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公开(公告)号：KR101527869B1
公开(公告)日：2015-06-11
申请号：KR1020080114755
申请日：2008-11-18
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0079 , H01L2924/0002 , H01L2924/00
Abstract: 대면적본딩웨이퍼를이용한웨이퍼본딩방식의발광소자제조방법이개시된다. 개시된발광소자제조방법은반도체박막이성장되어있는여러장의웨이퍼를한 장의대면적본딩웨이퍼위에접합한후, 이러한본딩웨이퍼를장비에투입하여발광소자의제조공정을진행한다. 이때, 사파이어와같은웨이퍼재료와본딩웨이퍼사이의열팽창계수의차이로인한휨이나뒤틀림문제가거의발생하지않도록적당한재질의본딩웨이퍼를사용한다. 이방식에따르면여러장의웨이퍼가한 번의공정으로처리되기때문에, 발광소자의대량생산이가능하다. 따라서발광소자의제조비용을저감시킬수 있다.
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公开(公告)号：KR1020150027636A
公开(公告)日：2015-03-12
申请号：KR1020130106307
申请日：2013-09-04
Applicant: 삼성전자주식회사
CPC classification number: H05G1/30 , G01N23/04 , G01T1/24 , G03G15/222 , H01L27/14676
Abstract: 잔류 전하 제거 방법, 이를 이용한 엑스선 영상 촬영 장치 및 방법이 개시된다. 잔류 전하 제거 방법은 엑스선 조사에 의해 광전도 물질(photoconductor) 내에 형성된 전하를 수집하기 위해, 상기 광전도 물질 내에 제1 전기장(electric field)을 형성하는 단계; 엑스선 조사가 끝난 후, 상기 광전도 물질내에 잔류하는 전하를 제거하기 위해, 상기 광전도 물질내에 상기 제1 전기장과 다른 제2 전기장을 형성하는 단계;를 포함한다.
Abstract translation: 公开了一种消除残留电荷的方法，使用其的X射线摄像装置及其方法。 消除残余电荷的方法包括以下步骤：在光电导体中形成第一电场，以通过X射线照射收集在感光体中形成的电荷; 并且形成与光电导体中的第一电场不同的第二电场，以在X射线照射完成之后消除来自光电导体的剩余电荷。
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公开(公告)号：KR101438642B1
公开(公告)日：2014-09-17
申请号：KR1020130133002
申请日：2013-11-04
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/336
Abstract: 박막 트랜지스터 및 그 제조방법에 관해 개시되어 있다. 개시된 본 발명의 박막 트랜지스터는 산화물 반도체 물질로 형성된 채널층, 상기 채널층 상에 서로 마주보며 위치하는 소오스 전극 및 드레인 전극, 상기 소오스 전극 및 상기 드레인 전극의 아래에서 상기 채널층을 커버하도록 형성된 보호층, 상기 채널층에 전계를 인가하기 위한 게이트 전극, 및 상기 게이트 전극과 상기 채널층 사이에 개재된 게이트 절연층을 포함하는 것을 특징으로 한다.
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公开(公告)号：KR1020130129873A
公开(公告)日：2013-11-29
申请号：KR1020130133002
申请日：2013-11-04
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/7869 , H01L29/78618
Abstract: Provided are a thin film transistor and a method for manufacturing the same. The transistor consists of a channel layer made of oxide semiconductor; a source electrode and a drain electrode which are placed on the channel layer while facing each other; a protective layer to cover the channel layer while being placed below the source electrode and the drain electrode; a gate electrode to apply an electric field to the channel layer; and a gate insulation layer which is placed between the gate electrode and the channel layer.
