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    31.
    发明专利
    未知

    公开(公告)号：DE69823529T2

    公开(公告)日：2005-01-05

    申请号：DE69823529

    申请日：1998-03-24

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： DRUMM M

    IPC: G02B5/00 ,  G09F9/30 ,  H01J9/14 ,  H01J9/227 ,  H01J29/08 ,  H01J29/32 ,  H01J31/12

    Abstract: A multi-level conductive matrix structure for separating rows and columns of sub-pixels on the faceplate of a flat panel display device. In one embodiment, the present invention is formed partially of a first plurality of conductive ridges which are disposed on the faceplate between respective adjacent rows of sub-pixel regions. The present invention is further formed of a second plurality of conductive ridges which are orthogonally oriented with respect to and integral with the first plurality of conductive ridges such that a matrix structure is formed. In the conductive matrix of the present invention, the second plurality of conductive ridges have a height which is greater than the height of the first plurality of conductive ridges such that a multi-level conductive matrix is formed. However, the height of the second plurality of conductive ridges decreases to approximately the height of the first plurality of conductive ridges at respective intersections of the first and second plurality of conductive ridges. In so doing, the present invention provides a multi-level conductive matrix for separating rows and columns of sub-pixels on the faceplate of a flat panel display device.

    32.
    发明专利
    未知

    公开(公告)号：DE69726861T2

    公开(公告)日：2004-11-04

    申请号：DE69726861

    申请日：1997-06-05

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： HAVEN A ,  SLUZKY ESTHER ,  MACAULAY M

    IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02

    Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!

    33.
    发明专利
    未知

    公开(公告)号：DE69823529D1

    公开(公告)日：2004-06-03

    申请号：DE69823529

    申请日：1998-03-24

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： DRUMM M

    IPC: G02B5/00 ,  G09F9/30 ,  H01J9/14 ,  H01J9/227 ,  H01J29/08 ,  H01J29/32 ,  H01J31/12

    Abstract: A multi-level conductive matrix structure for separating rows and columns of sub-pixels on the faceplate of a flat panel display device. In one embodiment, the present invention is formed partially of a first plurality of conductive ridges which are disposed on the faceplate between respective adjacent rows of sub-pixel regions. The present invention is further formed of a second plurality of conductive ridges which are orthogonally oriented with respect to and integral with the first plurality of conductive ridges such that a matrix structure is formed. In the conductive matrix of the present invention, the second plurality of conductive ridges have a height which is greater than the height of the first plurality of conductive ridges such that a multi-level conductive matrix is formed. However, the height of the second plurality of conductive ridges decreases to approximately the height of the first plurality of conductive ridges at respective intersections of the first and second plurality of conductive ridges. In so doing, the present invention provides a multi-level conductive matrix for separating rows and columns of sub-pixels on the faceplate of a flat panel display device.

    37.
    发明专利
    未知

    公开(公告)号：DE69334065T2

    公开(公告)日：2007-04-19

    申请号：DE69334065

    申请日：1993-04-08

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： LOVOI A

    IPC: H01J29/70 ,  B26F1/26 ,  H01J3/02 ,  H01J9/14 ,  H01J9/18 ,  H01J17/49 ,  H01J29/02 ,  H01J29/08 ,  H01J29/24 ,  H01J29/46 ,  H01J31/12 ,  H01J61/30

    Abstract: A grid which controls electron flow, placed between a field emitter cathode and fluorescent anode in a flat cathode ray tube improves focusing, and reduces the switching voltage necessary to stop electron flow. The focusing capabilities of the grid enable increased distance between the cathode and anode, permitting higher anode voltage and use of more efficient phosphors. With the grid, electron flow on/off addressing can be done with drivers operating at less than 30 V, thereby reducing capacitive power loss over prior art addressable arrays and permitting use of inexpensive CMOS control circuitry. The grid's switching capabilities enable the use of a simplified field emitter cathode structure with resistive gate films which increase emitter reliability, emitter life, and, for cathode ray tube displays, the uniformity of the display.

    39.
    发明专利
    未知

    公开(公告)号：DE69827801T2

    公开(公告)日：2005-11-03

    申请号：DE69827801

    申请日：1998-02-10

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： PORTER D ,  CHAKAROVA S ,  KNALL JOHAN ,  SPINDT J

    IPC: C25F3/02 ,  B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  C25D5/48 ,  B23H3/00 ,  H01J1/02 ,  H01J1/62 ,  B44C1/22

    Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.

    40.
    发明专利
    未知

    公开(公告)号：DE69726861D1

    公开(公告)日：2004-01-29

    申请号：DE69726861

    申请日：1997-06-05

    Applicant: CANDESCENT INTELLECTUAL PROP

    Inventor： HAVEN A ,  SLUZKY ESTHER ,  MACAULAY M

    IPC: C25D13/02 ,  C25D13/12 ,  H01J9/02

    Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.\!

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