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    고속 액세스 동작이 이루어지는 리던던시 회로
    33.
    发明授权
    고속 액세스 동작이 이루어지는 리던던시 회로 失效
    具有高速访问的冗余电路

    公开(公告)号：KR1019940006615B1

    公开(公告)日：1994-07-23

    申请号：KR1019920000760

    申请日：1992-01-20

    Applicant: 삼성전자주식회사

    Inventor： 김금룡 ,  석용식 ,  전동수

    IPC: G11C29/00

    Abstract: By arranging a block which consists of a normal memory cell and a redundant memory cell in a pair and selecting the upper block, this circuit provides a low redundancy circuit with high speed access operation. The RDi signal enables a normal word line and the RRDj signal does redundancy word line. The 0RREi and 0RREj signal enable sensing control boxes, i (90A) and j (90B) for each other. When the normal word line fails, this circuit cuts a fuse in fuse box i (60A), selects the redundancy word line at block j and loads a data value of IOi/IOj to the DIO data line.

    Abstract translation: 通过布置由正常存储器单元和冗余存储单元组成的块并选择上部块，该电路提供具有高速存取操作的低冗余电路。 RDi信号使能正常字线，RRDj信号进行冗余字线。 0RREi和0RREj信号使能感测控制盒i（90A）和j（90B）彼此。 当正常字线故障时，该电路切断保险丝盒i（60A）中的保险丝，在方框j选择冗余字线，并将数据值IOi / IOj加载到DIO数据线。

    반도체 메모리 장치의 클램퍼회로
    34.
    发明授权
    반도체 메모리 장치의 클램퍼회로 失效
    半导体存储器件钳位电路

    公开(公告)号：KR1019940006504B1

    公开(公告)日：1994-07-21

    申请号：KR1019910022108

    申请日：1991-12-04

    Applicant: 삼성전자주식회사

    Inventor： 최영권 ,  전동수

    IPC: G11C7/00

    Abstract: The excess voltage level of a certain node is clamped by transporting excessive voltage to other node. The clamper circuit includes a switch connected to a first and a second node. When a control signal is a first level, the switch is turned on so that the excessive charge on a first node is transported to a second node, and when a control signal is a second level, the switch is turned off so that the voltage level of a first node is not transported to a second node.

    Abstract translation: 通过将过高的电压传送到其他节点来钳位某个节点的过电压电平。 钳位电路包括连接到第一和第二节点的开关。 当控制信号是第一电平时，开关导通，使得第一节点上的过量电荷被传送到第二节点，并且当控制信号是第二电平时，开关被断开，使得电压电平 的第一节点不被传送到第二节点。

    반도체 메모리장치의 워드라인드라이버단 배치방법
    35.
    发明授权
    반도체 메모리장치의 워드라인드라이버단 배치방법 失效
    安排半导体存储器件的字线驱动器级的方法

    公开(公告)号：KR1019930008310B1

    公开(公告)日：1993-08-27

    申请号：KR1019910001964

    申请日：1991-02-05

    Applicant: 삼성전자주식회사

    Inventor： 민동선 ,  민경열 ,  전동수 ,  석용식

    IPC: G11C11/40

    CPC classification number: G11C8/14

    Abstract: The method is for memory array construction in high density memory device fabrication. When the number of strapping word lines between word line decoder and memory array increases, larger size of layout is needed and causes bad effects according to the word line extention. The method comprises: a word line driver unit divided at least 3 times and a word line from one word line driver connected the other line's neighbor line. As a practical example, a memory unit (100) which has four memory array block consists of a column decoder (300) and five allocated word line driver units and a row decoder (60). In this example, the word line driver units are divided by 5. As like it, minimum division number should be over 3.

    Abstract translation: 该方法用于高密度存储器件制造中的存储器阵列构造。 当字线解码器和存储器阵列之间的捆扎字线数量增加时，需要更大的布局尺寸，并根据字线延伸产生不良影响。 该方法包括：至少划分3次的字线驱动器单元和连接另一行的相邻行的一个字线驱动器的字线。 作为实例，具有四个存储器阵列块的存储器单元（100）由列解码器（300）和五个分配的字线驱动器单元和行解码器（60）组成。 在这个例子中，字线驱动单位除以5，如最小分割数应该超过3。

    기준전압 출력회로
    36.
    发明授权
    기준전압 출력회로 失效
    参考电压输出电路

    公开(公告)号：KR1019930007130B1

    公开(公告)日：1993-07-30

    申请号：KR1019900013417

    申请日：1990-08-29

    Applicant: 삼성전자주식회사

    Inventor： 민동선 ,  전동수 ,  조수인 ,  박용의

    IPC: G05F3/24

    Abstract: The circuit for supplying the stable ref. voltage to a MOS semiconductor IC comprises a distribution voltage output unit (10) including a resistor (R1) and MOS diodes (MD1,MD2,MD3) to generate first and second distribution voltages, a difference amplifier (OP1) including MOS transistors (P1,M4,N1,N2,N3) and receiving the unit (10) output and a reference voltage, and a ref. voltage output unit (20) for controlling the output of the amplifier (OP1) by using the first distribution voltage to output a stable ref. voltage. The stable reference voltage output is obtained by using the MOS transistors of the unit (20) having the resistance increased according to the rising of the temperature.

    Abstract translation: 供应稳定电路的电路 MOS半导体IC的电压包括：包括电阻器（R1）和MOS二极管（MD1，MD2，MD3）的分配电压输出单元（10），以产生第一和第二分配电压;差分放大器（OP1），包括MOS晶体管 ，M4，N1，N2，N3）和接收单元（10）的输出和参考电压。 电压输出单元（20），用于通过使用第一分配电压来输出稳定的参考值来控制放大器（OP1）的输出。 电压。 通过使用根据温度升高使电阻增加的单元（20）的MOS晶体管获得稳定的参考电压输出。

    미디어파일에 포함된 파일정보에 따라 광원을 구동하는전자장치 및 그 방법
    40.
    发明公开
    미디어파일에 포함된 파일정보에 따라 광원을 구동하는전자장치 및 그 방법 无效
    用于根据媒体文件中的文件信息驱动光源的电子装置及其方法

    公开(公告)号：KR1020080075318A

    公开(公告)日：2008-08-18

    申请号：KR1020070014305

    申请日：2007-02-12

    Applicant: 삼성전자주식회사

    Inventor： 박진용 ,  전동수 ,  강바다

    IPC: G11B19/02 ,  G11B20/10

    Abstract: An electron apparatus for driving a light source according to file information contained in a media file and a method thereof are provided to check file information of a media file and a light source driving method for selecting fixed colors and user setting based on the file information, thereby obtaining high visuality and design of the media file. A method for driving a light source according to file information contained in a media file comprises: checking whether a media file is started(S410); checking file information of the media file(S420); checking a light source driving method based on the checked file information and checking fixed colors and user setting based on the file information(S430); driving the light source based on the checked light source driving method(S440); and checking whether the media file play is finished(S450).

    Abstract translation: 提供根据媒体文件中包含的文件信息驱动光源的电子设备及其方法，用于根据文件信息来检查媒体文件的文件信息和用于选择固定颜色的光源驱动方法和用户设置， 从而获得媒体文件的高可视性和设计。 根据包含在媒体文件中的文件信息来驱动光源的方法包括：检查媒体文件是否开始（S410）; 检查媒体文件的文件信息（S420）; 基于所检查的文件信息检查光源驱动方法，并基于文件信息检查固定颜色和用户设置（S430）; 基于所检查的光源驱动方法驱动光源（S440）; 并检查媒体文件播放是否完成（S450）。

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