Abstract translation: 提供一种薄膜晶体管及其制造方法。 晶体管由氧化物半导体构成的沟道层构成; 源电极和漏电极，其彼此面对地放置在沟道层上; 保护层，覆盖沟道层，同时放置在源电极和漏极之下; 栅电极，用于向沟道层施加电场; 以及栅极绝缘层，其设置在栅电极和沟道层之间。
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公开(公告)号：KR1020130110957A
公开(公告)日：2013-10-10
申请号：KR1020120033339
申请日：2012-03-30
Applicant: 삼성전자주식회사
IPC: G01T1/24 , A61B6/00 , H01L31/115
CPC classification number: G01T1/247 , H01L27/14636 , H01L27/14676
Abstract: PURPOSE: An X-ray detecting device is provided to commonly apply power to a plurality of pixels, thereby smoothly supplying power to the X-ray detecting device regardless of the number of the pixels of the X-ray detecting device. CONSTITUTION: An X-ray detecting device includes a silicon substrate (110), a plurality of pixels (120), a control pad (140), and a power pad (130). The silicon substrate is composed of a first region (112) and a second region (114). The pixels are arranged on the first region and detect X-rays. The control pad is arranged on the second region and supplies common control signals to the pixels. The power pad is arranged on the first region and supplies power to the grouped pixels.
Abstract translation: 目的：提供一种X射线检测装置，其通常对多个像素施加电力，从而平均地向X射线检测装置供电，而与X射线检测装置的像素数无关。 构成：X射线检测装置包括硅衬底（110），多个像素（120），控制焊盘（140）和电源焊盘（130）。 硅衬底由第一区域（112）和第二区域（114）组成。 像素布置在第一区域上并检测X射线。 控制板布置在第二区域上，并向像素提供公共控制信号。 功率垫布置在第一区域上，并为分组的像素供电。
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Patent Agency Ranking
公开(公告)号：KR1020120065047A
公开(公告)日：2012-06-20
申请号：KR1020100126356
申请日：2010-12-10
Applicant: 삼성전자주식회사
IPC: H01L31/115 , H01L27/14
CPC classification number: H01L27/14676 , H01L23/481 , H01L27/14634 , H01L27/14636 , H01L27/14659 , H01L27/14661 , H01L27/1469 , H01L2224/0401 , H01L2224/05 , H01L2224/13 , H01L2224/13025 , H01L2224/16225 , H01L2224/16227 , H01L31/10 , H01L27/14 , H01L31/115
Abstract: PURPOSE: An X-ray detector of a wafer scale and a manufacturing method thereof are provided to implement seamless images by using a chip array manufactured with the wafer scale. CONSTITUTION: A plurality of chip areas(A,B) are formed on a silicon substrate(120). Pixel pads(132) are formed in the center of the chip area. A pin pad(134) is formed on the edge of the chip area to surround the pixel pads. The pin pad is connected to a via contact(139) formed in a via hole(135) of the silicon substrate. A first insulation layer(130) is formed on the silicon substrate to insulate the pixel pads and the pin pads from the silicon substrate.
Abstract translation: 目的：提供晶片尺寸的X射线检测器及其制造方法，通过使用由晶片刻度尺制造的芯片阵列来实现无缝图像。 构成：在硅衬底（120）上形成多个芯片区域（A，B）。 像素焊盘（132）形成在芯片区域的中心。 引脚焊盘（134）形成在芯片区域的边缘上以围绕像素焊盘。 引脚焊盘连接到形成在硅衬底的通孔（135）中的通孔接触（139）。 在硅衬底上形成第一绝缘层（130），以使像素焊盘和引脚焊盘与硅衬底绝缘。
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公开(公告)号：KR1020110138624A
公开(公告)日：2011-12-28
申请号：KR1020100058624
申请日：2010-06-21
Applicant: 삼성전자주식회사
IPC: H01L31/115
CPC classification number: G01T1/24 , H01L24/24 , H01L24/73 , H01L27/14609 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14676 , H01L27/14687 , H01L31/085 , H01L2224/16225 , H01L2924/12043 , H01L2924/14 , H01L2924/15788 , H01L2924/00
Abstract: PURPOSE: A large-scaled x-ray detector and a manufacturing method thereof are provided to transfer charges detected in a photo conductor layer corresponding to an on-demand semiconductor joint area to an on-demand semiconductor, thereby accurately realizing an image on a photographing area without a joint. CONSTITUTION: A photo conductor layer(340) generates an electrical signal by an incident x-ray. A common electrode(350) is formed on one side of the photo conductor layer. A plurality of pixel electrodes(342) is formed on the other side of the photo conductor layer. A planar film(330) covers an on-demand semiconductor(320). The planar film is formed on a printed circuit board(310). A plurality of contacts(322) is formed on the lower part of the on-demand semiconductor.
