公开(公告)号：KR1020090129948A

公开(公告)日：2009-12-17

申请号：KR1020090051391

申请日：2009-06-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 우에다히로카즈 ,  다나카요시노부 ,  오츠카야스히로 ,  나카하시마사노부

IPC: H01L21/205 ,  H01L21/3065 ,  H01L21/02

CPC classification number: C23C16/4558

Abstract: PURPOSE: A gas ring, an apparatus for processing a semiconductor substrate, and a method of processing the semiconductor substrate are provided to form the amount of gas and liquid injected from each gas nozzle by keeping a distance between each nozzle and each branch point constant. CONSTITUTION: In a device, a gas ring(11) has a hook shape. Gas induction holes(12a,12b) introduce the gas from the outside to inside the gas ring. A plurality of gas outlets(18a-18h) inject the gas introduced from a gas induction hole. A plurality of branch lines are expanded along a hook shape to the gas outlet from the gas inlet. The distance from the gas inlets to a branch points are same. The gas ring has a round hook shape. A plurality of gas inlets are formed to be equimultiple. A resistance member of flow passage is same from each gas outlet to the branch point.

Abstract translation: 目的：提供一种气体环，半导体衬底的处理装置和半导体衬底的处理方法，以通过保持每个喷嘴与每个分支点之间的距离恒定来形成从每个气体喷嘴喷射的气体和液体的量。 构成：在装置中，气环（11）具有钩形。 气体导入孔（12a，12b）将气体从外部引入气体环内。 多个气体出口（18a-18h）注入从气体导入孔引入的气体。 多个分支线沿着钩形状从气体入口膨胀到气体出口。 从气体入口到分支点的距离是相同的。 气环具有圆形钩形状。 多个气体入口形成为等于多个。 流动通道的阻力构件从每个气体出口到分支点相同。

公开(公告)号：KR1020090010972A

公开(公告)日：2009-01-30

申请号：KR1020087027056

申请日：2007-10-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 우에다히로카즈 ,  노자와토시히사

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L21/2855 ,  H01L21/76843 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Disclosed is a method for forming a thin film, which is characterized by comprising a prevention film-forming step wherein a charging damage prevention film for preventing charging damage is formed by sputtering on the surface of an object to be processed, and a thin film-forming step wherein a desired thin film is formed by sputtering on the surface of the charging damage prevention film which is formed on the object to be processed.

Abstract translation: 公开了一种形成薄膜的方法，其特征在于包括防止膜形成步骤，其中通过溅射在被处理物体的表面上形成用于防止充电损伤的充电损坏防止膜，以及薄膜形成步骤， 形成步骤，其中通过溅射形成所需的薄膜，所述薄膜通过形成在待处理对象上的充电损伤防止膜的表面上而形成。