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公开(公告)号：KR1020120029339A
公开(公告)日：2012-03-26
申请号：KR1020110092511
申请日：2011-09-14
Applicant: 삼성전자주식회사
CPC classification number: H01L33/06 , H01L29/1606 , H01L33/16 , H01L33/34
Abstract: PURPOSE: A graphene emitting device and a manufacturing method thereof are provided to enhance luminous efficiency by enhancing reunion efficiency of an electron and a hole by using a graphene super lattice or a graphene quantum dot. CONSTITUTION: A p-type dopant is doped to p-type graphene(13). An n-type dopant is doped to n-type graphene(17). Activity graphene(15) is located between the p-type graphene and the n-type graphene. The activity graphene comprises a graphene super lattice. The graphene super lattice has a multiple quantum well potential. The graphene super lattice comprises one or more grapheme nano-ribbons which connect the n-type grapheme and the p-type grapheme. The p-type graphene, the n-type grapheme, and the activity graphene are horizontally arranged.
Abstract translation: 目的：提供石墨烯发光器件及其制造方法，以通过使用石墨烯超晶格或石墨烯量子点提高电子和空穴的团聚效率来提高发光效率。 构成：p型掺杂剂掺杂到p型石墨烯中（13）。 n型掺杂剂被掺杂到n型石墨烯（17）中。 活性石墨烯（15）位于p型石墨烯和n型石墨烯之间。 活性石墨烯包括石墨烯超晶格。 石墨烯超晶格具有多量子阱势。 石墨烯超晶格包括连接n型字形和p型字形的一个或多个图形纳米带。 水平排列p型石墨烯，n型图形和活性石墨烯。
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公开(公告)号：KR1020120029174A
公开(公告)日：2012-03-26
申请号：KR1020100091105
申请日：2010-09-16
Applicant: 삼성전자주식회사
CPC classification number: H01L51/50 , H01L51/5265 , H01L2251/305
Abstract: PURPOSE: A quantum dot light emitting device is provided to improve internal quantum efficiency by employing a non-polar surface quantum dot light emitting layer as a structure for controlling polarity effects. CONSTITUTION: An electron transport layer(130) is arranged on a substrate(110). The electron transport layer is comprised of a graphene layer in which n-type dopant is doped. The graphene layer comprises one or more graphene sheets. A quantum dot light emitting layer(150) which includes a plurality of quantum dots(152) is arranged on the electron transport layer. A hole transport layer(170) is arranged on the quantum dot light emitting layer. The hole transport layer is comprised of the graphene layer in which p-type dopant is doped.
Abstract translation: 目的：提供量子点发光器件，通过采用非极性表面量子点发光层作为控制极性效应的结构来提高内部量子效率。 构成：电子传输层（130）布置在衬底（110）上。 电子传输层由其中掺杂n型掺杂剂的石墨烯层组成。 石墨烯层包括一个或多个石墨烯片。 包括多个量子点（152）的量子点发光层（150）布置在电子传输层上。 在量子点发光层上配置空穴传输层（170）。 空穴传输层由掺杂p型掺杂剂的石墨烯层组成。
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公开(公告)号：KR1020110031631A
公开(公告)日：2011-03-29
申请号：KR1020090088961
申请日：2009-09-21
Applicant: 삼성전자주식회사
IPC: H01L33/12
Abstract: PURPOSE: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to improve light output by including a nitride based semiconductor layer which is grown with lateral epitaxy. CONSTITUTION: A sacrificial layer with a high wet etching property is formed on a sapphire substrate(210). A porous protection layer(230) is formed on a sacrificial layer and epitaxially grows a semiconductor layer. A low temperature growth nitride based semiconductor layer is formed on the porous protection layer. A high temperature growth nitride based semiconductor layer(250) is formed on the low temperature growth nitride based semiconductor layer. The substrate is separated from the nitride based semiconductor layer by wet-etching the sacrificial layer and the porous protection layer.
Abstract translation: 目的：提供氮化物半导体发光器件及其制造方法，通过包括用横向外延生长的氮化物基半导体层来提高光输出。 构成：在蓝宝石衬底（210）上形成具有高湿蚀刻性能的牺牲层。 在牺牲层上形成多孔保护层（230）并外延生长半导体层。 在多孔保护层上形成低温生长氮化物基半导体层。 在低温生长氮化物基半导体层上形成高温生长氮化物基半导体层（250）。 通过湿蚀刻牺牲层和多孔保护层，将衬底与氮化物基半导体层分离。
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Patent Agency Ranking
公开(公告)号：KR1020130139113A
公开(公告)日：2013-12-20
申请号：KR1020120062873
申请日：2012-06-12
Applicant: 삼성전자주식회사
CPC classification number: H01L33/08 , H01L33/06 , H01L33/14 , H01L33/405 , H01L33/44 , H01L33/52 , H01L2924/12041 , H01L2933/0058
Abstract: The present invention relates to a semiconductor light emitting device which includes: a plurality of light emitting units which are separately formed with a rod shape and include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are successively formed; and a filling layer which is made of conductive organic matter, covers the second conductive semiconductor layer, and fills a gap between the light emitting units.
