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    고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
    32.
    发明公开
    고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 无效
    具有高耐蚀喷涂膜的室内加工设备

    公开(公告)号：KR1020010062209A

    公开(公告)日：2001-07-07

    申请号：KR1020000074163

    申请日：2000-12-07

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오츠키하야시

    IPC: H01L21/205

    CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

    Abstract: PURPOSE: A processing apparatus with a chamber having therein a high-etching resistant sprayed film is provided to not occur the corrosion of the inner wall of a treatment vessel and provide a corrosion resistant member excellent in plasma resistance and corrosion gas resistance and used for the treatment system. CONSTITUTION: The processing apparatus includes a chamber(11) for holding a substrate(W) that is to be processed; a sprayed film(14) formed on an inner surface of the chamber(11) and containing a compound of a III-a element of the periodic table; and a processing mechanism(40) for processing a substrate held in the chamber(11). The sprayed film contains Al2O3, or Al2O3 and Y2O3, wherein the weight ratio of Al2O3 to Y2O3 is 0.5 or more in the sprayed film.

    Abstract translation: 目的：提供一种其中具有高耐蚀刻喷涂膜的室的处理装置，不会发生处理容器的内壁的腐蚀，并提供耐等离子体性和耐腐蚀气体性优异的耐腐蚀构件，并用于 治疗系统。 构成：处理装置包括用于保持待处理的基板（W）的室（11） 形成在所述室（11）的内表面上并含有周期表的III-a元素的化合物的喷涂膜（14） 以及用于处理保持在所述室（11）中的基板的处理机构（40）。 喷涂膜含有Al 2 O 3或Al 2 O 3和Y 2 O 3，其中Al 2 O 3与Y 2 O 3的重量比在喷涂膜中为0.5以上。

    반도체 및 액정 표시 장치용의 기판을 처리하는 처리 장치
    35.
    发明公开
    반도체 및 액정 표시 장치용의 기판을 처리하는 처리 장치 有权
    加工用于半导体和液晶显示器件的基板的处理装置

    公开(公告)号：KR1020090098780A

    公开(公告)日：2009-09-17

    申请号：KR1020090083063

    申请日：2009-09-03

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오츠키하야시

    IPC: H01L21/205 ,  H01L21/02

    CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

    Abstract: An apparatus for processing a substrate for a semiconductor and a liquid crystal display device is provided to prevent attachment of a product in a member received inside a chamber by diffusing a process gas having corrosion resistance and insulation property to a surface of a semiconductor wafer. A chamber(11) receives a substrate. A bell jar has a part of a spherical surface formed in a top direction of a cylindrical part. A gas discharge hole(61) supplies a process gas to an inner part of the chamber. An antenna forms an induction field inside the bell jar, and generates plasma of the process gas. A high frequency power source(66) supplies a high frequency power to the antenna. An exhaust pipe(62) is connected to an exhaust device which exhausts the inner part of the chamber.

    Abstract translation: 提供了一种用于处理半导体用基板的装置和液晶显示装置，用于通过将具有耐腐蚀性和绝缘性的工艺气体扩散到半导体晶片的表面来防止产品附着在容纳在室内的构件中。 腔室（11）接收衬底。 钟罩具有沿圆柱形部分的顶部方向形成的球形表面的一部分。 气体排出孔（61）将处理气体供给到室的内部。 天线在钟罩内形成感应场，产生工艺气体的等离子体。 高频电源（66）向天线提供高频电力。 排气管（62）连接到排出室的内部的排气装置。

    처리 장치
    36.
    发明授权
    처리 장치 有权
    处理设备

    公开(公告)号：KR100884165B1

    公开(公告)日：2009-02-17

    申请号：KR1020070081254

    申请日：2007-08-13

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오츠키하야시

    IPC: H01L21/205

    CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

    Abstract: 본 발명의 처리 장치는 반도체 웨이퍼를 수용하고, 가열, 플라즈마, 프로세스 가스 중 어느 하나, 또는 이들의 조합에 의해서 해당 피처리 기판에 가공을 실시하는 처리를 실시하기 위한 부재가 수납된 챔버를 탑재하는 장치에 있어서, 상기 챔버 내부 벽면 및 챔버내에 노출되는 상기 부재 표면에 Al
    2 O
    3 및 Y
    2 O
    3 로 이루어진 막이 형성되고, 고내식성 및 절연성을 가지고, 프로세스 가스를 반도체 웨이퍼의 처리면상에 도입 및 확산시킴으로써, 플라즈마를 발생시키는 영역이나 챔버내에 수납된 부재에 생성물이 부착되지 않도록 하는 처리 장치이다.

