公开(公告)号：KR1020040107985A

公开(公告)日：2004-12-23

申请号：KR1020030038712

申请日：2003-06-16

Applicant: 삼성전자주식회사

Inventor： 최희환 ,  강성철 ,  김상갑

IPC: H01L21/3065

Abstract: PURPOSE: A method of controlling automatically the pressure of a plasma etching apparatus is provided to etch uniformly a thin film of a substrate by obtaining the same pressure values from a plurality of pumps of a chamber. CONSTITUTION: A plasma etching apparatus includes a plurality of gas flow rate controllers. Pressure values are obtained from the ambient of each gas flow rate controller of the plasma etching apparatus(S110). The obtained pressure values are transmitted to a pressure controller and the mean value of the pressure values is set as a reference pressure value(S120). The plurality of gas flow rate controllers are controlled to have the reference pressure value(S130).

Abstract translation: 目的：提供一种自动控制等离子体蚀刻设备的压力的方法，以通过从室的多个泵获得相同的压力值来均匀地蚀刻衬底的薄膜。 构成：等离子体蚀刻装置包括多个气体流量控制器。 从等离子体蚀刻装置的各气体流量控制器的环境获得压力值（S110）。 所获得的压力值被传送到压力控制器，并将压力值的平均值设定为基准压力值（S120）。 将多个气体流量控制器控制为具有基准压力值（S130）。

公开(公告)号：KR1020040093261A

公开(公告)日：2004-11-05

申请号：KR1020030025568

申请日：2003-04-22

Applicant: 삼성전자주식회사

Inventor： 최희환 ,  강성철 ,  김상갑

IPC: H01L21/3065

Abstract: PURPOSE: A dry etching apparatus is provided to distribute uniformly reaction gas to a surface of a wafer by adjusting the sizes or intervals of through holes in an upper electrode corresponding to exhaust ports of a lower electrode. CONSTITUTION: A chamber(10) includes a gas injection port(50) and exhaust ports(20). A lower electrode(30) is installed in the chamber. An upper electrode(40) with a plurality of through holes(45) is spaced apart from the lower electrode. At this time, the sizes and intervals of the through holes are controlled according to the distance between the through holes and the exhaust ports. A power supply(60) is connected with the upper and lower electrode.

Abstract translation: 目的：提供一种干蚀刻装置，通过调节与下电极的排气口相对应的上电极中的通孔的尺寸或间隔，将反应气体均匀地分布到晶片的表面。 构成：室（10）包括气体注入口（50）和排气口（20）。 下部电极（30）安装在腔室中。 具有多个通孔（45）的上电极（40）与下电极间隔开。 此时，根据通孔与排气口的距离来控制通孔的尺寸和间隔。 电源（60）与上电极和下电极连接。

公开(公告)号：KR100453236B1

公开(公告)日：2004-10-15

申请号：KR1020010074293

申请日：2001-11-27

Applicant: 삼성전자주식회사

Inventor： 장의영 ,  강성철 ,  정성욱

IPC: F25D17/06

CPC classification number: F25D17/065 ,  F25B5/04 ,  F25D2317/061 ,  F25D2317/0665 ,  F25D2317/0672 ,  F25D2317/0682 ,  F25D2400/04 ,  F25D2700/123

Abstract: A refrigerator with a multipurpose storage chamber (30) and a control method thereof are provided. In the refrigerator, the flow of cool air to the multipurpose storage chamber (30) is selectively controlled in accordance with a variety of operational modes. In order to accomplish such a cool air flow control, a refrigerating compartment fan (6) and a damper (9) are provided at positions above a refrigerating compartment evaporator (5). In addition, a flap (33) having a controllable opening angle, is provided at the inlet of an air guide path (34) guiding the cool air to the multipurpose storage chamber (30). The multipurpose storage chamber (30) of this refrigerator can thus effectively be used to store a variety of foods in accordance with storage characteristics of the foods. In addition, a thawing mode operation of the refrigerator is performed under the condition that it is not necessary to perform a refrigerating compartment cooling operation. It is thus possible to prevent an excessive increase in the temperature of the refrigerating compartment (10) caused by an operation of the defrosting heater (12) during such a thawing mode.

