公开(公告)号：KR100891826B1

公开(公告)日：2009-04-07

申请号：KR1020070003705

申请日：2007-01-12

Applicant: 삼성전기주식회사

Inventor： 김민호 ,  박길한 ,  코이케마사요시

IPC: H01L33/02 ,  H01L33/44

Abstract: 본 발명은 반도체 발광소자에 관한 것이며, 본 발명은, 서로 대향하는 제1 및 제2 주면을 갖는 투광성 기판과, 상기 투광성 기판의 제1 주면 상에 형성된 제1 도전형 반도체층과, 상기 제1 도전형 반도체층 상에 형성된 활성층과, 상기 활성층 상에 형성된 제2 도전형 반도체층 및 상기 투광성 기판의 제2 주면에 형성되며, 상기 활성층으로부터 방출되는 광을 흡수하여 다른 파장의 광으로 변환하기 위한 에너지 밴드갭을 갖는 반도체 물질로 이루어진 색변환층을 포함하는 반도체 발광소자를 제공한다. 본 발명에 따르면, 형광체를 사용하지 않으면서도 높은 발광효율을 얻을 수 있는 동시에 연색지수가 향상된 백색광을 발광할 수 있는 반도체 발광소자를 얻을 수 있다.
반도체 발광소자, 백색발광, 색변환, LED

Abstract translation: 本发明提供一种半导体发光器件，其包括具有彼此面对的第一和第二主面的光透射基板，形成在光透射基板的第一主表面上的第一导电类型半导体层， 形成在有源层上的第二导电类型半导体层和形成在透明衬底的第二主表面上的第二导电类型半导体层，用于将从有源层发射的光转换为具有不同波长的光， 以及由具有能带隙的半导体材料制成的颜色转换层。 根据本发明，可以获得不使用荧光体并且发射具有改进的显色指数的白光的情况下能够实现高发光效率的半导体发光器件。

公开(公告)号：KR1020080066366A

公开(公告)日：2008-07-16

申请号：KR1020070003705

申请日：2007-01-12

Applicant: 삼성전기주식회사

Inventor： 김민호 ,  박길한 ,  코이케마사요시

IPC: H01L33/02 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided to emit white light with high light emitting efficiency and an improved color rendering index by including a color conversion layer made of a semiconductor material that absorbs light emitted from an active layer and has an energy band gap for converting the absorbed light into light of a different wavelength. A light transmitting substrate(11) has first and second main surfaces confronting each other. A semiconductor layer of a first conductivity type is formed on the first main surface of the light transmitting substrate. An active layer(13) is formed on the semiconductor substrate of the first conductivity type. A semiconductor layer of a second conductivity type is formed on the active layer. A color conversion layer(15) is formed on the second main surface of the light transmitting substrate, made of a semiconductor material that absorbs the light emitted from the active layer and converts the absorbed light into light with a different wavelength. The content of a composition of the color conversion layer can be changed to have an energy band gap inclined along its thickness direction.

Abstract translation: 提供一种半导体发光器件，用于发射具有高发光效率和显色指数的白光，包括由半导体材料制成的颜色转换层，该半导体材料吸收从有源层发射的光并具有用于转换 将光吸收到不同波长的光。 透光基板（11）具有彼此相对的第一和第二主表面。 在透光基板的第一主表面上形成第一导电类型的半导体层。 在第一导电类型的半导体衬底上形成有源层（13）。 在有源层上形成第二导电类型的半导体层。 在透光基板的第二主表面上形成颜色转换层（15），该半导体材料由吸收从有源层发射的光的半导体材料制成，并将吸收的光转换成具有不同波长的光。 颜色转换层的组合物的含量可以改变为具有沿其厚度方向倾斜的能带隙。

公开(公告)号：KR100843402B1

公开(公告)日：2008-07-03

申请号：KR1020070061593

申请日：2007-06-22

Applicant: 삼성전기주식회사

Inventor： 이영진 ,  민병운 ,  박길한 ,  오누쉬킨그리고리

IPC: H05B37/02 ,  F21S2/00

CPC classification number: H05B33/0803 ,  H05B33/0821 ,  Y02B20/342 ,  Y10S362/80 ,  Y10S362/808