Abstract translation: 本发明涉及一种半导体发光器件，其包括：多个单独形成为棒状的发光单元，包括依次形成的第一导电半导体层，有源层和第二导电半导体层; 以及由导电性有机物质构成的填充层，覆盖第二导电性半导体层，填充发光单元之间的间隙。
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公开(公告)号：KR101342664B1
公开(公告)日：2013-12-17
申请号：KR1020120010383
申请日：2012-02-01
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , B82Y10/00 , B82Y20/00 , B82Y99/00 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/42 , H01L2933/0016 , Y10S977/734
Abstract: 본발명의일실시예에따르면, n형반도체층;과상기 n형반도체층상부에배치되는활성층;과상기활성층상부에배치되며, p형 AlGaN으로이루어지는 p형반도체층; 및상기 p형반도체층상부에배치되며, p형도펀트가도핑된그래핀으로이루어지는 p형그래핀층;을포함함으로써, p형반도체층과의접촉저항을최소화하면서도, 자외선투과율을최대화하여발광효율을향상수 있는자외선발광소자를제공한다.
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公开(公告)号：KR1020130131217A
公开(公告)日：2013-12-03
申请号：KR1020130008121
申请日：2013-01-24
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/12041
Abstract: The present invention relates to a semiconductor light-emitting device, comprising: a substrate; multiple nanostructures, each of which includes a first conduction-type semiconductor layer core, an activation layer, and a second conduction-type semiconductor layer, spaced out on the substrate, a filler filling the gap between the multiple nanostructures and formed lower than the nanostructures; and a semiconductor light-emitting device, which includes an electrode covering the upper part and part of the sides of the nanostructures and electrically-connected to the second conduction-type semiconductor layer.
Abstract translation: 本发明涉及一种半导体发光器件，包括：衬底; 多个纳米结构，每个纳米结构包括在衬底上间隔开的第一导电型半导体层芯，激活层和第二导电型半导体层，填充多个纳米结构之间的间隙并形成为低于纳米结构的填料 ; 以及半导体发光器件，其包括覆盖所述纳米结构的上部和一部分侧边并电连接到所述第二导电型半导体层的电极。
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公开(公告)号：KR101274209B1
公开(公告)日：2013-06-17
申请号：KR1020110084831
申请日：2011-08-24
Applicant: 삼성전자주식회사
Abstract: 개시된 발광 소자는 제1전극과, 상기 제1전극 상에 마련되고, 각각이 pn 접합을 포함하는 복수 개의 탄소 나노구조물과, 상기 복수 개의 탄소 나노구조물 상에 마련된 제2전극을 포함하고, 상기 탄소 나노구조물은 제1도펀트로 도핑된 제1탄소 나노 구조물과 제2도펀트로 도핑된 제2탄소 나노구조물을 포함하는을 포함할 수 있다.
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公开(公告)号：KR1020130025856A
公开(公告)日：2013-03-12
申请号：KR1020120124475
申请日：2012-11-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/06 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/62 , H01L2924/12041
Abstract: PURPOSE: A nanorod light emitting device is provided to improve heat dissipation by using a reflective metal layer formed on a lighting nanorod. CONSTITUTION: A mask layer includes through holes. A lighting nanorod(140) includes a first doped semiconductor nanocore, an active layer(143), and a second doped semiconductor layer(120). The active layer surrounds the first doped semiconductor nanocore. A passivation layer(150) covers the corner part of the lighting nanorod. A reflective metal layer(160) is electrically connected to the first semiconductor layer and used as a first electrode. A second electrode is electrically connected to the semiconductor nanocore.
Abstract translation: 目的：提供纳米棒发光器件，通过使用形成在照明纳米棒上的反射金属层来改善散热。 构成：掩模层包括通孔。 照明纳米棒（140）包括第一掺杂半导体纳米孔，有源层（143）和第二掺杂半导体层（120）。 有源层围绕第一掺杂半导体纳米孔。 钝化层（150）覆盖照明纳米棒的角部。 反射金属层（160）电连接到第一半导体层并用作第一电极。 第二电极电连接到半导体纳米孔。
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