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公开(公告)号：KR101353212B1
公开(公告)日：2014-01-22
申请号：KR1020110057625
申请日：2011-06-14
IPC: H03K19/003 , H03K17/687
CPC classification number: H03K19/0016 , H04B1/44
Abstract: 본 발명은 인버터 및 인버터를 포함하는 안테나 회로에 관한 것으로, 제1제어신호, 제2제어신호 및 제3제어신호를 포함하는 제어신호를 인가 받아 인버팅된 신호를 출력하는 것에 있어서, 제1제어신호가 게이트에 인가되고, 소스는 접지되는 제1모스트랜지스터; 제3제어신호가 게이트에 인가되고, 제2제어신호가 소스에 인가되는 제2모스트랜지스터; 및 제2제어신호가 게이트에 인가되고, 제3제어신호가 소스에 인가되는 제3모스트랜지스터; 를 포함하며, 상기 제1모스트랜지스터, 제2모스트랜지스터 및 제3모스트랜지스터의 드레인이 출력단자에 연결되어 구성될 수 있다.
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公开(公告)号：KR101332039B1
公开(公告)日：2013-11-22
申请号：KR1020110057626
申请日：2011-06-14
CPC classification number: H04B1/48 , H04B2001/485
Abstract: 본 발명은 전원발생회로 및 전원발생회로가 구비된 스위칭회로에 관한 것으로, 제2제어신호가 제어단자에 인가되고, 제1제어신호가 일단에 인가되는 제1트랜지스터; 및 상기 제1제어신호가 제어단자에 인가되고, 상기 제2제어신호가 일단에 인가되는 제2트랜지스터;를 포함하며, 상기 제1트랜지스터 및 상기 제2트랜지스터의 타단이 출력단자에 연결될 수 있다.
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公开(公告)号：KR101255935B1
公开(公告)日：2013-04-23
申请号：KR1020110068003
申请日：2011-07-08
Applicant: 삼성전기주식회사
CPC classification number: H01L23/473 , H01L23/4334 , H01L23/49575 , H01L24/73 , H01L2224/32245 , H01L2224/48137 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00012 , H01L2924/00
Abstract: 본 발명은 전력 모듈 패키지 및 그 제조방법에 관한 것으로서, 메탈 재질로 이루어진 베이스기판; 베이스기판의 내부에 냉각물질이 흐를 수 있도록 형성된 냉각 채널; 베이스기판의 외면에 형성된 양극산화층; 양극산화층을 갖는 베이스기판의 제1 면에 형성된 회로 및 접속 패드를 포함하는 메탈층; 및 메탈층 상에 실장된 반도체 소자;를 포함하는 것을 특징으로 한다.
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公开(公告)号：KR101214678B1
公开(公告)日：2012-12-21
申请号：KR1020110058585
申请日：2011-06-16
IPC: H02M3/155 , H03K17/687 , G11C5/14
CPC classification number: H03F1/30
Abstract: PURPOSE: A power generating circuit and a switching circuit including the same are provided to minimize the performance deterioration of various devices by minimizing interference between the noise of a power amplifier and the noise of a switch unit. CONSTITUTION: A power generating circuit(130) includes a first MOS transistor(M1), a second MOS transistor(M2), a third MOS transistor(M3), and a fourth MOS transistor(M4). A second control signal is applied to a gate of the first MOS transistor. A first control signal is applied to a gate of the second MOS transistor. A source of the third MOS transistor is grounded. A source of the fourth MOS transistor is connected to a drain of the third MOS transistor.
Abstract translation: 目的：提供发电电路和包括该发电电路的开关电路，以通过最小化功率放大器的噪声与开关单元的噪声之间的干扰来最小化各种器件的性能恶化。 构成：发电电路（130）包括第一MOS晶体管（M1），第二MOS晶体管（M2），第三MOS晶体管（M3）和第四MOS晶体管（M4）。 第二控制信号施加到第一MOS晶体管的栅极。 第一控制信号施加到第二MOS晶体管的栅极。 第三个MOS晶体管的源极接地。 第四MOS晶体管的源极连接到第三MOS晶体管的漏极。
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公开(公告)号：KR101204223B1
公开(公告)日：2012-11-27
申请号：KR1020110066045
申请日：2011-07-04
Applicant: 삼성전기주식회사
CPC classification number: H01L2224/45139 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: PURPOSE: A power module package and a manufacturing method thereof are provided to improve the reliability of the package by integrating a lead frame and a thermal conductive polymer with injection molding. CONSTITUTION: A heat radiation substrate(110) includes a plurality of lead frames(113a,113b). The plurality of lead frames is separately buried in a thermal conductive polymer sheet member(111). A semiconductor chip is mounted on the heat radiation substrate. The thermal conductive polymer sheet member is arranged between the separated lead frames. One side of the lead frame is exposed to the thermal conductive polymer sheet member.
