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公开(公告)号：KR101382607B1
公开(公告)日：2014-04-07
申请号：KR1020120119378
申请日：2012-10-26
Applicant: 성균관대학교산학협력단
IPC: H01L21/3065
CPC classification number: H01J37/32165 , H01J37/32532 , H01L21/67069
Abstract: Disclosed is etching equipment for a nanodevice. The etching equipment for a nanodevice comprises a main body part which includes an etching object material and etches the etching object material by using plasma which is generated by a pulse signal applied to a multi-electrode; a source power which applies each pulse signal with a different frequency to each multi-electrode; a bias power which applies the pulse signal to the etching object material; and a main control part which controls a clock signal applied to the bias power and the source power, and synchronizes the pulse signal applied to each multi-electrode with the pulse signal applied to a nanodevice substrate. [Reference numerals] (114) Gas; (120) Source power; (130) Bias power; (140) Main control part; (AA) Plasma
Abstract translation: 公开了一种纳米器件的蚀刻设备。 用于纳米器件的蚀刻设备包括：主体部分，其包括蚀刻对象材料，并且通过使用由施加到多电极的脉冲信号产生的等离子体蚀刻蚀刻对象材料; 源功率，其将每个具有不同频率的脉冲信号施加到每个多电极; 将脉冲信号施加到蚀刻对象材料的偏置功率; 以及主控制部分，其控制施加到偏置功率和源功率的时钟信号，并且将施加到每个多电极的脉冲信号与施加到纳米装置基板的脉冲信号同步。 （114）气体; （120）源功率; （130）偏压; （140）主控部分; （AA）等离子体
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公开(公告)号：KR1020090059884A
公开(公告)日：2009-06-11
申请号：KR1020070126968
申请日：2007-12-07
Applicant: 성균관대학교산학협력단
CPC classification number: H01J37/32669 , H01J37/3211 , H01J37/32174 , H05H1/46 , H05H2001/4667
Abstract: A plasma source and a plasma generating apparatus using the same are provided to concentrate a field of a radial shape to a substrate to be treated by mounting a ferrite structure on a linear type antenna. One linear antenna(21) forms a loop type by connecting one side of a first antenna of a linear type to one side of a second antenna of a linear type. A ferrite structure(23a) is positioned in each top part of the first antenna and the second antenna of the linear antenna. The ferrite structure concentrates a field formed into a radial type from the antenna to a specific direction. The ferrite structure is formed into an arch type.
Abstract translation: 提供了一种等离子体源和使用该等离子体源的等离子体产生装置，通过将铁氧体结构安装在线性天线上将径向形状的场域集中到待处理的基板上。 一个线性天线（21）通过将线性类型的第一天线的一侧连接到线性类型的第二天线的一侧来形成环路类型。 铁氧体结构（23a）位于第一天线的每个顶部和线性天线的第二天线中。 铁氧体结构将从天线形成的径向类型的场集中到特定方向。 铁氧体结构形成拱型。
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Patent Agency Ranking
公开(公告)号：KR1020170027097A
公开(公告)日：2017-03-09
申请号：KR1020150123588
申请日：2015-09-01
Applicant: 성균관대학교산학협력단
IPC: H01L51/56 , H01L21/268 , H01L21/02 , H01L51/52
Abstract: 본발명은박막형성방법에관한것으로, 복수의레이저소스를구비하는단계와; 소스가스를결정하는단계와; 상기소스가스에대응하는레이저소스를선택하는단계와; 상기소스가스를반응공간에공급하고플라즈마와선택된레이저소스로부터의레이저를이용하여대상체상에박막을형성하는단계를포함하는것을특징으로한다.
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公开(公告)号：KR101467093B1
公开(公告)日：2014-12-01
申请号：KR1020130042876
申请日：2013-04-18
Applicant: 성균관대학교산학협력단
IPC: H05H1/46
Abstract: 두께조절이가능한내부삽입형안테나및 이를이용한플라즈마발생장치가개시된다. 상기내부삽입형안테나는전극을포함하는안테나튜브의외주면을감싸는원통형의절연체를포함하며, 상기플라즈마발생장치는반응챔버의내측상단부에서로평행하게배치되는상기내부삽입형안테나를포함하여구성된다. 또한, 상기내부삽입형안테나는상기안테나튜브의길이방향에따라두께를달리하여생성되는플라즈마의밀도를조절할수 있다.