Abstract: An LED driving circuit and a light emitting diode array device are provided to reduce the number of LED devices used at the same output by increasing the ratio between the number of LED devices to be driven always among the total number of LED devices. An LED driving circuit includes at least one ladder net circuit, a first current loop(L1), and a second current loop(L2). The ladder net circuit has n+1 number of first branches, n+1 number of second branches, and n number of middle branches, wherein the n is a positive integer larger than 2. The first branches are connected in parallel between first and second contacts(a,b) by first middle contacts(c1,c2). The second branches are connected in parallel between the first and second contacts by second middle contacts(d1,d2). The ladder net circuit determines the order of the first and second branches and the middle contacts. The first current loop is connected to the (2m-1)th first branch, the 2m-th second branch, and the n number of middle branches. The first current loop has a first LED group connected to the (2m-1)th first branch, the 2m-th second branch, and the n number of middle branches in series. The second current loop are connected to the 2m-th first branch, the (2m-1)th second branch, and the n number of middle branches. The second current loop has a second LED group connected to the first LED group in series.

Abstract translation: 提供LED驱动电路和发光二极管阵列器件，以通过增加始终在LED器件的总数中驱动的LED器件的数量之间的比例来减少在相同输出处使用的LED器件的数量。 LED驱动电路包括至少一个梯形网电路，第一电流回路（L1）和第二电流回路（L2）。 梯形网电路具有n + 1个第一分支，n + 1个第二分支和n个中分支，其中n是大于2的正整数。第一分支在第一和第二分支之间并联连接 触点（a，b）由第一中间触点（c1，c2）组成。 第二分支通过第二中间触点（d1，d2）并联连接在第一和第二触点之间。 梯形网络电路确定第一和第二分支和中间触点的顺序。 第一个电流环路连接到第（2m-1）个第一分支，第二个第二分支和n个中间分支。 第一电流回路具有连接到第（2m-1）第一分支，第2m分支和n个中间分支的第一LED组。 第二电流环连接到第2m第1分支，（2m-1）第2分支和n个中分支。 第二电流回路具有连接到第一LED组的第二LED组。

公开(公告)号：KR1020080017173A

公开(公告)日：2008-02-26

申请号：KR1020060078987

申请日：2006-08-21

Applicant: 삼성전기주식회사

Inventor： 이상범 ,  박길한 ,  민경익 ,  명선영 ,  박희석 ,  정명식

IPC: H01L33/02

Abstract: A fabricating method of a nitride semiconductor light emitting device is provided to suppress a merged effect of a pyramid crystal structure by adjusting a window interval of a mask. A mask(23) having windows is formed on an upper surface of a base layer(22) including a first conductive type nitride semiconductor. A first conductive type nitride semiconductor crystal(24) of a hexagonal pyramid structure having an inclined crystal surface to an upper surface of the base layer is selectively grown on each of base layer regions exposed by the windows. An active layer(25) and a second conductive type nitride semiconductor layer(26) are sequentially grown on a surface of the first conductive type nitride semiconductor crystal. The mask is divided into at least two regions. The windows positioned on at least two regions are arranged at different intervals.

Abstract translation: 提供一种氮化物半导体发光器件的制造方法，通过调整掩模的窗口间隔来抑制金字塔晶体结构的合并效果。 在包括第一导电型氮化物半导体的基底层（22）的上表面上形成具有窗口的掩模（23）。 在由窗户露出的每个基底层区域上选择性地生长具有到基底层的上表面的倾斜晶体表面的六角锥体结构的第一导电型氮化物半导体晶体（24）。 在第一导电型氮化物半导体晶体的表面上依次生长有源层（25）和第二导电型氮化物半导体层（26）。 该掩模被分成至少两个区域。 位于至少两个区域上的窗口以不同的间隔布置。

公开(公告)号：KR1020080013636A

公开(公告)日：2008-02-13

申请号：KR1020060075407

申请日：2006-08-09

Applicant: 삼성전기주식회사

Inventor： 박희석 ,  박길한 ,  유상덕 ,  박영민 ,  김학환 ,  명선영 ,  이상범 ,  박기태 ,  정명식 ,  민경익

IPC: H01L33/16

CPC classification number: C30B25/04 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24

Abstract: A method for selectively growing a nitride semiconductor, a nitride semiconductor light emitting device, and a method for manufacturing the same are provided to reduce generation of stress and to uniformly maintain a thickness of an active layer by employing an intermediate isolation region having a tilt angle greater than that of a crystal surface of the other region. A mask(M) having an opening unit(W) is formed on a nitride semiconductor layer(33). A hexagon pyramid nitride semiconductor crystal structure(34) is selectively grown on the nitride semiconductor layer region exposed by the opening unit of the mask. The hexagon pyramid nitride semiconductor crystal structure has a slope crystal surface for an upper surface of the nitride semiconductor layer. The hexagon pyramid nitride semiconductor crystal structure includes at least one intermediate isolation region(34b). The intermediate isolation region has a crystal surface of a tilt angle greater than that of the crystal surface located on the upper and lower portions of the hexagon pyramid nitride semiconductor crystal structure.

