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公开(公告)号：KR1020110089120A
公开(公告)日：2011-08-04
申请号：KR1020110066431
申请日：2011-07-05
Applicant: 한국과학기술원
IPC: H01L21/205 , H01L21/3065 , H01L21/02
CPC classification number: C23C16/45565 , H01J37/32449 , H01L21/67028 , H01L21/67069
Abstract: PURPOSE: A fluid distribution apparatus and a fluid distribution method are provided to supply a spatially uneven flow rate, thereby securing a spatially uniform processing characteristic. CONSTITUTION: A first nozzle board(510) includes first nozzles. A second nozzle board includes second nozzles which have a smaller diameter than the first nozzle and located at one side of the first nozzle board. A guard part(530) is placed around the first nozzle board and second nozzle board in order to provide a buffer space and connected to a fluid supplying line. The first nozzle of the first nozzle board and the second nozzle are placed in order to be connected to each other. The second nozzle includes more than two different diameters depending on the location.
Abstract translation: 目的：提供流体分配装置和流体分配方法以提供空间不均匀的流速，从而确保空间上均匀的处理特性。 构成：第一喷嘴板（510）包括第一喷嘴。 第二喷嘴板包括具有比第一喷嘴更小的直径并且位于第一喷嘴板的一侧的第二喷嘴。 保护部件（530）围绕第一喷嘴板和第二喷嘴板放置，以便提供缓冲空间并连接到流体供应管线。 放置第一喷嘴板和第二喷嘴的第一喷嘴以便彼此连接。 根据位置，第二喷嘴包括多于两个不同的直径。
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公开(公告)号：KR1020110041352A
公开(公告)日：2011-04-21
申请号：KR1020090098459
申请日：2009-10-15
Applicant: 한국과학기술원
IPC: H01L21/3065 , H01L21/205 , H01L21/66
CPC classification number: H01J37/32935 , H01J37/3211
Abstract: PURPOSE: A measurement pattern structure, an adjustment structure, a substrate processing device, and a substrate processing method are provided to adjust a chamber according to a position by using the measurement pattern structure in contact with a dielectric unit of induced coupled plasma. CONSTITUTION: A substrate(10) is mounted on a substrate holder(110). A dielectric unit(120) is separated from the substrate holder to provide a plasma generation space. An antenna(130) is electrically connected to a power source(20) and supplies ion energy to the substrate by making plasma. A side pattern structure(140) includes a side pattern with a different structure according to a position.
Abstract translation: 目的：提供测量图案结构，调整结构，基板处理装置和基板处理方法，以通过使用与感应耦合等离子体的电介质单元接触的测量图案结构来根据位置来调节室。 构成：衬底（10）安装在衬底保持器（110）上。 电介质单元（120）与衬底保持器分离以提供等离子体产生空间。 天线（130）电连接到电源（20），并通过制造等离子体将离子能量提供给衬底。 侧面图案结构（140）包括根据位置具有不同结构的侧面图案。
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公开(公告)号：KR100978812B1
公开(公告)日：2010-08-30
申请号：KR1020080108383
申请日：2008-11-03
Applicant: 한국과학기술원
IPC: H01L21/027
CPC classification number: G03F9/70 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: 본 발명은 측정 패턴 구조체, 공정 패턴 구조체, 기판 처리 장치, 및 기판 처리 방법을 제공한다. 이 방법은 하나 이상의 단위 측정 패턴을 포함하는 측정 패턴 구조체를 제공하는 단계, 처리 용기에서 측정 패턴 구조체 상에 배치된 제1 기판을 처리하는 단계, 단위 측정 패턴의 위치에 따른 제1 기판의 균일 처리 영역을 선택하는 단계, 균일 처리 영역에 대응하는 측정 패턴 구조체의 구조를 공정 패턴 구조체에 전사(transfer)하는 단계, 및 단위 공정 패턴을 포함하는 공정 패턴 구조체를 이용하여 처리 용기에서 제2 기판을 처리하는 단계를 포함할 수 있다.
에너지 인가 구조체, 기판, 공정 불균일성, 공정 균일성, 에너지 전달 효율, 측정 패턴 구조체, 공정 패턴 구조체-
公开(公告)号：KR1020100049281A
公开(公告)日：2010-05-12
申请号：KR1020080108383
申请日：2008-11-03
Applicant: 한국과학기술원
IPC: H01L21/027
CPC classification number: G03F9/70 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: PURPOSE: A measuring pattern structure, a processing pattern structure, a substrate treatment apparatus and a substrate treatment method are provided to improve the uniformity of a manufacturing process using a non-uniformity which is obtained from the measuring pattern structure. CONSTITUTION: A measuring pattern structure(130) is prepared. The measuring pattern structure is interposed between a first substrate(140) and an energy application structure(110) which applies energy to the first substrate. The first substrate is treated in a treatment container(100). The uniform treatment region of the first substrate is selected based on the measuring pattern structure. The structure and/or the material of the measuring pattern structure which correspond to the uniform treatment region are transferred to a processing pattern structure.
Abstract translation: 目的：提供测量图案结构，处理图案结构，基板处理装置和基板处理方法，以提高使用从测量图案结构获得的不均匀性的制造工艺的均匀性。 构成：准备了测量图案结构（130）。 测量图案结构介于第一基板和施加能量到第一基板的能量施加结构（110）之间。 在处理容器（100）中处理第一衬底。 基于测量图案结构选择第一基板的均匀处理区域。 对应于均匀处理区域的测量图案结构的结构和/或材料被转移到处理图案结构。
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公开(公告)号：KR1020100018357A
公开(公告)日：2010-02-17
申请号：KR1020080077082
申请日：2008-08-06
Applicant: 한국과학기술원
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01J37/321 , H01J37/32183 , H01J37/32715
Abstract: PURPOSE: An apparatus and a method for processing a substrate are provided to control the energy of a neutral beam by generating a capacitively coupled plasma by forming a DLC(Diamond-like Carbon) layer containing an electrode part with a perceptible flatness. CONSTITUTION: A first power source part(112) supplies RF power. A first matching circuit part(172) is connected in series with the first power source part. A chamber part(100) forms a vacuum. An electrode part(130) is electrically connected to the first matching circuit part and is arranged in the chamber part. A DLC layer(140) is formed on the surface of the electrode part. The neutral beam extract unit(150) passes through a neutralized beam from the DLC layer.
