120115311A1

公开(公告)日：2012-05-10

申请号：US13293652

申请日：2011-11-10

Applicant: Sébastien DESPLOBAIN ,  Frederic-Xavier GAILLARD ,  Yves MORAND ,  Fabrice NEMOUCHI

Inventor： Sébastien DESPLOBAIN ,  Frederic-Xavier GAILLARD ,  Yves MORAND ,  Fabrice NEMOUCHI

IPC: H01L21/30

CPC classification number: H01L21/306 ,  B81C1/0038 ,  B81C2201/0109 ,  B81C2201/0115

Abstract: The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 1018 atoms/cm3or P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte.

Abstract translation: 在衬底上形成多层结构的方法包括提供连续包含电子空穴阻挡层的叠层，由具有大于或等于1018原子/ cm 3的掺杂浓度的N掺杂半导体材料或P掺杂半导体材料制成的第一层 ，以及由不同性质的半导体材料制成的第二层。 在第一层和衬底之间形成横向电接触垫，并且在电解质中对第一层的材料进行阳极处理。

公开(公告)号：US20120115269A1

公开(公告)日：2012-05-10

申请号：US12940348

申请日：2010-11-05

Applicant: James F. Detry

Inventor： James F. Detry

IPC: H01L21/306

CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/0109

Abstract: Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial silicon layer is coupled to the substrate through one or more gaps provided in the patterned layer of Aerogel material; and removing the Aerogel sacrificial layer by exposing the Aerogel sacrificial layer to a removal liquid.

Abstract translation: 提供了用于在MEMS器件制造中处理牺牲层的系统和方法。 在一个实施例中，一种方法包括：将图案化的气凝胶材料层施加到基底上以形成气凝胶牺牲层; 在所述气凝胶牺牲层上施加至少一个非牺牲硅层，其中所述非牺牲硅层通过设置在所述图案化的气凝胶材料层中的一个或多个间隙而耦合到所述衬底; 并通过将气凝胶牺牲层暴露于去除液体来除去气凝胶牺牲层。

公开(公告)号：US20110318861A1

公开(公告)日：2011-12-29

申请号：US12973285

申请日：2010-12-20

Applicant: Christopher V. JAHNES ,  Anthony K. STAMPER

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: H01L21/02 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a lower wiring layer. The method further includes forming a layer. The method further includes forming a second sacrificial cavity layer over the first sacrificial layer and in contact with the layer. The method further includes forming a lid on the second sacrificial cavity layer. The method further includes forming at least one vent hole in the lid, exposing a portion of the second sacrificial cavity layer. The method further includes venting or stripping the second sacrificial cavity layer such that a top surface of the second sacrificial cavity layer is no longer touching a bottom surface of the lid, before venting or stripping the first sacrificial cavity layer thereby forming a first cavity and second cavity, respectively.

Abstract translation: 形成至少一个微机电系统（MEMS）腔的方法包括在下布线层上形成第一牺牲腔层。 该方法还包括形成层。 该方法还包括在第一牺牲层上形成与层接触的第二牺牲腔层。 该方法还包括在第二牺牲腔层上形成盖子。 该方法还包括在盖中形成至少一个通气孔，暴露第二牺牲腔层的一部分。 该方法还包括排气或剥离第二牺牲腔层，使得第二牺牲腔层的顶表面在不排除或剥离第一牺牲腔层之前不再接触盖的底表面，从而形成第一腔和第二腔 腔。

公开(公告)号：US20110316098A1

公开(公告)日：2011-12-29

申请号：US12973333

申请日：2010-12-20

Applicant: George A. DUNBAR, III ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER

Inventor： George A. DUNBAR, III ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括形成用于形成下腔的较低牺牲材料。 该方法还包括通过将下腔体连接到上部空腔来形成空腔。 空腔通孔形成有圆形或倒角边缘的顶视图。 该方法还包括在空腔内部和上方形成上部牺牲材料，其具有基于空腔通路的轮廓的合成表面。 上空腔形成有没有会干扰MEMS梁的结构的盖，包括：在上牺牲材料的所得表面上沉积盖材料; 并且排出上部牺牲材料以形成上部空腔，使得盖子材料形成与上部牺牲材料的合成表面一致的盖子。

公开(公告)号：US20110031567A1

公开(公告)日：2011-02-10

申请号：US12850548

申请日：2010-08-04

Applicant: Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

Inventor： Pietro Corona ,  Stefano Losa ,  Ilaria Gelmi ,  Roberto Campedelli

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00476 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C2201/0109

Abstract: A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity.

