-
公开(公告)号：KR1020120067157A
公开(公告)日：2012-06-25
申请号：KR1020100128611
申请日：2010-12-15
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02601 , H01L33/04 , H01L2933/0058
Abstract: PURPOSE: A light emitting device and a manufacturing method thereof are provided to easily increase a light emitting amount per unit area by forming a number of vertical light emitting structures in a narrow region. CONSTITUTION: A semiconductor layer(200) is formed on a substrate(100). An insulating layer(250) is formed on the semiconductor layer. One or more vertical light emitting structures(LE1) are located on the insulating layer. The vertical light emitting structure comprises a first conductive semiconductor(300), an active layer(310), and a second conductive semiconductor(320). A nano particle is formed in at least one of the first conductive type semiconductor, the active layer, and the second conductive semiconductor.
Abstract translation: 目的：提供一种发光器件及其制造方法，通过在狭窄的区域中形成多个垂直发光结构，容易地增加每单位面积的发光量。 构成：半导体层（200）形成在基板（100）上。 绝缘层（250）形成在半导体层上。 一个或多个垂直发光结构（LE1）位于绝缘层上。 垂直发光结构包括第一导电半导体（300），有源层（310）和第二导电半导体（320）。 在第一导电类型半导体，有源层和第二导电半导体中的至少一个中形成纳米颗粒。
-
公开(公告)号：KR1020120055388A
公开(公告)日：2012-05-31
申请号：KR1020100117107
申请日：2010-11-23
Applicant: 삼성전자주식회사
IPC: H01L33/16 , B82Y20/00 , H01L21/02 , H01L33/08 , H01L33/04 , H01L33/14 , H01L33/40 , H01L33/42 , H01L33/32
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02603 , H01L33/04 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42
Abstract: PURPOSE: A nano rod light emitting device is provided to reduce leakage current by employing a nano insertion layer on a lower core part in a core-cell type light emitting structure. CONSTITUTION: A nano insertion layer(142) is formed within a penetration hole. A semiconductor nano core(144) is grown from the nano insertion layer to the outside of the penetration hole. An active layer(146) is formed by covering the surface of the semiconductor nano core. A second semiconductor layer(148) is formed by covering the surface of the active layer. A first electrode and a second electrode are respectively and electrically connected to the semiconductor nano core and the second semiconductor layer.
Abstract translation: 目的：提供一种纳米棒状发光装置，通过在芯电池型发光结构的下芯部上采用纳米插入层来减少泄漏电流。 构成：在穿透孔内形成纳米插入层（142）。 半导体纳米芯（144）从纳米插入层生长到穿透孔的外部。 通过覆盖半导体纳米芯的表面形成有源层（146）。 通过覆盖有源层的表面形成第二半导体层（148）。 第一电极和第二电极分别电连接到半导体纳米芯和第二半导体层。
-
公开(公告)号：KR1020120052651A
公开(公告)日：2012-05-24
申请号：KR1020100113908
申请日：2010-11-16
Applicant: 삼성전자주식회사
CPC classification number: H01L33/16 , B82Y20/00 , H01L21/02603 , H01L33/04 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/42
Abstract: PURPOSE: A nano rod light emitting device is provide to control the shape of a tip part of a light emitting nano rod which has a core-shell structure, thereby emitting multi frequency light. CONSTITUTION: A mask layer comprises a penetration hole. A nano core(141) is vertically grown above the mask layer through the penetration hole. The nano core includes a rod part(R) which includes a rod surface(141a) and a tip part(T) which includes one or more surfaces(141b,141c). An active layer(143) emits light from electron-hole recombination. A second semiconductor layer(145) is formed by covering the surface of the active layer.