Abstract translation: 目的：提供功率模块封装及其制造方法，以通过将引线框和导热性聚合物与注塑成型相结合来提高封装的可靠性。 构成：散热基板（110）包括多个引线框架（113a，113b）。 多个引线框分别埋在导热聚合物片部件（111）中。 半导体芯片安装在散热基板上。 导热性聚合物片材构件设置在分离的引线框架之间。 引线框架的一侧暴露于导热聚合物片部件。
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Patent Agency Ranking
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公开(公告)号：KR1020140063185A
公开(公告)日：2014-05-27
申请号：KR1020120130244
申请日：2012-11-16
Applicant: 삼성전기주식회사
CPC classification number: H01L2224/48091 , H01L2924/00014
Abstract: The present invention relates to a substrate for a power module, a method for manufacturing the same, and a power module package using the same, wherein the substrate for a power module comprises a base substrate which has one surface and the other surface, and includes a V-groove formed with an arbitrary depth from the other surface on an edge region of the other surface; an insulating layer formed on one surface of the base substrate; and a metal layer for a circuit formed on the insulating layer.
Abstract translation: 电源模块用基板及其制造方法技术领域本发明涉及功率模块用基板及其制造方法以及使用其的功率模块封装，其特征在于，所述功率模块用基板包括基板，所述基板具有一个表面和另一个表面，并且包括 V形槽，在另一个表面的边缘区域上从另一个表面形成任意深度; 绝缘层，形成在所述基底基板的一个表面上; 以及形成在绝缘层上的用于电路的金属层。
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公开(公告)号：KR1020130101843A
公开(公告)日：2013-09-16
申请号：KR1020120022894
申请日：2012-03-06
Applicant: 삼성전기주식회사
CPC classification number: H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
Abstract: PURPOSE: A substrate for a power module is provided to improve adhesion by extending the bonding area between the molding compounds. CONSTITUTION: An insulating layer (120) is formed on a metal base substrate. A circuit layer (130) is formed on the insulating layer. The metal base substrate has at least one inclined surface (111). The inclined surface is formed on a lateral surface combined with the metal base substrate and the insulating layer. The inclined surface consists of a first inclined surface and a second inclined surface.
Abstract translation: 目的：提供用于功率模块的基板，以通过延长模塑料之间的粘合面积来提高粘合性。 构成：在金属基底基板上形成绝缘层（120）。 在绝缘层上形成电路层（130）。 金属基底具有至少一个倾斜表面（111）。 倾斜表面形成在与金属基底和绝缘层组合的侧表面上。 倾斜表面由第一倾斜表面和第二倾斜表面组成。
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公开(公告)号：KR1020120139623A
公开(公告)日：2012-12-27
申请号：KR1020120120340
申请日：2012-10-29
IPC: H03K17/687
CPC classification number: H03K17/167 , H03K17/693 , H03K2217/0036
Abstract: PURPOSE: A power generation circuit and a switching circuit including the same are provided to minimize the performance degradation of each components by minimizing mutual interference generated between noise of a power amplifier and noise of a switch. CONSTITUTION: A control terminal of a first transistor(M1) receives a second control signal. One end of the first transistor receives a first control signal. The other end of the first transistor is connected to an output terminal. A control terminal of a second transistor(M2) receives the first control signal. One end of the second transistor receives the second control signal. The other end of the second transistor is connected to the output terminal. A third transistor(M3) includes a control terminal which receives one control signal selected from the control signals. A fourth transistor(M4) includes a control terminal which receives the other control signals selected from the control signals.
Abstract translation: 目的：提供一种发电电路和包括该发电电路的开关电路，通过最小化功率放大器的噪声与开关噪声之间产生的相互干扰来最小化每个组件的性能下降。 构成：第一晶体管（M1）的控制端子接收第二控制信号。 第一晶体管的一端接收第一控制信号。 第一晶体管的另一端连接到输出端子。 第二晶体管（M2）的控制端接收第一控制信号。 第二晶体管的一端接收第二控制信号。 第二晶体管的另一端连接到输出端子。 第三晶体管（M3）包括控制端子，其接收从控制信号中选择的一个控制信号。 第四晶体管（M4）包括控制端子，其接收从控制信号中选择的其它控制信号。
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