Abstract translation: 提供一种具有多用途储藏室（30）的冰箱及其控制方法。 在冰箱中，根据各种操作模式选择性地控制到多用途存储室（30）的冷空气的流动。 为了实现这种冷气流量控制，在冷藏室蒸发器（5）上方的位置设置冷藏室风扇（6）和风门（9）。 另外，在将冷空气引导到多用途存储室（30）的空气引导通道（34）的入口处设置具有可控打开角度的挡板（33）。 因此，该冰箱的多功能储藏室（30）可以根据食物的储存特性有效地用于储存各种食物。 另外，在不需要执行冷藏室冷却操作的条件下执行冰箱的解冻模式操作。 因此可以防止在解冻模式期间由于除霜加热器（12）的操作而引起的冷藏室（10）的温度过度升高。 ＆lt;图像＆GT;

公开(公告)号：KR1020040074770A

公开(公告)日：2004-08-26

申请号：KR1020030010166

申请日：2003-02-18

Applicant: 삼성전자주식회사

Inventor： 조홍제 ,  강성철 ,  박애나

IPC: G02F1/136

Abstract: PURPOSE: A forming method of molybdenum thin film patterns is provided to etch a formed molybdenum thin film to make molybdenum thin film patterns, and to cleanly fabricate the molybdenun thin film patterns without residuals, stains or step differences, thereby improving the quality of a substrate. CONSTITUTION: Gate lines consisting of the first gate line layers(221,241) and the second gate line layers(222,242) are formed on an insulating substrate(10). The gate lines include gate lines(22), gate line ends(24), and gate electrodes. Maintenance electrode lines(28) are formed on the insulating substrate(10) in parallel with the gate lines(22). The maintenance electrode lines(28) consist of the first gate line layer(281) and the second gate line layer(282). Data line layers(62,64,68) made of molybdenum-tungsten alloy films are formed on resistive contact layer patterns(55).

Abstract translation: 目的：提供钼薄膜图案的形成方法来蚀刻形成的钼薄膜以制造钼薄膜图案，并且清洁地制造钼残片，不残留，污渍或阶差，从而提高基板的质量 。 构成：在绝缘基板（10）上形成由第一栅极线层（221,241）和第二栅极线层（222,242）构成的栅极线。 栅极线包括栅极线（22），栅极线端部（24）和栅极电极。 维护电极线（28）与栅极线（22）平行地形成在绝缘基板（10）上。 维护电极线（28）由第一栅线层（281）和第二栅线层（282）构成。 由钼 - 钨合金膜制成的数据线层（62,64,68）形成在电阻性接触层图案（55）上。

公开(公告)号：KR1020040061670A

公开(公告)日：2004-07-07

申请号：KR1020020087955

申请日：2002-12-31

Applicant: 삼성전자주식회사

Inventor： 박애나 ,  강성철 ,  박홍식 ,  조홍제 ,  박봉욱

IPC: G01N27/00

Abstract: PURPOSE: A sample and a method for testing detergency are provided to reduce the time for developing a detergent and to accurately check the properties of a detergent by varying the elements contained in the detergent during a test. CONSTITUTION: A detergency testing sample(100) comprises a substrate(10), a gate electrode(20) formed on the substrate and made of a mono silicon doped with metal or ion, a gate insulating film(30) formed on the gate electrode and made of SiO2, a channel layer(40) formed on the upper face of the gate electrode and made of amorphous silicon or poly silicon, a source electrode(50) placed on the upper face of the channel layer and made of mercury, and a drain electrode(60) placed on the upper face of the channel layer and made of mercury.

Abstract translation: 目的：提供一种用于测试洗涤力的样品和方法，以减少洗涤剂的显影时间，并通过在测试期间改变洗涤剂中所含的元素来精确地检查洗涤剂的性质。 洗涤力测试样品（100）包括基板（10），形成在基板上并由掺杂有金属或离子的单硅制成的栅电极（20），形成在栅电极上的栅极绝缘膜（30） 由SiO 2制成，沟道层（40），形成在栅电极的上表面上，由非晶硅或多晶硅构成，源电极（50）放置在沟道层的上表面并由汞制成，以及 漏极电极（60），放置在沟道层的上表面并由汞制成。

公开(公告)号：KR1020040026802A

公开(公告)日：2004-04-01

申请号：KR1020020058392

申请日：2002-09-26

Applicant: 삼성전자주식회사

Inventor： 강성철 ,  박홍식 ,  박애나 ,  조홍제

IPC: C09K3/14

CPC classification number: C09K13/04 ,  C23F1/20 ,  C23F1/26

Abstract: PURPOSE: An etchant composition for a liquid crystal display device and a liquid crystal display device prepared by using the composition are provided, to prevent the photoresist attack in etching by controlling the content of nitric acid and acetic acid for obtaining a desired pattern and to allow a Mo/Al-alloy dual layer, a pure Mo single layer and a Mo/Al-alloy/Mo triple layer to be etched at a time. CONSTITUTION: The etchant composition comprises 50-70 wt% of phosphoric acid; 6-7 wt% of nitric acid; 10-16 wt% of acetic acid; and the balance of deionized water. The liquid crystal display device contains the pattern which is etched by using the etchant composition. Optionally the composition comprises further a surfactant.