Abstract translation: 提供了选择性地生长氮化物半导体的方法，氮化物半导体发光器件及其制造方法，以通过采用具有倾斜角的中间隔离区域来减少应力的产生和均匀地保持有源层的厚度 大于其他区域的晶体表面的厚度。 具有开口单元（W）的掩模（M）形成在氮化物半导体层（33）上。 在由掩模的开口单元暴露的氮化物半导体层区域上选择性地生长六角锥氮化物半导体晶体结构（34）。 六角锥氮化物半导体晶体结构具有用于氮化物半导体层的上表面的倾斜晶体表面。 六角锥氮化物半导体晶体结构包括至少一个中间隔离区域（34b）。 中间隔离区具有大于位于六角锥形氮化物半导体晶体结构的上部和下部的晶体表面的倾斜角的晶体表面。

公开(公告)号：KR100775137B1

公开(公告)日：2007-11-08

申请号：KR1020060070239

申请日：2006-07-26

Applicant: 삼성전기주식회사

Inventor： 최번재 ,  박길한 ,  이종호

IPC: H01L21/20

CPC classification number: H01L21/0254 ,  H01L21/02667 ,  H01L21/30604 ,  H01L21/3083

Abstract: A method of growing a nitride semiconductor layer is provided to decrease crystal defects at a window region by growing the nitride semiconductor layer on the window region between masks, as well as a wing region of the mask. A nitride semiconductor layer(110) is grown on a substrate(100), and then plural spaced masks(120) are formed on the nitride semiconductor layer. The nitride semiconductor layer exposed between the spaced masks is etched through wet etching so that the semiconductor layer has an inclined surface. After the etching, the nitride semiconductor layer is regrown on the remaining nitride semiconductor layer.

Abstract translation: 提供了生长氮化物半导体层的方法，以通过在掩模之间的窗口区域以及掩模的翼区域上生长氮化物半导体层来减小窗口区域处的晶体缺陷。 在衬底（100）上生长氮化物半导体层（110），然后在氮化物半导体层上形成多个隔开的掩模（120）。 通过湿蚀刻蚀刻在间隔开的掩模之间露出的氮化物半导体层，使得半导体层具有倾斜表面。 在蚀刻之后，氮化物半导体层在剩余的氮化物半导体层上再生长。

公开(公告)号：KR100755587B1

公开(公告)日：2007-09-06

申请号：KR1020060065567

申请日：2006-07-12

Applicant: 삼성전기주식회사

Inventor： 박기태 ,  유상덕 ,  민경익 ,  김학환 ,  박희석 ,  박길한

IPC: H01L33/12

Abstract: A nitride semiconductor light emitting device is provided to interrupt sufficiently overflowing halls by relieving an energy band gap difference between a hall interrupting layer and an active layer. An n-type cladding layer(103), a hall interrupting layer(104), an active layer(105) and a p-type cladding layer are sequentially formed on a substrate. The hall interrupting layer has at least two layers having different energy band gap, in which the energy band gap is decreased toward the active layer. The hall interrupting layer has a first band gap layer(104a) formed on the n-type cladding layer and a second band gap(104b) formed on the first band gap, in which the second band gap layer has an energy band gap smaller than that of the first band gap layer.

Abstract translation: 提供了一种氮化物半导体发光器件，用于通过消除霍尔中断层和有源层之间的能带间隙来中断足够溢出的门厅。 在衬底上依次形成n型包层（103），门厅中断层（104），有源层（105）和p型覆层。 霍尔中断层具有至少两层具有不同能带隙的层，其中能带隙朝向有源层减小。 霍尔中断层具有形成在n型包覆层上的第一带隙层（104a）和形成在第一带隙上的第二带隙（104b），其中第二带隙层的能带隙小于 第一个带隙层的层。