中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

59 records (took 0.033 seconds)

    처리 장치 및 히터 유닛
    4.
    发明公开
    처리 장치 및 히터 유닛 失效
    处理装置和加热器单元

    公开(公告)号：KR1020080006020A

    公开(公告)日：2008-01-15

    申请号：KR1020077029479

    申请日：2005-07-01

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 무라카미세이시 ,  다다구니히로

    IPC: C23C16/46 ,  C23C16/00

    CPC classification number: C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

    Abstract: A treating device and a heater unit. The treating device comprises a loading table formed so that cracking does not occur therein due to the heating of heaters buried therein. The loading table (32A) for placing a wafer (W) thereon further comprises a plurality of areas (32Aa) and (32Ab), and one of the plurality of heaters is buried in each of the plurality of areas independently of each other. The heater (35Aa) buried in one area (32Aa) of the areas adjacent to each other comprises a portion (35Aa2) extending into the other area (32Ab), and the heater (35Ab) buried in the other area (32Ab) of the areas adjacent to each other comprises a portion (35Ab2) extending into one area (32Aa).

    Abstract translation: 处理装置和加热器单元。 处理装置包括装载台，其形成为使得由于其中埋入的加热器的加热不会在其中发生裂纹。 用于将晶片（W）放置在其上的装载台（32A）还包括多个区域（32Aa）和（32Ab），并且所述多个加热器中的一个加热器彼此独立地埋设在所述多个区域中的每一个中。 掩埋在彼此相邻的区域的一个区域（32Aa）中的加热器（35Aa）包括延伸到另一区域（32Ab）中的部分（35Aa2）和埋在另一区域（32Ab）中的加热器 彼此相邻的区域包括延伸到一个区域（32Aa）中的部分（35Ab2）。

    기판 처리 방법 및 기판 처리 장치
    5.
    发明公开
    기판 처리 방법 및 기판 처리 장치 失效
    基板加工方法和基板加工装置

    公开(公告)号：KR1020070090957A

    公开(公告)日：2007-09-06

    申请号：KR1020077014619

    申请日：2006-04-04

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다다구니히로 ,  미야시타히로유키 ,  군지이사오

    IPC: H01L21/02

    CPC classification number: C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

    Abstract: Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

    Abstract translation: 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

    Ｔｉ계 막의 성막 방법 및 기억 매체
    6.
    发明公开
    Ｔｉ계 막의 성막 방법 및 기억 매체 有权
    TI系统膜和储存介质的制造方法

    公开(公告)号：KR1020070088386A

    公开(公告)日：2007-08-29

    申请号：KR1020070018558

    申请日：2007-02-23

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  다다구니히로

    IPC: H01L21/205 ,  H01L21/3205

    CPC classification number: C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

    Abstract: A method for forming a Ti based film is provided to prevent the reaction between Ni and Ti in a gas spray member by using improved film forming conditions. A Ti based film is formed on a wafer in first a predetermined temperature range of a gas spray member in a TiCl4 gas pressure range of 0.1 to 2.5 Pa, wherein the wafer is arranged in a chamber The first predetermined temperature range of the gas spray member is 300 to 450 °C. The flow rate of a TiCl4 gas in the Ti based film forming process is in a range of 1 to 12 mL/min(sccm). A cleaning process is performed on an inner space of the chamber by using a fluorine based cleaning gas in a second predetermined temperature range of the gas spray member. The second predetermined temperature range of the gas spray member is 200 to 300 °C.

    Abstract translation: 提供了一种用于形成Ti基膜的方法，以通过改进的成膜条件来防止气体喷涂部件中的Ni和Ti之间的反应。 首先在TiCl4气体压力范围为0.1〜2.5Pa的气体喷射构件的预定温度范围内在晶片上形成Ti基膜，其中晶片布置在腔室中。气体喷射构件的第一预定温度范围 为300〜450℃。 Ti基成膜工艺中TiCl 4气体的流量为1〜12mL / min（sccm）。 通过在气体喷射构件的第二预定温度范围内使用氟基清洁气体在室的内部空间上进​​行清洁处理。 气体喷射构件的第二预定温度范围为200至300℃。

