Abstract:
An AFM(Atomic Force Microscope) cantilever probe and a method for manufacturing the same are provided to facilitate setting of thickness of the cantilever with the microscopic probe and obtain desired natural resonance frequency of the cantilever. An AFM(Atomic Force Microscope) cantilever probe(200) comprises a handling part(240), a cantilever part(230), a probe part(210), and a probe(220). The handling part is made of a semiconductor substrate. The cantilever is elongated in bar-shape on the bottom of the handling part. The probe part, elongating on one side of the cantilever part, is shaped in vertically projected peak. The probe, provided on the peak of the probe part, makes contact with a surface of an analyzing object.
Abstract:
A probe of an AFM(Atomic Force Microscope) cantilever using a ferroelectric is provided to precisely measure the electric polarization of the ferroelectric by using the ferroelectric in the probe of the cantilever. A probe of an AFM(Atomic Force Microscope) cantilever using a ferroelectric includes a cantilever support(100), an insulation layer(110), a metal layer(120), and a ferroelectric(130). The insulation layer is formed on the cantilever support. The metal layer is formed on the insulation layer. The ferroelectric is formed at the tip head of the metal layer. The ferroelectric has a domain of 180 degrees. The ferroelectric uses a PZT.
Abstract:
본 발명은 단결정 기판과, 상기 단결정 기판 위에 증착되어 하부 전극으로 작용하며 고온 초전도 특성을 가지는 전도성 산화물 박막과, 상기 전도성 산화물 박막 위에 증착되는 강유전체 박막을 포함하는 초전도 전극을 이용한 나노스토리지 강유전체 매체구조에 관한 것이다. 본 발명에 따르면 나노스토리지 강유전체 매체구조에서 요구되는 특성인 표면 거칠기가 나노미터 정도일 것과 결정학적 정렬성이 우수할 것과 강유전체 도메인의 표면 전위가 충분히 클 것과 같은 조건을 만족하는 매체구조를 실현할 수 있다. 강유전체 박막, 고온 초전도 특성, 나노스토리지, 전도성 산화물, 전극
Abstract:
PURPOSE: A method for forming a channel of a cantilever for an atomic force microscope having an FET is provided to reduce a width of a channel of the cantilever without using an electric beam lithography process. CONSTITUTION: A method for forming a channel of a cantilever for an atomic force microscope having an FET includes forming a probe at a front end of the cantilever upwardly extending from a supporting part. A channel is formed at a lower region of the probe of the cantilever. At least two insulation layers(120) are stacked on an upper surface of a silicon layer(110) in which first conductive impurities are doped. The channel is formed at the silicon layer(110). The two insulation layers(120) are formed by using mutually different materials.
Abstract:
산화아연 나노와이어 압전필름 및 그 제조방법이 개시된다. 본 발명의 일실시예에 따른 산화아연 나노와이어 압전필름 및 그 제조방법은 유연기판; 유연기판 상에 마련되는 하부전극; 하부전극 상에 수직 성장되는 산화아연 나노와이어; 및 산화아연 나노와이어를 캐핑(capping)시키는 캐핑 레이어를 포함하고, 캐핑 레이어는 폴리실라잔, 실세스퀴옥산 및 실란 화합물을 포함하는 코팅액으로 형성된다.
Abstract:
The present invention relates to a planar heating element using zinc oxide nanoplates and a manufacturing method thereof. The planar heating element according to an embodiment of the present invention includes: a substrate; a heat emitting layer which is made of ZnO nanoplates on the substrate; and a protection layer which is formed on the top of the heat emitting layer. The present invention can provide the planar heating element configured to ensure even temperature distribution over the entire surface.