公开(公告)号：US3701050A

公开(公告)日：1972-10-24

申请号：US3701050D

申请日：1971-04-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MIZUNO HIROYUKI ,  NAKASHIMA SHINICHI ,  MIYAI YUKIO

IPC: H01L29/00 ,  H03B9/12 ,  H03B7/06

CPC classification number: H03B9/12 ,  H01L29/00

Abstract: The present invention provides a device for producing microwave oscillations which generally comprises a solid state oscillating element and a cavity resonator, said element comprising a semiconductor substrate with a metal layer thereon and a rectifying junction formed therebetween. An electric potential is impressed on the depletion layer of the rectifying junction in the backward direction, thus producing microwave oscillations.

Abstract translation: 本发明提供了一种用于产生微波振荡的装置，其通常包括固态振荡元件和空腔谐振器，所述元件包括其上具有金属层的半导体衬底和形成在其间的整流结。 整流结的消耗层向后方施加电位，产生微波振荡。

公开(公告)号：US3675161A

公开(公告)日：1972-07-04

申请号：US3675161D

申请日：1969-10-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TERAMOTO IWAO ,  IWASA HITOO ,  MIYAI YUKIO ,  TAKESHIMA MASUMI

IPC: H01L29/864 ,  H03B9/14 ,  H03C3/22

CPC classification number: H03B9/141 ,  H01L29/864 ,  H03C3/22

Abstract: A solid state microwave generating device comprising a 3terminal element having a p-n junction representing a negative resistance and a junction of which the junction capacitance is varied according to a voltage applied thereto. A reverse voltage is imparted to said p-n junction so that the latter is maintained in a negative resistance condition resulting from an avalanche current. The other junction is set to a suitable reactance value so as to produce a microwave of a tuned wavelength, and under such a condition a modulating signal is supplied in superimposition to said other junction to thereby change the reactance value thereof, thus effecting microwave modulation. With this device, the oscillation wave occurring in a resonator circuit is controlled in accordance with lumped constants so that the tuning operation of the resonant circuit, modulation (FM), automatic frequency control (AFC) and so forth can be easily and efficiently performed.

Abstract translation: 一种固态微波发生装置，包括具有代表负电阻的p-n结的3端元件和结电容根据施加到其上的电压而变化的结。 向所述p-n结施加反向电压，使得后者被维持在由雪崩电流引起的负电阻状态。 另一个接点被设置为合适的电抗值，以便产生调谐波长的微波，并且在这种条件下，调制信号被叠加到所述另一个结，从而改变其电抗值，从而进行微波调制。 利用该装置，根据集总常数来控制在谐振电路中发生的振荡波，从而可以容易且有效地执行谐振电路，调制（FM），自动频率控制（AFC）等的调谐操作。

公开(公告)号：US3675091A

公开(公告)日：1972-07-04

申请号：US3675091D

申请日：1970-05-21

Applicant: MATSUSHITA ELECTRONICS CORP ,  MATSUSHITA ELECTRIC IND CO LTD

Inventor： NAOMOTO SUSUMU ,  KANEKO TADATAKA ,  ESAKI HIDEYA

IPC: H01L29/73 ,  H01L21/331 ,  H01L23/485 ,  H01L29/00 ,  H01L5/06

CPC classification number: H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A planar p-n junction semiconductor device, wherein an electrode surrounding a p-n junction is provided on a protective film covering the surface of a higher resistivity region of two regions of different conductivity types which form a p-n junction, another electrode is provided in a lower resistivity region in ohmic contact therewith, said two electrodes being electrically connected, and the space charge region is extended and the breakdown voltage of the p-n junction is enhanced when a reverse bias is applied to the p-n junction.

Abstract translation: 平面pn结半导体器件，其中围绕pn结的电极设置在覆盖形成pn结的不同导电类型的两个区域的较高电阻率区域的表面的保护膜上，另一电极设置在较低电阻率区域 所述两个电极电连接，并且当向pn结施加反向偏压时，空间电荷区域延伸并且pn结的击穿电压增强。

公开(公告)号：US3660708A

公开(公告)日：1972-05-02

申请号：US3660708D

申请日：1970-03-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKAMURA HIROTO ,  DOI KEN-ICHI ,  SATO AKIRA ,  SUZIKI YUSHIN

IPC: H01J29/07 ,  H01J29/06 ,  H01J29/02 ,  H01J31/20

CPC classification number: H01J29/073

Abstract: In a shadow mask support means comprising a bi-metal piece having one end secured to a shadow mask frame with the other end left free, and a leaf spring secured at one end to said free end of the bi-metal piece and extending therefrom toward a pin provided on a side wall of a face panel, the improvement residing in that a metallic plate portion disposed between said frame and said spring is so arranged that it is displaced due to thermal deflection of the bi-metal at the end adjacent to said pin by an amount smaller than the displacement at the opposite end.

