公开(公告)号：KR1020100078860A

公开(公告)日：2010-07-08

申请号：KR1020080137239

申请日：2008-12-30

Applicant: 삼성모바일디스플레이주식회사

Inventor： 박병건 ,  이동현 ,  이길원 ,  양태훈 ,  서진욱 ,  이기용 ,  안지수 ,  리사첸코,막심

IPC: H01L29/786 ,  H01L51/50 ,  H05B33/02

CPC classification number: H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696 ,  H01L21/02304 ,  H01L21/32055

Abstract: PURPOSE: A manufacturing method of a poly-crystal silicon, a thin layer transistor, a manufacturing method thereof, and an organic electronic light emitting display device are provided to implement a thin layer transistor with improved a threshold voltage by controlling the concentration of the metallic catalyst of a semiconductor layer. CONSTITUTION: A buffer layer(110) is formed on a substrate(100). A first semiconductor layer(160) and a second semiconductor layer(170) are formed on the buffer layer. A gate electrode(185) is insulated from the first semiconductor layer and the second semiconductor layer. A gate insulating layer(180) insulates the semiconductor layer and the second semiconductor layer from the gate electrode. Source/drain electrode is connected to a part of the second semiconductor layer.

Abstract translation: 目的：提供多晶硅制造方法，薄膜晶体管，其制造方法和有机电子发光显示装置，通过控制金属的浓度来实现阈值电压提高的薄层晶体管 半导体层的催化剂。 构成：在衬底（100）上形成缓冲层（110）。 在缓冲层上形成第一半导体层（160）和第二半导体层（170）。 栅电极（185）与第一半导体层和第二半导体层绝缘。 栅极绝缘层（180）使半导体层和第二半导体层与栅电极绝缘。 源极/漏极连接到第二半导体层的一部分。