Abstract translation: 目的：提供一种大型X射线检测器及其制造方法，用于将对应于按需半导体接合区域的光导体层中检测出的电荷传送到点播半导体，从而准确地实现拍摄中的图像 没有关节的区域 构成：光导体层（340）通过入射的x射线产生电信号。 公共电极（350）形成在光导体层的一侧。 在光导体层的另一侧上形成有多个像素电极（342）。 平面薄膜（330）覆盖按需半导体（320）。 平面膜形成在印刷电路板（310）上。 在按需半导体的下部形成有多个触点（322）。
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公开(公告)号：KR1020110109066A
公开(公告)日：2011-10-06
申请号：KR1020100028616
申请日：2010-03-30
Applicant: 삼성전자주식회사
IPC: H01L31/115
CPC classification number: H01L31/085 , G01T1/24
Abstract: 산화물 반도체 트랜지스터를 구비한 엑스선 검출기가 개시된다. 개시된 산화물 반도체 트랜지스터를 구비한 엑스선 검출기는, 기판 상에서 직렬로 배치된 산화물 반도체 물질로 형성된 채널을 구비한 산화물 반도체 트랜지스터 및 신호저장 커패시터와 포토컨덕터를 구비한다. 포토컨덕터의 양면에는 각각 픽셀전극 및 공통전극이 형성된다. 상기 채널은 ZnO 또는 ZnO에 Ga, In, Hf, Sn 중 선택된 적어도 하나를 포함하는 화합물로 이루어진 산화물 반도체 채널이다.
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公开(公告)号：KR1020110072270A
公开(公告)日：2011-06-29
申请号：KR1020090129127
申请日：2009-12-22
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L29/786
CPC classification number: H01L29/7869 , H01L29/4908 , H01L29/66969 , H01L29/78696 , H01L29/4232 , H01L29/1025 , H01L29/41725
Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to improve the reliability of a flat panel display device by suppressing the property change of a transistor due to light. CONSTITUTION: A channel layer(C1) includes an oxide semiconductor. A source and a drain are contacted with both sides of the channel layer. A gate(G1) corresponds to the channel layer. A gate insulation layer is formed between the channel layer and the gate. A fluorine containing region is located on a contact interface between the channel layer and the gate insulation layer. The fluorine containing region is a region processed with plasma including fluorine.
Abstract translation: 目的：提供晶体管及其制造方法以及包括该晶体管的电子器件，以通过抑制由于光导致的晶体管的特性变化来提高平板显示装置的可靠性。 构成：通道层（C1）包括氧化物半导体。 源极和漏极与沟道层的两侧接触。 栅极（G1）对应于沟道层。 在沟道层和栅极之间形成栅极绝缘层。 含氟区域位于沟道层和栅极绝缘层之间的接触界面上。 含氟区域是用含氟的等离子体处理的区域。
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公开(公告)号：KR1020100124052A
公开(公告)日：2010-11-26
申请号：KR1020090043095
申请日：2009-05-18
Applicant: 삼성전자주식회사
CPC classification number: G06F21/74 , G06F9/30189 , G06F9/322 , G06F2221/2105 , G06F21/00
Abstract: PURPOSE: A security environment device and a method thereof which is independent from platform are provided to switch into security environment by turning on security bit after succeeding branch command. CONSTITUTION: A security monitor(110) watches a call of a security code by a processor(100), and creates a branch instruction. If the branch instruction is successfully operated by the processor, the security monitor makes the security bit on. If the execution of the security code is completed, the security monitor makes the security bit off. A command bypass ROM(120) receives the branch instruction from the security monitor.
Abstract translation: 目的：提供独立于平台的安全环境设备及其方法，以便在后续分支命令之后打开安全位，切换到安全环境。 构成：安全监视器（110）通过处理器（100）监视安全码的呼叫，并创建分支指令。 如果分支指令由处理器成功运行，则安全监视器将使安全位打开。 如果安全代码的执行完成，则安全监视器会使安全位关闭。 命令旁路ROM（120）从安全监视器接收分支指令。
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