Abstract translation: 在荫罩支撑装置中，包括一个双金属件，其一端固定在荫罩框架上，另一端是自由的;以及一个板簧，其一端固定在双金属片的所述自由端上并从其向着 设置在面板的侧壁上的销，其改进在于设置在所述框架和所述弹簧之间的金属板部分布置成使得其由于在与所述框架和所述弹簧相邻的端部处的双金属的热偏转而移位 销的量小于相对端的位移量。

公开(公告)号：US3614548A

公开(公告)日：1971-10-19

申请号：US3614548D

申请日：1970-06-11

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE MORIO

IPC: H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  H01L3/00

CPC classification number: H01L23/291 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A surface protective layer or surface insulating layer of a composite oxide which is formed of silicon dioxide (SiO2) to which is added with less than 0.02 percent by weight of titanium dioxide (TiO2) stabilizes and improves the characteristics of the semiconductor device of a single layer formed of silicon oxide. The above-mentioned semiconductor device is provided by mixing small amount of gaseous organic compounds of titanium such as triisopropyl titanate with a gaseous organic compound of silicon such as tetraethoxysilane and leading the resultant gaseous mixture onto a predetermined semiconductor substrate which is heated and held at a temperature of from 300* to 500* C. to react therewith.

公开(公告)号：US3609412A

公开(公告)日：1971-09-28

申请号：US3609412D

申请日：1969-09-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUMURA TOMISABURO

IPC: H01L27/088 ,  H03D7/12 ,  H01L19/00

CPC classification number: H03D7/125 ,  H01L27/088

Abstract: An integrated circuit element comprising two insulated-gate field-effect transistors connected in parallel and another insulated-gate field-effect transistor connected in cascade thereto, which works stably as a converter, e.g. a local oscillator or a frequency converter element in a radio or television receiver and which can be easily designed because few outgoing electrode lead wires are necessary for integration.

公开(公告)号：US3588588A

公开(公告)日：1971-06-28

申请号：US3588588D

申请日：1969-06-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NUMATA TSUNEO

IPC: H01J23/00 ,  H01J23/10 ,  H01J25/50

CPC classification number: H01J23/10 ,  H01J23/005

Abstract: A MAGNETRON DEVICE IN WHICH AN UPPER INSULATOR VESSEL INCLUDING THEREIN CATHODE LEAD MEMBERS EXTENDING FROM A CATHODE CONTAINED, TOGETHER WITH AN ANODE, A CAVITY RESONATOR AND MAGNETIC POLE PIECES, IN A METAL VESSEL IS DISPOSED IN AN AXIAL HOLE IN A CYLINDRICAL OR CONICAL PERMANENT MAGNET FOR EXCITING A MAGNETRON WITH AN INTERSTICE THEREBETWEEN TO DEFINE A VENTILATION FLUE FOR EFFECTIVELY COOLING THE UPPER INSULATOR VESSEL AND THE PERMANENT MAGNET TO PREVENT THE INSULATOR VESSEL FROM BREAKAGE DUE TO UNEVEN HEATING OF THE INSULATOR VESSEL BY MAKING THE DISTRIBUTION OF THE TEMPERATURE OF THE INSULATOR VESSEL EVEN.

公开(公告)号：US3584254A

公开(公告)日：1971-06-08

申请号：US3584254D

申请日：1968-09-10

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KONISHI KENICHI

IPC: E21D1/14 ,  H01K1/50

CPC classification number: H01K1/50 ,  E21D1/14 ,  Y02B20/12

Abstract: A halogen bulb having a tungsten filament and containing a reactive carrier gas mixture including halogen, as well as an inert gas in a transparent envelope to repeatedly regenerate tungsten evaporated from the filament during operation. Improvement lies in using hydrogen bromide and ammonium bromide as the reactive carrier gas mixture, thereby providing a bulb of high efficiency, and uniformly long service life.

公开(公告)号：US3575632A

公开(公告)日：1971-04-20

申请号：US3575632D

申请日：1968-09-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KATO YOSHIO ,  ISHIDA YASUO

IPC: H01J19/36 ,  H01J23/00 ,  H01J7/26 ,  H05B9/06

CPC classification number: H01J23/005 ,  H01J19/36 ,  H01J2893/0027

Abstract: A magnetron device composed by improving the medium or large size magnetron device having an output power of the order of 500 watts in ultrahigh frequency, which comprises as cooling means an assembly of a natural air-cooled type radiator formed of aluminum or alloy thereof and which, accordingly, does not necessitate the cooling means like blowers provided to conventional devices. Said device has such advantages that noise is eliminated during operation and that it is light and compact and therefore it is particularly suitable for a domestic-use microwave range.

公开(公告)号：US3541020A

公开(公告)日：1970-11-17

申请号：US3541020D

申请日：1966-03-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MIZUNO HIDEO

IPC: C09K11/76 ,  C09K11/77 ,  C09K1/36

CPC classification number: C09K11/7753 ,  C09K11/76