公开(公告)号：US20030234179A1

公开(公告)日：2003-12-25

申请号：US10434315

申请日：2003-05-07

Applicant: MEMGen Corporation

Inventor： Christopher A. Bang

IPC: C25D005/02 ,  C25D001/10

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFABnull formation process), and typically contain features having resolutions within the 1 to 100 nullm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：US20030153116A1

公开(公告)日：2003-08-14

申请号：US10319174

申请日：2002-12-13

Inventor： L. Richard Carley ,  Suresh Santhanam ,  Hsu Yu-Nu

IPC: H01L021/00 ,  H01L021/30 ,  H01L021/76 ,  H01L021/46

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.

Abstract translation: 本发明包括一种在密封空腔中制造MEMS微结构的方法，其中蚀刻剂入口孔作为制造工艺的副产品而产生，而没有额外的步骤来蚀刻盖层中的孔。 该方法涉及将牺牲材料层延伸超过盖层的水平边界。 盖层由通过牺牲层蚀刻的孔中的沉积形成的柱支撑，并且当多余的牺牲材料被蚀刻掉时形成蚀刻剂入口孔，从而在支撑盖的支柱之间留下空隙。

公开(公告)号：US20030141561A1

公开(公告)日：2003-07-31

申请号：US10203729

申请日：2002-11-08

Inventor： Frank Fischer ,  Peter Hein ,  Eckhard Graf

IPC: H01L029/82

CPC classification number: B81C1/00801 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81C2201/0109 ,  B81C2201/053 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: The present invention relates to a method for manufacturing a micromechanical component (100), that has at least one hollow space (110) and a functional element (12) that is provided at least partially in the hollow space (110) and/or a functional layer (13a, 13b, 13c) that is provided at least partially therein, and to a micromechanical component (100) that is manufactured in accordance with the method, according to the species of the relevant independent patent claim. To reduce manufacturing costs, the functional element (12) and/or the functional layer (13a, 13b, 13c) is provided with a first protective layer (41; 71) at least in an area that directly or indirectly borders on a first sacrificial layer (52), which temporarily occupies the space of the hollow space (22) that is subsequently formed in one or a plurality of etching steps (FIG. 4; FIG. 7), the material of the first protective layer (41) being selected such that at least one etching process and/or etching medium, which etches or dissolves the first sacrificial layer (52), either does not substantially attack the first protective layer (41; 71) or does so only at a reduced etching rate in comparison to the first sacrificial layer (52).

Abstract translation: 本发明涉及一种用于制造微机械部件（100）的方法，其具有至少一个中空空间（110）和至少部分地设置在中空空间（110）中的功能元件（12）和/或 至少部分地设置有功能层（13a，13b，13c）以及根据该方法制造的微机电部件（100）。 为了降低制造成本，功能元件（12）和/或功能层（13a，13b，13c）至少在直接或间接地接合在第一牺牲部分上的区域中设置有第一保护层（41; 71） （52），其临时占据随后在一个或多个蚀刻步骤中形成的中空空间（22）的空间（图4;图7），第一保护层（41）的材料为 被选择为使得蚀刻或溶解第一牺牲层（52）的至少一个蚀刻工艺和/或蚀刻介质基本上不会攻击第一保护层（41; 71），或者仅以降低的蚀刻速率 与第一牺牲层（52）的比较。

公开(公告)号：US20030117257A1

公开(公告)日：2003-06-26

申请号：US10290807

申请日：2002-11-08

Applicant: Coventor, Inc.

Inventor： Shawn Jay Cunningham

IPC: H01C010/50

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Electrothermal Self-Latching MEMS Switch and Method. According to one embodiment, a microscale switch having a movable microcomponent is provided and includes a substrate having a stationary contact. The switch can also include a structural layer having a movable contact positioned for contacting the stationary contact when the structural layer moves toward the substrate. An electrothermal latch attached to the structural layer and having electrical communication with the movable contact to provide current flow between the electrothermal latch and the stationary contact when the movable contact contacts the stationary contact for maintaining the movable contact in contact with the stationary contact.