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公开(公告)号：KR1020140053472A
公开(公告)日：2014-05-08
申请号：KR1020120119405
申请日：2012-10-26
Applicant: 성균관대학교산학협력단
IPC: H05H1/34 , H05H1/46 , H01L21/3065
CPC classification number: H01J37/32568 , H01J37/32165 , H01J37/32174 , H01J37/3244 , H01J37/32541 , H01J37/32715 , H05H1/46 , H05H2001/4645
Abstract: Disclosed is a plasma generator. The plasma generator includes a main body for generating plasma through a pulse signal applied to a multi-electrode; a source power for applying pulse signals having mutually different frequencies to the multi-electrode; and a main control unit for adjusting a clock signal applied to the source power to synchronize the pulse signals applied to the multi-electrode so that the main control unit controls properties of the plasma by controlling the pulse signals to the source power.
Abstract translation: 公开了一种等离子体发生器。 等离子体发生器包括通过施加到多电极的脉冲信号产生等离子体的主体; 用于将具有相互不同频率的脉冲信号施加到所述多电极的源极功率; 以及主控制单元，用于调节施加到源功率的时钟信号，以使施加到多电极的脉冲信号同步，使得主控制单元通过将脉冲信号控制为源功率来控制等离子体的属性。
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公开(公告)号：KR101184859B1
公开(公告)日：2012-09-20
申请号：KR1020110028029
申请日：2011-03-29
Applicant: 성균관대학교산학협력단
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/321 , H01J37/32568 , H01J37/32825 , H05H2001/4652 , H05H2001/4675
Abstract: PURPOSE: A hybrid plasma source and a plasma generating apparatus using the same are provided to perform low pressure processing by forming an inductively coupled inner plasma source surrounding a capacitively coupled internal plasma source. CONSTITUTION: RF power is respectively connected to a first electrode(120), a second electrode(140), and one or more unit coils(220). An electric field is induced by applying the RF power to a first electrode and a second electrode. Reaction gas is inserted through a gas inlet installed at a lateral exterior wall(160) of a plasma generating device. The reaction gas is changed into a plasma state by the electric field induced inside a second space. Unit coils receiving power from the RF power generates the electric field. The electric field is left out in the second space. The induced electric field turns gas into plasma by generating discharge in the reaction gas inserted through the gas inlet.
Abstract translation: 目的：提供一种混合等离子体源和使用其的等离子体产生装置，以通过形成围绕电容耦合的内部等离子体源的电感耦合内部等离子体源来执行低压处理。 构成：RF功率分别连接到第一电极（120），第二电极（140）和一个或多个单元线圈（220）。 通过将RF功率施加到第一电极和第二电极来感应电场。 反应气体通过安装在等离子体产生装置的侧外壁（160）处的气体入口插入。 反应气体通过在第二空间内诱发的电场而变为等离子体状态。 从RF功率接收功率的单元线圈产生电场。 电场被留在第二个空间。 感应电场通过在气体入口插入的反应气体中产生放电而将气体变成等离子体。
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公开(公告)号：KR101021480B1
公开(公告)日：2011-03-16
申请号：KR1020070126968
申请日：2007-12-07
Applicant: 성균관대학교산학협력단
Abstract: 본 발명은 페라이트 구조체를 구비하는 플라즈마 소스 및 이를 채택하는 플라즈마 발생장치에 관한 것으로, 반응챔버의 내측 상부에 형성된 제1 안테나 및 제2 안테나의 일측을 연결한 루프형 선형안테나로부터 방사형으로 형성된 필드(field)를 상기 반응챔버 내부에 안착된 처리기판 방향으로 집중시키는 페라이트 구조체를 포함하는 구성을 마련한다.
상기와 같은 페라이트 구조체를 구비하는 플라즈마 소스 및 이를 채택하는 플라즈마 발생장치를 이용하는 것에 의해, 방사형으로 형성되는 필드(field)를 처리기판으로 집중시켜 전력손실을 줄이고, 반응챔버 내부에서 플라즈마의 밀도 및 균일도를 향상시켜 반도체 제조공정의 효율성 및 수율을 높일 수 있다.
선형안테나, 플라즈마, 페라이트, 유도코일
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