    Abstract translation: 本发明的处理装置包括用于容纳半导体晶片并且包含用于执行用于通过加热，等离子体和处理气体中的任一种来处理待处理基板的处理的构件或其组合 其中室内壁表面和暴露在室内的构件表面具有Al

    고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
    39.
    发明公开
    고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 有权
    加工设备与其具有高耐蚀喷涂膜的室

    公开(公告)号：KR1020080082588A

    公开(公告)日：2008-09-11

    申请号：KR1020080080544

    申请日：2008-08-18

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오츠키하야시

    IPC: H01L21/205 ,  H01L21/3065

    CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

    Abstract: A processing apparatus with a chamber having a high-etching resistant sprayed film is provided to prevent the corrosion of a chamber to increase the lifetime of the chamber by forming the sprayed film on an inner wall of the chamber. A chamber(11) has a susceptor unit(17) for receiving a target substrate. A member is installed in an upper direction of the chamber. An antenna is formed in the chamber to form a high frequency electromagnetic field. A high frequency power(66) supplies high frequency to the antenna. A gas supply unit is arranged in the upper direction of the chamber. Process gas is supplied to the gas supply unit from gas discharge holes(30a,30b,30c) being formed along an inner circumference. An exhaust unit exhausts gas from the chamber. A layer(14) processes the target substrate by the plasma formed in the chamber. The layer is formed on a member surface exposed in the chamber by using Al2O3 and Y2O3 powder at the same time.

    Abstract translation: 提供一种具有高耐蚀刻喷涂膜的室的处理装置，以通过在室的内壁上形成喷涂膜来防止室的腐蚀，从而增加室的寿命。 室（11）具有用于接收目标衬底的基座单元（17）。 构件安装在腔室的上方。 在室中形成天线以形成高频电磁场。 高频功率（66）为天线提供高频。 气体供应单元布置在腔室的上方。 从沿着内周形成的气体排出孔（30a，30b，30c）向气体供给部供给处理气体。 排气单元从腔室排出气体。 层（14）通过在室中形成的等离子体来处理目标衬底。 该层通过同时使用Al2O3和Y2O3粉末在室内暴露的构件表面上形成。

    반도체 및 액정 표시 장치용의 기판을 처리하는 처리 장치에 사용되는 내식성 부재 및 그 제조방법
    40.
    发明公开
    반도체 및 액정 표시 장치용의 기판을 처리하는 처리 장치에 사용되는 내식성 부재 및 그 제조방법 有权
    耐蚀性成员和生产抗蚀剂成员的方法

    公开(公告)号：KR1020080075071A

    公开(公告)日：2008-08-14

    申请号：KR1020080071397

    申请日：2008-07-22

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 오츠키하야시

    IPC: H01L21/205

    CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

    Abstract: A corrosion resistant member and a method for manufacturing the corrosion resistant member resistant member are provided to extend a lifetime of a chamber by preventing the chamber from being eroded due to plasma or a cleaning gas. A film forming apparatus(10) includes a chamber(11) having a lower chamber(11a) and an upper chamber(11b), which are integrated with each other. The upper chamber has a smaller diameter than the lower chamber. The lower chamber is made of a conductor(12), whose surface is anode-oxidized. The upper chamber includes a base film(13) and a sprayed film(14). The base film is made of a ceramic. The base film contains a 3A-group chemical in a periodic table and is formed on an inner wall of the upper chamber. The sprayed film is made of Al2O3 and Y2O3. An Al2O3/Y2O3 ratio of the sprayed film lies between 0.5 and 2.5.

    Abstract translation: 提供耐腐蚀构件和制造耐腐蚀构件的构件的方法，以通过防止室被等离子体或清洁气体侵蚀而延长室的寿命。 一种成膜设备（10）包括具有彼此成一体的下室（11a）和上室（11b）的室（11）。 上室的直径小于下室。 下室由导体（12）制成，其表面被阳极氧化。 上室包括基膜（13）和喷涂膜（14）。 基膜由陶瓷制成。 基膜在周期表中含有3A族化学物质，形成在上部室的内壁上。 喷涂膜由Al2O3和Y2O3制成。 喷涂膜的Al2O3 / Y2O3比例在0.5和2.5之间。

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