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    Field emission electron source employing a diamond coating
    381.
    发明授权
    Field emission electron source employing a diamond coating 失效
    使用金刚石涂层的场发射电子源

    公开(公告)号：US5258685A

    公开(公告)日：1993-11-02

    申请号：US883448

    申请日：1992-05-15

    Applicant: James E. Jaskie ,  Robert C. Kane

    Inventor： James E. Jaskie ,  Robert C. Kane

    IPC: H01J1/304 ,  H01J9/02 ,  H01J1/02 ,  H01J1/15 ,  H01J1/16

    CPC classification number: B82Y15/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30457

    Abstract: A field emission electron emitter including a coating of diamond material disposed on a surface of a selectively formed conductive/semiconductive electrode wherein carbon ions are implanted at a surface of the electrode to function as nucleation sites for the diamond formation. A second field emission electron emitter is constructed by implanting carbon ions at a surface of a selectively shaped substrate to function as nucleation sites for the diamond formation. A conductive layer is deposited over the diamond and the substrate is removed to leave an electron emitter with a diamond coating.

    Abstract translation: 一种场致发射电子发射器，包括设置在选择性地形成的导电/半导体电极的表面上的金刚石材料涂层，其中碳离子注入电极的表面，起到金刚石形成的成核位置的作用。 第二场致发射电子发射体是通过将碳离子注入选择性成形的衬底的表面而构成的，用作金刚石形成的成核位置。 在金刚石上沉积导电层，去除衬底以留下具有金刚石涂层的电子发射体。

    Method of forming field emitter device with diamond emission tips
    383.
    发明授权
    Method of forming field emitter device with diamond emission tips 失效
    用金刚石发射尖端形成场发射器件的方法

    公开(公告)号：US5199918A

    公开(公告)日：1993-04-06

    申请号：US789237

    申请日：1991-11-07

    Applicant: Nalin Kumar

    Inventor： Nalin Kumar

    IPC: H01J1/304 ,  H01J9/02

    CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

    Abstract: A field emitter device comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The device is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.

    Abstract translation: 一种场致发射器件，包括导电金属和具有负电子亲和力的金刚石发射尖端，与金属欧姆接触并突出在金属上方。 该器件通过用具有负电子亲和性的绝缘金刚石膜和具有尖峰和谷的顶表面的衬底涂覆衬底，在金刚石膜上沉积导电金属，以及施加蚀刻以暴露尖峰而不暴露谷，从而形成 金刚石发射尖端突出高于导电金属的高度小于金刚石膜中电子的平均自由程。

    Diamond probe and forming method thereof
    384.
    发明授权
    Diamond probe and forming method thereof 失效
    金刚石探针及其成型方法

    公开(公告)号：US5010249A

    公开(公告)日：1991-04-23

    申请号：US406458

    申请日：1989-09-13

    Applicant: Akira Nishikawa

    Inventor： Akira Nishikawa

    IPC: G01B7/34 ,  G01N23/00 ,  G01Q60/16 ,  G01Q70/14 ,  H01J1/304 ,  H01J9/02

    CPC classification number: G01Q70/16 ,  B82Y35/00 ,  G01Q70/14 ,  H01J9/025 ,  H01J2201/30457

    Abstract: The present invention provides a method of manufacturing a probe having an extremely hard and acute tip, which involves the steps of precipitating a carbon film mixed with a columnar diamond crystal and an amorphous carbonic component at a tip of a probe material; and protruding the columnar diamond crystal by selectively etching the amorphous carbonic component. According to the present invention, it is possible to improve a resolving power of the analyzing device and probe durability as well.

    Abstract translation: 本发明提供一种制造具有极硬尖锐尖端的探针的方法，其包括在探针材料的尖端沉淀与柱状金刚石晶体和无定形碳质成分混合的碳膜的步骤; 并通过选择性地蚀刻无定形碳质成分来突出柱状金刚石晶体。 根据本发明，也可以提高分析装置的分辨率和探针耐久性。

    Microcasting of microminiature tips
    385.
    发明授权
    Microcasting of microminiature tips 失效
    微型微型微尖

    公开(公告)号：US4916002A

    公开(公告)日：1990-04-10

    申请号：US297059

    申请日：1989-01-13

    Applicant: Thomas E. Carver

    Inventor： Thomas E. Carver

    IPC: B81C1/00 ,  C23C16/04 ,  G01Q60/10 ,  G01Q60/24 ,  G01Q70/14 ,  G01Q70/16 ,  H01J9/02

    CPC classification number: G01Q70/14 ,  B82Y35/00 ,  C23C16/04 ,  G01Q70/16 ,  H01J9/025 ,  H01L21/30608 ,  H01J2201/30457 ,  Y10S977/878 ,  Y10S977/879 ,  Y10T428/12486 ,  Y10T428/12611 ,  Y10T428/24339 ,  Y10T428/24917

    Abstract: A microminiature tip and tip assembly is fabricated using microelectronic fabrication techniques. A masking aperture is formed in a dielectric layer which overlies a (100) silicon substrate. For a square aperture, a pyramidal pit is anisotropically etched into the surface of the silicon substrate. Tungsten is selectively deposited in the pit to form a pyramid-shaped microminiature point. Continued deposition of tungsten fills the aperture to form a base portion of the tip which integrally locks the tip to the dielectric layer, which is fabricated to form a support member for the tip.

    Abstract translation: 使用微电子制造技术制造微型尖端和尖端组件。 在覆盖（100）硅衬底的电介质层中形成掩蔽孔。 对于方孔，将金字塔形凹坑各向异性地蚀刻到硅衬底的表面中。 钨选择性地沉积在凹坑中以形成棱锥形的微型点。 钨的继续沉积填充孔以形成尖端的基部，该尖端的一部分将尖端一体地锁定到电介质层，该电介质层制造成形成用于尖端的支撑构件。

    Ultrasharp diamond edges and points and method of making
    386.
    发明授权
    Ultrasharp diamond edges and points and method of making 失效
    Ultrasharp金刚石边缘和点和制作方法

    公开(公告)号：US4084942A

    公开(公告)日：1978-04-18

    申请号：US608260

    申请日：1975-08-27

    Applicant: Humberto Fernandez-Moran Villalobos

    Inventor： Humberto Fernandez-Moran Villalobos

    IPC: B24D18/00 ,  B24D3/04 ,  B24D3/08

    CPC classification number: B82Y10/00 ,  B01J2203/061 ,  B01J2203/0655 ,  H01J2201/30457 ,  Y10S505/825 ,  Y10T83/929

    Abstract: Ultrasharp diamond edges and points which are usable as cutting instruments and as high intensity point sources for the emission of electrons, ions, x-rays, coherent and incoherent light and high frequency electromagnetic radiation are produced by preparing and classifying ultrafine diamond powder having a particle size of 10 to 100 angstroms placing the powder in a diamond mold defining the ultrasharp edge or point to be produced and applying a pressure of the order of 80 to 90 kb while heating the powder to a temperature of the order of 2440.degree. to 2500.degree. K in an ultrahigh vacuum or inert atmosphere after degasing to avoid oxidation of the diamond powder.

    Abstract translation: Ultrasharp金刚石边缘和可用作切割仪器的点和用于发射电子，离子，x射线，相干和非相干光和高频电磁辐射的高强度点源通过制备和分级具有颗粒的超细金刚石粉末 尺寸为10至100埃，将粉末放置在限定超薄边缘或待生产点的金刚石模具中，并施加大约80至90Kb的压力，同时将粉末加热至2440℃至2500℃的温度 K在超高真空或惰性气氛中脱气以避免金刚石粉末的氧化。

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