Abstract translation: 电热自锁式MEMS开关及方法。 根据一个实施例，提供具有可移动微组件的微型开关，并且包括具有固定触点的基板。 该开关还可以包括具有可移动触点的结构层，该结构层定位成当结构层向衬底移动时与固定触点接触。 一个电热锁定件，其连接到结构层并且当可动触点接触固定触点以便使可动触点与固定触点接触时，与可动触头电连通以提供电热闩和固定触点之间的电流。

公开(公告)号：US20020151100A1

公开(公告)日：2002-10-17

申请号：US10014880

申请日：2001-12-11

Applicant: STMicroelectronics S.r.l.

Inventor： Salvatore Coffa ,  Luigi Occhipinti

IPC: H01L021/00 ,  H01L021/76 ,  H01L029/82

CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0115 ,  G01L9/0042

Abstract: Abstract of the Disclosure A monolithically integrated pressure sensor is produced through micromechanical surface structure definition techniques. A microphone cavity in the semiconductor substrate may be monolithically formed by plasma etching the front side or the back side of the silicon wafer to cut a plurality of trenches or holes deep enough to extend for at least part of its thickness into a doped buried layer of opposite type of conductivity of the substrate and of the epitaxial layer grown over it. The method may also include electrochemically etching through such trenches, the silicon of the buried layer with an electrolytic solution suitable for selectively etching the doped silicon of the opposite type of conductivity, thereby making the silicon of the buried layer porous. The method may also include oxidizing and leaching away the silicon so made porous.

Abstract translation: 公开的摘要通过微机械表面结构定义技术制造单片集成的压力传感器。 半导体衬底中的麦克风腔可以通过等离子体蚀刻硅晶片的前侧或背面来整体地形成，以切割多个深度足够的沟槽或孔，以使其厚度的至少一部分延伸到 衬底和在其上生长的外延层的相反类型的导电性。 该方法还可以包括通过这样的沟槽电化学蚀刻掩埋层的硅，其中电解溶液适于选择性地蚀刻具有相反导电性的掺杂硅，从而使掩埋层的硅多孔化。 该方法还可以包括氧化和浸出如此制成的多孔的硅。

公开(公告)号：US06448622B1

公开(公告)日：2002-09-10

申请号：US09617300

申请日：2000-07-17

Applicant: Andrea Franke ,  Roger T. Howe ,  Tsu-Jae King

Inventor： Andrea Franke ,  Roger T. Howe ,  Tsu-Jae King

IPC: H01L2982

CPC classification number: B81C1/00246 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2203/0735 ,  Y10S438/933

Abstract: This invention relates to micro-electromechanical systems using silicon-germanium films. Such a system includes one or more layers of Si1−xGex, deposited on a substrate, where 0

Abstract translation: 本发明涉及使用硅 - 锗膜的微机电系统。 这种系统包括沉积在衬底上的一层或多层Si1-xGex，其中0

公开(公告)号：US20020117728A1

公开(公告)日：2002-08-29

申请号：US09921456

申请日：2001-08-03

Inventor： Timothy J. Brosnihhan ,  Michael W. Judy

IPC: H01L021/76 ,  H01L031/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/033 ,  B81C1/00142 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/014

Abstract: A microelectromechanical system is fabricated from a substrate having a handle layer, a silicon sacrificial layer and a device layer. A micromechanical structure is etched in the device layer and the underlying silicon sacrificial layer is etched away to release the micromechanical structure for movement. One particular micromechanical structure described is a micromirror.

Abstract translation: 由具有手柄层，硅牺牲层和器件层的衬底制造微机电系统。 在器件层中蚀刻微机械结构，并蚀刻掉下面的硅牺牲层以释放用于移动的微机械结构。 所描述的一个特定的微机械结构是微镜。

公开(公告)号：US06362512B1

公开(公告)日：2002-03-26

申请号：US09468423

申请日：1999-12-21

Applicant: Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

Inventor： Joel A. Kubby ,  Jingkuang Chen ,  Alex T. Tran

IPC: H01L2982

CPC classification number: B81B3/0083 ,  B81C2201/0109 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2201/053 ,  G02B6/4214

