公开(公告)号：AU6781294A

公开(公告)日：1994-11-21

申请号：AU6781294

申请日：1994-05-03

Applicant: RADIANT TECHNOLOGIES INC

Inventor： BULLINGTON JEFF ALLEN ,  EVANS JOSEPH TATE JR ,  MONTROSS CARL ELIJAH JR

IPC: H04N5/33 ,  G01J5/34

Abstract: The sensing array detects an image by measuring the changes in the dielectric constant of individual capacitors in a rectangular array of capacitors. The present invention avoids the use of isolation transistors to eliminate the effects of other capacitors in the array when measuring the capacitance of a given capacitor in the array. During the measurement of any given capacitor in the array, the present invention maintains a zero potential difference across the capacitors that are not being measured, thereby eliminating any interference that might be caused by these capacitors.

公开(公告)号：AU2260797A

公开(公告)日：1997-10-10

申请号：AU2260797

申请日：1997-02-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH T JR ,  BOYER LEONARD O

IPC: H01L21/02 ,  H01L27/115 ,  H01L21/70

公开(公告)号：CA2129838A1

公开(公告)日：1993-09-16

申请号：CA2129838

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH T JR ,  BULLINGTO JEFF A ,  MONTROSS CARL E JR ,  BULLINGTON JEFF A

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.

公开(公告)号：AU9032691A

公开(公告)日：1992-05-26

申请号：AU9032691

申请日：1991-10-09

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN

IPC: G02F1/29 ,  G02F3/00 ,  G02F3/02 ,  G02F1/03 ,  G02F1/035

Abstract: A light activated AND gate is disclosed which generates a light signal at a first output port in response to the simultaneous presence of light signals at an input port and a control port. With a light signal present at the control port, a light beam at the input port is reflected from an interface between two regions having different indices of refraction, and the reflected light beam then exits through a first output port. In the absence of a light signal at the control port, the two regions of the switching device have the same index of refraction, and the light beam at the input port passes through both regions and exits through a second output port.

公开(公告)号：AU7985391A

公开(公告)日：1991-12-10

申请号：AU7985391

申请日：1991-05-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN

IPC: G02F1/01 ,  G02B6/35 ,  G02F1/29 ,  G02F1/313 ,  G02B5/23

Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.

公开(公告)号：WO2012074776A3

公开(公告)日：2012-12-13

申请号：PCT/US2011061266

申请日：2011-11-17

Applicant: RADIANT TECHNOLOGIES INC ,  EVANS JOSEPH T ,  WARD CALVIN B

Inventor： EVANS JOSEPH T ,  WARD CALVIN B

IPC: G11C11/22

CPC classification number: G11C11/221 ,  G11C11/2259 ,  G11C11/2273 ,  G11C11/2275 ,  G11C11/2293 ,  G11C11/5657 ,  G11C27/005

Abstract: A ferroelectric memory having a plurality of ferroelectric memory cells, each ferroelectric memory cell including a ferroelectric capacitor is disclosed. The ferroelectric memory includes read and write lines and a plurality of ferroelectric memory cell select buses, one select bus corresponding to each of the ferroelectric memory cells. Each of the ferroelectric memory cells includes first and second gates for connecting the ferroelectric memory cell to the read line and the write line, respectively, in response to signals on the ferroelectric memory cell select bus corresponding to that ferroelectric memory cell. A write circuit causes a charge to be stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the write line, the charge having a value determined by a data value having at least three states. A read circuit measures the charge stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the read line to generate an output value, the output value corresponding to one of the states.

Abstract translation: 公开了一种具有多个铁电存储器单元的铁电存储器，每个铁电存储器单元包括一个铁电电容器。 铁电存储器包括读和写线以及多个铁电存储单元选择总线，一个选择总线对应于每个铁电存储单元。 每个铁电存储单元包括第一和第二栅极，用于响应与该铁电存储单元对应的铁电存储单元选择总线上的信号，分别将铁电存储单元连接到读出线和写入线。 写入电路使得电荷存储在当前连接到写入线的铁电存储器单元的铁电电容器中，该电荷具有由具有至少三个状态的数据值确定的值。 读电路测量存储在当前连接到读线的铁电存储单元的铁电电容器中的电荷，以产生输出值，输出值对应于其中一个状态。

公开(公告)号：WO2007026995A1

公开(公告)日：2007-03-08

申请号：PCT/KR2006/002321

申请日：2006-06-16

Applicant: RADIANT TECHNOLOGIES, INC. ,  KIM, Tae Il ,  HA, Tae Joon ,  KIM, Sung Hee ,  SOHN, Hyuk Jin ,  LEE, Won Seok

Inventor： KIM, Tae Il ,  HA, Tae Joon ,  KIM, Sung Hee ,  SOHN, Hyuk Jin ,  LEE, Won Seok

IPC: H04B7/26

CPC classification number: H04W64/00 ,  G01S5/02 ,  G01S5/0226 ,  G01S5/0273 ,  H04B7/2606

Abstract: A method of determining a location of a mobile communication terminal, including: receiving base station signal information from the mobile communication terminal, the base station signal information being transmitted from a plurality of base stations including a reference base station to the mobile communication terminal; selecting neighboring base stations, which are located within a predetermined distance from the reference base station, from base stations corresponding to the base station signal information by searching a network database; determining whether the base station signal information corresponding to the neighboring base stations and the reference base station is received via a repeater; determining a vector proceeding order with respect to the reference base station and the neighboring base stations; setting a vector proceeding point, depending upon the determination on whether the base station signal information corresponding to the neighboring base stations and the reference base station is received via the repeater; setting a location mode of the mobile communication terminal according to a domination degree of the reference base station with respect to the mobile communication terminal; determining the location of the mobile communication terminal by determining a vector-based location with respect to the vector proceeding point according to the vector proceeding order, using a PN strength of the base station signal information according to the location mode.