Abstract translation: 目的：提供纳米棒状发光装置，以控制具有核 - 壳结构的发光纳米棒的尖端部分的形状，从而发射多频光。 构成：掩模层包括穿透孔。 通过穿透孔将纳米芯（141）垂直地生长在掩模层上方。 纳米芯包括棒部分（R），其包括杆表面（141a）和包括一个或多个表面（141b，141c）的尖端部分（T）。 有源层（143）从电子 - 空穴复合发射光。 通过覆盖有源层的表面形成第二半导体层（145）。
-
公开(公告)号：KR102198694B1
公开(公告)日：2021-01-06
申请号：KR1020140087465
申请日：2014-07-11
Applicant: 삼성전자주식회사
IPC: H01L33/22
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체로이루어진베이스층, 베이스층상에배치되며, 베이스층의일부가노출된복수의개구부를가지는마스크층, 및개구부상에배치되며, 각각제1 도전형반도체코어, 활성층및 제2 도전형반도체층을포함하는복수의나노발광구조물들을포함하고, 복수의나노발광구조물들은, 마스크층상의기둥형상의몸체부및 몸체부상에배치되는뿔 형상의상단부를포함하고, 복수의나노발광구조물들에서, 상단부의꼭짓점이몸체부의중심세로축으로부터몸체부의폭의 1.5 %의거리이내에배치되는비율이 60 % 이상이다.
-
-
Patent Agency Ranking
-
-
公开(公告)号：KR101916274B1
公开(公告)日：2018-11-07
申请号：KR1020130008311
申请日：2013-01-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/005 , H01L33/24
Abstract: 본발명은반도체발광소자및 그제조방법에관한것으로서, 기판; 상기기판상에형성된제1 도전형반도체베이스층; 상기제1 도전형반도체베이스층상에서로이격되어형성된복수의제1 도전형반도체코어와, 상기제1 도전형반도체코어의표면에순차적으로형성된활성층와제2 도전형반도체층을포함하는복수의나노발광구조물을포함하며, 상기나노발광구조물의측면에형성된상기제2 도전형반도체층부분은상기제1 도전형반도체코어의측면과다른결정면을가짐으로서, 반도체발광소자의광추출효율을향상시킬수 있는효과가있다.
-
公开(公告)号：KR101691906B1
公开(公告)日：2017-01-02
申请号：KR1020100090115
申请日：2010-09-14
Applicant: 삼성전자주식회사
Abstract: 본발명의일 실시예에따른 III족질화물나노로드발광소자의제조방법은기판을마련하는단계, 상기기판위에상기기판의일부분을노출하는적어도하나의개구를갖는절연막을형성하는단계, III족원소공급원가스와 N 공급원가스를공급하여상기개구에제1 도전형 III족질화물나노로드시드층을성장하는제1 성장공정단계, III족원소공급원가스및 불순물공급원가스를펄스모드로공급하고 N 공급원가스를지속적으로공급하여상기제1 도전형 III족질화물나노로드시드층위에제1 도전형 III족질화물나노로드를성장하는단계, 상기제1 도전형 III족질화물나노로드각각의표면에활성층을형성하는단계및 상기활성층의위에제2 도전형반도체층을형성하는단계를포함한다.
Abstract translation: 一种III族氮化物纳米棒发光器件及其制造方法。 该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒晶种层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续供应N源气体，形成氮 在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。
-
公开(公告)号：KR1020160008027A
公开(公告)日：2016-01-21
申请号：KR1020140087465
申请日：2014-07-11
Applicant: 삼성전자주식회사
IPC: H01L33/22
CPC classification number: H01L33/24 , H01L33/007 , H01L33/08 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: 본발명의실시예에따른반도체발광소자는, 제1 도전형반도체로이루어진베이스층, 베이스층상에배치되며, 베이스층의일부가노출된복수의개구부를가지는마스크층, 및개구부상에배치되며, 각각제1 도전형반도체코어, 활성층및 제2 도전형반도체층을포함하는복수의나노발광구조물들을포함하고, 복수의나노발광구조물들은, 마스크층상의기둥형상의몸체부및 몸체부상에배치되는뿔 형상의상단부를포함하고, 복수의나노발광구조물들에서, 상단부의꼭짓점이몸체부의중심세로축으로부터몸체부의폭의 1.5 %의거리이내에배치되는비율이 60 % 이상이다.
Abstract translation: 根据本发明实施例的半导体发光器件包括由第一导电类型半导体制成的基底层，掩模层，其布置在基底层上并具有用于暴露基底部分的开口部分， 布置在开口部分上并分别包括第一导电型半导体芯，有源层和第二导电型半导体芯的发光结构。 纳米发光结构包括在掩模层上的柱状体的主体部分和布置在主体部分上的锥形的上端部。 在纳米发光结构中，将上端部的顶点的距离为身体部分的中心纵轴的1.5％的距离的比率为60％以上。
-
-
-
-
-
-
-
-
-
Search Results
62
records
(took 0.02 seconds)