Abstract: A device structure is defined in a single-crystal silicon (SCS) layer separated by an insulator layer, such as an oxide layer, from a handle wafer. The SCS can be attached to the insulator by wafer bonding, and is selectively etched, as by photolithographic patterning and dry etching. A sacrificial oxide layer can be deposited on the etched SCS, on which polysilicon can be deposited. A protective oxide layer is deposited, and CMOS circuitry and sensors are integrated. Silicon microstructures with sensors connected to CMOS circuitry are released. In addition, holes can be etched through the sacrificial oxide layer, sacrificial oxide can be deposited on the etched SCS, polysilicon can be deposited on the sacrificial oxide, PSG can be deposited on the polysilicon layer, which both can then be patterned.

Abstract translation: 器件结构被限定在由来自处理晶片的绝缘体层（例如氧化物层）分离的单晶硅（SCS）层中。 SCS可以通过晶片接合连接到绝缘体，并且通过光刻图案和干蚀刻被选择性地蚀刻。 可以在蚀刻的SCS上沉积牺牲氧化物层，在其上沉积多晶硅。 沉积保护性氧化物层，并集成CMOS电路和传感器。 释放了连接到CMOS电路的传感器的硅微结构。 此外，可以通过牺牲氧化物层蚀刻孔，牺牲氧化物可以沉积在蚀刻的SCS上，多晶硅可以沉积在牺牲氧化物上，PSG可以沉积在多晶硅层上，然后可以对其进行图案化。

公开(公告)号：US20010040675A1

公开(公告)日：2001-11-15

申请号：US09767632

申请日：2001-01-22

Inventor： Randall J. True ,  Andrew G. Huibers

IPC: G03B027/32

CPC classification number: B81C1/00658 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/019 ,  B82Y30/00 ,  G02B26/0841

Abstract: A method is disclosed for forming a micromechanical device. The method includes providing a sacrificial layer on a substrate, providing a first structural layer on the sacrificial layer and removing a portion of the first structural layer in an area intended for a hinge. Then, a second structural layer is provided over the first layer and in the removed area for the hinge. The second layer is preferably deposited directly on the sacrificial layer in this area. Last, a metal layer is deposited and the various layers are patterned to define a micromechanical device having one portion (e.g. a mirror plate) more stiff than another portion (e.g. hinge). Because a portion of the reinforcing layer is removed, there is no overetching into the hinge material. Also, because the metal layer is provided last, materials can be provided at higher temperatures, and the method can be performed in accordance with CMOS foundry rules and thus can be performed in a CMOS foundry.

Abstract translation: 公开了一种用于形成微机械装置的方法。 该方法包括在衬底上提供牺牲层，在牺牲层上提供第一结构层，并且去除用于铰链的区域中的第一结构层的一部分。 然后，第二结构层设置在第一层之上和铰链的去除区域中。 第二层优选直接沉积在该区域的牺牲层上。 最后，沉积金属层，并且将各层图案化以限定具有比另一部分（例如铰链）更硬的一部分（例如，镜板）的微机械装置。 由于加强层的一部分被去除，所以不会对铰链材料进行过蚀刻。 此外，由于最后提供金属层，所以可以在更高的温度下提供材料，并且该方法可以根据CMOS铸造规则进行，因此可以在CMOS铸造中进行。

公开(公告)号：US06268232B1

公开(公告)日：2001-07-31

申请号：US09302224

申请日：1999-04-29

Applicant: Helmut Skapa ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Heinz-Georg Vossenberg

Inventor： Helmut Skapa ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Heinz-Georg Vossenberg

IPC: H01L2100

CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81C1/00571 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/056 ,  B81C2203/0109 ,  G01P1/023

Abstract: A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.

Abstract translation: 用于制造微机械部件，特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层，其中掩埋有图案化的电路迹线层。 包括第一区域和第二区域的导电层设置在绝缘层上，并且可移动元件通过形成第一多个沟槽而被构造在第一区域中，并且通过使用蚀刻剂去除至少一部分 绝缘层从导电层下面。 通过构造第二多个沟槽，形成接触元件并在第二区域中电连接到电路迹线层，并且所得到的可移动元件被封装在第一区域中。 在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。