Abstract translation: 目的：提供通过使用该组合物制备的液晶显示装置和液晶显示装置的蚀刻剂组合物，以通过控制硝酸和乙酸的含量以获得期望的图案来防止蚀刻中的光致抗蚀剂侵袭，并允许 Mo / Al合金双层，纯Mo单层和一次蚀刻的Mo / Al合金/ Mo三层。 构成：蚀刻剂组成包含50-70重量％的磷酸; 6-7重量％硝酸; 10-16重量％的乙酸; 和去离子水的平衡。 液晶显示装置包含通过使用蚀刻剂组合物进行蚀刻的图案。 任选地，组合物还包含表面活性剂。

公开(公告)号：KR1020040024993A

公开(公告)日：2004-03-24

申请号：KR1020020056767

申请日：2002-09-18

Applicant: 삼성전자주식회사

Inventor： 조홍제 ,  박애나 ,  박홍식 ,  강성철

IPC: G02F1/136

CPC classification number: G02F1/136 ,  B32B2457/202 ,  G02B1/14 ,  G02F1/133345 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L27/124

Abstract: PURPOSE: A thin film transistor and its fabrication method are provided to form an interconnection line having low resistance. CONSTITUTION: The thin film transistor comprises an insulation substrate, and a gate line(121) which is formed on the insulation substrate to transfer a scanning signal. And a data line is formed to cross with the gate line and transfers an image signal. At least one of the gate line or the data line is formed with a tri-layer where the first molybdenum layer and an aluminum neodymium layer and the second molybdenum layer are stacked in sequence.

Abstract translation: 目的：提供薄膜晶体管及其制造方法以形成具有低电阻的互连线。 构成：薄膜晶体管包括绝缘基板和形成在绝缘基板上以传送扫描信号的栅极线（121）。 并且形成数据线与栅极线交叉并传送图像信号。 栅极线或数据线中的至少一个由三层形成，其中第一钼层和铝钕层和第二钼层依次层叠。

公开(公告)号：KR1020040000801A

公开(公告)日：2004-01-07

申请号：KR1020020035752

申请日：2002-06-25

Applicant: 삼성전자주식회사

Inventor： 박홍식 ,  강성철 ,  조홍제

IPC: C09K13/00

CPC classification number: C23F1/30 ,  C09K13/06 ,  C23F1/02 ,  H01L21/32134 ,  H01L27/124 ,  H01L27/13

Abstract: PURPOSE: An etching solution for wire, a preparation method of wire using the solution, a TFT (thin film transistor) substrate containing the wire and its preparation method are provided, to use a conductive layer having a low resistance and a high reflectivity as a reflective layer by allowing a reflective layer to be patterned easily. CONSTITUTION: The etching solution comprises 1-5 wt% of ferric nitrate; 1-5 wt% of nitric acid; 5-20 wt% of acetic acid; 0.05-1 wt% of hexaethylene glycol tetramine; and the balance of ultrapure water. The preparation method of wire comprises the steps of layering a conductive layer comprising silver or silver alloy; and patterning the conductive layer by using the etching solution. The TFT array substrate is prepared by forming a gate wire comprising a gate line and a gate electrode connected with the gate line on an insulating substrate(100); layering a gate laminating layer; forming a semiconductor layer; forming a data wire comprising a data line crossed with the gate line, a source electrode connected with the data line and adjacent to the gate electrode, and a drain electrode placed at the opposite side of the source electrode to the gate electrode; layering a conductive layer comprising silver or silver alloy; and patterning the conductive layer by using the etching solution to form a reflective layer(800) connected with the drain electrode electrically.