Abstract translation: 一种确定移动通信终端的位置的方法，包括：从移动通信终端接收基站信号信息，从包括参考基站的多个基站向移动通信终端发送的基站信号信息; 通过搜索网络数据库，选择位于距参考基站预定距离内的相邻基站与对应于基站信号信息的基站; 确定经由中继器是否接收到与所述相邻基站和所述参考基站相对应的基站信号信息; 确定相对于参考基站和相邻基站的向量进程顺序; 根据是否经由中继器接收到对应于相邻基站和参考基站的基站信号的确定来设置向量进位点; 根据参考基站相对于移动通信终端的统治度，设置移动通信终端的位置模式; 通过使用根据所述位置模式的所述基站信号信息的PN强度，根据所述向量进行顺序确定相对于所述向量进位点的基于向量的位置来确定所述移动通信终端的位置。

公开(公告)号：WO2000058806A3

公开(公告)日：2000-10-05

申请号：PCT/US2000/008186

申请日：2000-03-27

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： EVANS, Joseph, T., Jr.

IPC: H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/51

Abstract: A ferroelectric memory cell (200) for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer (213) by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 °C. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). The memory also includes a hydrogen barrier layer (225) that inhibits the flow of oxygen to the top and bottom electrodes when the memory cell is placed in a gaseous environment containing hydrogen. In one embodiment of the invention, a hydrogen absorbing layer is included. In the preferred embodiment of the present invention, the hydrogen barrier layer (225) is constructed from a material that will also bind hydrogen ions.

公开(公告)号：WO1997027631A1

公开(公告)日：1997-07-31

申请号：PCT/US1997000863

申请日：1997-01-21

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, T., Jr. ,  WOMACK, Richard

IPC: H01L29/68

CPC classification number: H01L27/11502 ,  G11C11/22 ,  G11C11/5657

Abstract: A high density non volatile ferroelectric-based memory (500) based on ferroelectric FET operated in a two terminal write mode. Storage words may be constructed either from one or two bit storage cells based on a ferroelectric FET (10). A memory using either the one or two bit storage cells includes a plurality of word storage cells (502) organized into a rectangular array including a plurality of columns and rows. Each of the single bit memory cells (101) includes a pass transistor (115) and a ferroelectric storage element (116). All of the gates of the ferroelectric storage elements transistors are connected to a common gate electrode (122), and all of the source electrodes are connected to a common source electrode (121). If the memory is built as a two bit storage cell (300), all of the common source electrodes in each of the columns are connected electrically to a column electrode (504) corresponding to that column and all of the pass gates in each of the rows that are connected electrically to a row electrode (503) corresponding to that row.

Abstract translation: 基于以两端写入模式操作的铁电FET的高密度非挥发性铁电存储器（500）。 存储字可以由基于铁电FET（10）的一个或两个位存储单元构成。 使用一个或两个位存储单元的存储器包括组织成包括多个列和行的矩形阵列的多个字存储单元（502）。 单个位存储单元（101）中的每一个包括通过晶体管（115）和铁电存储元件（116）。 铁电存储元件晶体管的所有栅极连接到公共栅电极（122），并且所有源电极连接到公共源电极（121）。 如果存储器被构建为两位存储单元（300），则每个列中的所有公共源电极电连接到对应于该列的列电极（504），并且在每个列中的所有通孔 与行对应的行电极（503）电连接的行。

公开(公告)号：WO1996029742A1

公开(公告)日：1996-09-26

申请号：PCT/US1996003128

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, Tate, Jr. ,  WARREN, William, L. ,  TUTTLE, Bruce, A.

IPC: H01L29/78

CPC classification number: H01L29/516 ,  G11C11/223

Abstract: An improved ferroelectric FET structure (10) in which the ferroelectric layer (14) is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer (16) having first and second contacts (18, 19) thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode (12) and a ferroelectric layer (14) which is sandwiched between the semiconductor layer (16) and the bottom electrode (12). The ferroelectric layer (14) is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentration between 1 % and 8 %.

Abstract translation: 改进的铁电FET结构（10），其中掺杂铁电层（14）以减少保留损耗。 根据本发明的铁电FET包括其上具有第一和第二触点（18,19）的半导体层（16），第一和第二触点彼此分离。 铁电FET还包括夹在半导体层（16）和底部电极（12）之间的底部电极（12）和铁电体层（14）。 铁电层（14）由化学组成ABO 3的钙钛矿结构构成，其中B位置包含第一和第二元素以及具有大于+4的氧化态足够浓度的掺杂剂元素，以阻止在 第一次和第二次接触时间。 铁电FET结构优选在A位置包含Pb。 第一和第二元素分别优选为Zr和Ti。 优选的B位掺杂剂是浓度在1％和8％之间的铌，钽和钨。