    질화티타늄막의 성막
    7.
    发明公开
    질화티타늄막의 성막 失效
    硝酸钛膜的沉积

    公开(公告)号：KR1020060107818A

    公开(公告)日：2006-10-16

    申请号：KR1020067012635

    申请日：2004-12-27

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 무라카미세이시 ,  다다구니히로

    IPC: C23C16/34

    CPC classification number: H01L21/76846 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/7687 ,  H01L2221/1078

    Abstract: A method of depositing a titanium nitride film on a substrate by reacting titanium tetrachloride with ammonia, the method being less apt to cause the corrosion of the underlying layer. Titanium tetrachloride is reacted with ammonia in a region where the rate of film deposition is determined by the feeding. Thus, a first titanium nitride layer is formed on a substrate while minimizing the corrosion of the underlying layer. Subsequently, titanium tetrachloride is reacted with ammonia in a region where the rate of film deposition is determined by the reaction. Thus, a second titanium nitride layer is formed on the first titanium nitride layer while securing satisfactory step coverage.

    Abstract translation: 一种通过使四氯化钛与氨反应而在基板上沉积氮化钛膜的方法，该方法不容易引起下层腐蚀。 在通过进料确定膜沉积速率的区域中，使四氯化钛与氨反应。 因此，在基板上形成第一氮化钛层，同时最小化下层的腐蚀。 随后，在通过反应确定膜沉积速率的区域中，使四氯化钛与氨反应。 因此，在确保令人满意的台阶覆盖的同时，在第一氮化钛层上形成第二氮化钛层。

    플라즈마 ＣＶＤ를 이용한 성막 방법 및 장치
    8.
    发明公开
    플라즈마 ＣＶＤ를 이용한 성막 방법 및 장치 有权
    成膜方法和使用等离子体CVD的装置

    公开(公告)号：KR1020060091006A

    公开(公告)日：2006-08-17

    申请号：KR1020067014884

    申请日：2003-12-04

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다다구니히로 ,  요코이히로아키 ,  와카바야시사토시 ,  나루시마겐사쿠

    IPC: C23C16/455 ,  H01L21/205

    CPC classification number: C23C16/45523 ,  C23C16/4408 ,  C23C16/50 ,  H01L21/28562

    Abstract: A film-forming method wherein a certain thin film is formed on a substrate to be processed (W) using plasma CVD comprises first and second steps performed alternately at least once. In the first step, a first plasma is generated in a process chamber (51) in which the substrate (W) is housed while supplying a compound gas containing a component for the thin film and a reducing gas into the process chamber (51). In the second step following the first step, a second plasma is generated in the process chamber (51) while supplying the reducing gas into the process chamber (51).

    Abstract translation: 使用等离子体CVD在被处理基板（W）上形成某个薄膜的成膜方法包括交替进行至少一次的第一和第二工序。 在第一步骤中，在容纳基板（W）的处理室（51）中产生第一等离子体，同时向处理室（51）提供含有薄膜成分的复合气体和还原气体。 在第一步骤之后的第二步骤中，在处理室（51）中产生第二等离子体，同时将还原气体供应到处理室（51）中。

    Ｔｉ계 막의 성막 방법 및 기억 매체
    9.
    发明授权
    Ｔｉ계 막의 성막 방법 및 기억 매체 有权
    Ti계막의성막방법및기억매체

    公开(公告)号：KR100934511B1

    公开(公告)日：2009-12-29

    申请号：KR1020070018558

    申请日：2007-02-23

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  다다구니히로

    IPC: H01L21/205 ,  H01L21/3205

    CPC classification number: C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

    Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

    Abstract translation: 在设置于腔室31内的晶片W的表面上，至少在表面上从含Ni材料的喷头40向腔室31内喷射包含TiCl 4气体的处理气体，同时形成Ti膜。 该方法包括在预定数量的晶片W上形成Ti膜，同时将喷头40设置在300℃的温度下; C.或多于并少于450℃; 以1〜12mL / min（sccm）的流量设置TiCl 4气体，或者以0.1〜2.5Pa的分压设定TiCl 4气体，一边设置喷头40一边在腔室31内进行清洗 在200至300℃的温度下， 并且将ClF 3气体供应到腔室31中。

Patent Agency Ranking