Abstract translation: 一种用于制造MEMS器件的方法，其中底部硅区域形成在衬底上和绝缘层上; 电介质的牺牲区形成在底部区域上; 半导体材料的膜区域在牺牲区域上外延生长; 将膜区域向下挖到牺牲区域以形成通孔; 孔的侧壁和底部以保形方式完全涂覆有多孔材料层; 牺牲区域的至少一部分被选择性地通过多孔材料层去除并形成空腔; 并且孔填充有填充材料，以便形成悬浮在空腔上方的整体膜。

公开(公告)号：US07856804B2

公开(公告)日：2010-12-28

申请号：US12719999

申请日：2010-03-09

Applicant: Richard I. Laming ,  Mark Begbie ,  Anthony Traynor

Inventor： Richard I. Laming ,  Mark Begbie ,  Anthony Traynor

IPC: H01L29/34

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C99/004 ,  B81C2201/0109 ,  H04R7/10 ,  H04R7/18 ,  H04R19/005 ,  H04R2307/207 ,  Y10S977/733

Abstract: A MEMS device comprising a flexible membrane that is free to move in response to pressure differences generated by sound waves. A first electrode mechanically coupled to the flexible membrane, and together form a first capacitive plate. A second electrode mechanically coupled to a generally rigid structural layer or back-plate, which together form a second capacitive plate. A back-volume is provided below the membrane. A first cavity located directly below the membrane. Interposed between the first and second electrodes is a second cavity. A plurality of bleed holes connected the first cavity and the second cavity. Acoustic holes are arranged in the back-plate so as to allow free movement of air molecules, such that the sound waves can enter the second cavity. The first and second cavities in association with the back-volume allow the membrane to move in response to the sound waves entering via the acoustic holes in the back-plate.

Abstract translation: 包括柔性膜的MEMS器件，其可响应于由声波产生的压力差而自由移动。 机械地耦合到柔性膜的第一电极，并且一起形成第一电容板。 机械耦合到大致刚性的结构层或背板的第二电极，它们一起形成第二电容板。 在膜的下方提供背部体积。 位于膜下方的第一腔。 介于第一和第二电极之间的是第二腔。 多个排放孔连接第一腔和第二腔。 声孔布置在背板中，以便允许空气分子的自由移动，使得声波可以进入第二腔。 与背容积相关联的第一和第二空腔允许膜响应于通过背板中的声孔进入的声波而移动。

公开(公告)号：US07838321B2

公开(公告)日：2010-11-23

申请号：US11312619

申请日：2005-12-20

Applicant: Peter J. Nystrom ,  Nancy Jia ,  Kee Ryu

Inventor： Peter J. Nystrom ,  Nancy Jia ,  Kee Ryu

IPC: H01L21/00

CPC classification number: B81C1/00801 ,  B41J2/14 ,  B41J2/16 ,  B41J2/1626 ,  B41J2/1639 ,  B41J2002/043 ,  B81B2201/052 ,  B81C2201/0109 ,  B81C2201/0133 ,  B81C2201/014

Abstract: This describes a starting structure and method for forming a micro-mechanical device. These devices have several uses in both government and commercial applications. The starting structure can be sold or supplied to others who will then make a final product, or it can be used directly to make a final product. An appropriate use of this starting structure is to make deformable devices useful in an inkjet printing device.

Abstract translation: 这描述了用于形成微机械装置的起始结构和方法。 这些设备在政府和商业应用中都有多种用途。 起始结构可以出售或提供给随后制造最终产品的其他人，或者可以直接用于制造最终产品。 适当地使用该起始结构是使可变形装置在喷墨打印装置中有用。

公开(公告)号：US20100240215A1

公开(公告)日：2010-09-23

申请号：US12686878

申请日：2010-01-13

Applicant: Yao-Te Huang ,  Chia-Hua Chu ,  Yu-Nu Hsu ,  Chun-Wen Cheng ,  Li-Chung Peng

Inventor： Yao-Te Huang ,  Chia-Hua Chu ,  Yu-Nu Hsu ,  Chun-Wen Cheng ,  Li-Chung Peng

IPC: H01L21/28 ,  B05D1/32 ,  B05D5/12 ,  B05D3/14 ,  H01G9/00

CPC classification number: H01G7/06 ,  B81B2201/0221 ,  B81C1/0015 ,  B81C2201/0109 ,  H01G7/00 ,  H01L28/60

Abstract: MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.

Abstract translation: 提供了用于利用牺牲层的MEMS器件和方法。 一个实施例包括在衬底上形成第一牺牲层和第二牺牲层，其中第二牺牲层用作粘附层。 一旦形成，第一牺牲层和第二牺牲层被图案化，使得第二牺牲层被底切以在第一牺牲层和第二牺牲层之间形成台阶。 在第二牺牲层上形成顶部电容器电极，并且去除第一牺牲层和第二牺牲层以便释放顶部电容器电极。