Abstract translation: 目的：提供一种用于线材的蚀刻溶液，使用该溶液的线材的制备方法，含有该线材的TFT（薄膜晶体管）基板及其制备方法，以使用具有低电阻和高反射率的导电层作为 通过允许反射层被容易地图案化来形成反射层。 构成：蚀刻溶液含有1-5重量％的硝酸铁; 1-5重量％的硝酸; 5-20重量％的乙酸; 0.05-1重量％的六甘醇四胺; 和超纯水的平衡。 线的制备方法包括以下步骤：分层包含银或银合金的导电层; 并通过使用蚀刻溶液图案化导电层。 通过在绝缘基板（100）上形成包括栅极线和与栅极线连接的栅电极的栅极线来制备TFT阵列基板; 分层栅层叠层; 形成半导体层; 形成包括与所述栅极线交叉的数据线的数据线，与所述数据线连接并与所述栅电极相邻的源极，以及设置在所述源电极的与所述栅电极相反的一侧的漏极; 层叠包含银或银合金的导电层; 以及通过使用蚀刻溶液来图案化导电层，以形成与漏电极电连接的反射层（800）。

公开(公告)号：KR1020030094481A

公开(公告)日：2003-12-12

申请号：KR1020020031419

申请日：2002-06-04

Applicant: 삼성전자주식회사

Inventor： 박애나 ,  강성철 ,  박홍식 ,  조홍제 ,  박봉옥

IPC: H01L29/786

Abstract: PURPOSE: A method for forming a molybdenum-tungsten thin film pattern and a method for manufacturing a TFT(Thin Film Transistor) substrate of an LCD(Liquid Crystal Display) using the same are provided to be capable of supplying optimum condition capable of forming an easily etched molybdenum-tungsten thin film. CONSTITUTION: A sputtering process is carried out for forming a molybdenum-tungsten thin film from the room temperature to 80 °C. At this time, the sputtering process is carried out with a speed of 0.010-0.015 angstrom/Ws. Then, an etching process is carried out at the molybdenum-tungsten thin film for selectively patterning the molybdenum-tungsten thin film. Preferably, the target size of the sputtering process is in the range of 144 ±10 x 660 ±10(mm x mm).

Abstract translation: 目的：提供一种用于形成钼 - 钨薄膜图案的方法和使用其的LCD（液晶显示器）的TFT（薄膜晶体管）基板的制造方法，以能够提供能够形成 易蚀刻钨钼薄膜。 构成：对室温至80℃的钼 - 钨薄膜进行溅射处理。 此时，溅射过程以0.010-0.015埃/ Ws的速度进行。 然后，在钼 - 钨薄膜上进行蚀刻处理，以选择性地图案化钼 - 钨薄膜。 优选地，溅射工艺的目标尺寸在144±10×660±10（mm×mm）的范围内。

公开(公告)号：KR1020030092159A

公开(公告)日：2003-12-06

申请号：KR1020020029349

申请日：2002-05-27

Applicant: 삼성전자주식회사

Inventor： 박봉옥 ,  강성철 ,  박홍식 ,  박애나 ,  조홍제

IPC: G02F1/136

CPC classification number: G02F1/136 ,  G02F1/133345 ,  G02F1/13458 ,  G02F2001/136222 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2201/42 ,  H01L29/786

Abstract: PURPOSE: A method for forming a molybdenum-tungsten thin film and a method for manufacturing thin film transistors of a liquid crystal display using the same are provided to realize a molybdenum-tungsten thin film having high density, large grain size, and low resistance. CONSTITUTION: A first gate wiring layer is formed on a substrate, and MoW is sputtered in a range of 100 to 150 deg. to form a second gate wiring layer. The first gate wiring layer and the second gate wiring layer are etched to form gate patterns including gate lines, gate pads, and gate electrodes. A gate insulating film is deposited on the gate patterns. Semiconductor and resistant contact patterns are formed. MoW is sputtered in a range of 100 to 150 deg. and is patterned to form data wiring. A passivation film is formed and patterned with the gate insulating film for forming contact holes exposing the gate pads, data pads, and drain electrodes. A transparent conductive film is accumulated and etched to form auxiliary gate pads, auxiliary data pads, and pixel electrodes.

Abstract translation: 目的：提供一种形成钼 - 钨薄膜的方法和使用其制造液晶显示器的薄膜晶体管的制造方法，以实现具有高密度，大晶粒度和低电阻的钼 - 钨薄膜。 构成：在基板上形成第一栅极布线层，在100〜150度的范围内溅射MoW。 以形成第二栅极布线层。 第一栅极布线层和第二栅极布线层被蚀刻以形成包括栅极线，栅极焊盘和栅电极的栅极图案。 栅极绝缘膜沉积在栅极图案上。 形成半导体和电阻接触图形。 MoW在100至150度的范围内溅射。 并被图案化以形成数据布线。 形成钝化膜并用栅极绝缘膜构图，用于形成暴露栅极焊盘，数据焊盘和漏极电极的接触孔。 积聚并蚀刻透明导电膜以形成辅助栅极焊盘，辅助数据焊盘和像素电极。