Abstract translation: 目的：提供一种用于处理衬底的装置和方法，以通过形成含有可感知平坦度的电极部分的DLC（类金刚石碳）层来产生电容耦合等离子体来控制中性束的能量。 构成：第一电源部分（112）提供RF功率。 第一匹配电路部分（172）与第一电源部分串联连接。 室部件（100）形成真空。 电极部分（130）电连接到第一匹配电路部分并且被布置在腔室部分中。 DLC层（140）形成在电极部分的表面上。 中性束提取单元（150）通过来自DLC层的中和束。
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Patent Agency Ranking
公开(公告)号：KR1020080074587A
公开(公告)日：2008-08-13
申请号：KR1020070013900
申请日：2007-02-09
Applicant: 삼성디스플레이 주식회사 , 한국과학기술원
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01J37/3299 , H01J37/32935
Abstract: An apparatus and a method for processing plasma is provided to apply different bias powers to every block of a lower electrode according to plasma density values measured at every section in real time. A lower electrode(30) is arranged on a lower side in a vacuum chamber(10). An upper electrode is arranged on an upper side in the vacuum chamber to be grounded. A power gas supply unit supplies process gas into the vacuum chamber. A source power supply unit is connected to the lower electrode to apply source power. A bias power supply unit is individually connected to each block of the lower electrode to apply bias power to each block independently. A control unit(80) calculates bias power applied to each block of the lower electrode and controls the bias power supply unit. An insulator is arranged between blocks of the lower electrode to insulate each block. The insulator is made of ceramic.
Abstract translation: 提供了一种用于处理等离子体的装置和方法，以根据实时测量的每个部分的等离子体密度值向下电极的每个块施加不同的偏置功率。 下电极（30）设置在真空室（10）的下侧。 上电极布置在真空室的上侧以接地。 动力气体供应单元将处理气体供应到真空室中。 源电源单元连接到下电极以施加电源。 偏置电源单元分别连接到下电极的每个块，以独立地向每个块施加偏置功率。 控制单元（80）计算施加到下电极的每个块的偏置功率并控制偏置电源单元。 绝缘体布置在下电极的块之间以使每个块绝缘。 绝缘体由陶瓷制成。
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公开(公告)号：KR100338057B1
公开(公告)日：2002-05-24
申请号：KR1019990035702
申请日：1999-08-26
Applicant: 주성엔지니어링(주) , 한국과학기술원
IPC: H01Q1/27
CPC classification number: H01J37/321 , H05H1/46
Abstract: 본발명은대면적의시료를가공할수 있는대규모의유도결합플라즈마를발생하기위한저 임피던스의안테나장치를제공하며, 발생된플라즈마의밀도분포가균일하도록조절할수 있는안테나장치를제공하기위하여, 대규모의플라즈마를생성하기위한플라즈마발생장치를위한안테나장치에있어서, 고주파전원; 상기고주파전원으로부터고주파전력을공급받는제 1 안테나; 및상기고주파전원으로부터고주파전력을공급받으며상기제 1 안테나와병렬접속되되, 상기제 1 안테나와의사이에서공진상태를유지하는제 2 안테나를포함하는안테나장치를제공한다.
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公开(公告)号：KR1020170095173A
公开(公告)日：2017-08-22
申请号：KR1020170097290
申请日：2017-07-31
Applicant: 한국과학기술원 , 주성엔지니어링(주)
IPC: H05H1/46 , H05H1/34 , H01L21/205 , H01L21/3065
CPC classification number: H05H1/46 , H01L21/205 , H01L21/3065 , H05H1/34
Abstract: 본발명은플라즈마발생장치및 기판처리장치를제공한다. 이플라즈마발생장치는상판을포함하는진공용기, 상판의하부에배치되고공정가스를토출하는복수의노즐들을포함하는가스분배부, 가스분배부의하부에배치되고제1 방향으로나란히연장되는절연지지부들, 가스분배부의하부에배치되고상기제1 방향으로나란히연장되는접지전극들, 절연지지부의하부에배치되고접지전극들사이에서제1 방향으로나란히연장되는전원전극들, 및가스분배부및 절연지지부를관통하여전원전극들에 RF 전력을공급하는전력공급부를포함한다.
Abstract translation: 本发明提供一种等离子体产生装置和基板处理装置。 的等离子体生成装置包括：真空容器，设置在所述顶板的下方分布气体分钟，包括用于喷射处理气体的多个喷嘴，设置在气体分布部分的底部和侧面由在第一方向上延伸的侧上的绝缘纸部分包括顶板 ，气体分配部底部被设置在所述第一方向上延伸的接地电极侧，在其中设置在绝缘纸部分底部并通过在接地电极电源电极之间的第一方向延伸的侧边，和一气体分配器与该绝缘纸部 以及用于向电源电极供应RF功率的电源单元。
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公开(公告)号：KR101765323B1
公开(公告)日：2017-08-04
申请号：KR1020120115539
申请日：2012-10-17
Applicant: 한국과학기술원 , 주성엔지니어링(주)
Abstract: 본발명은플라즈마발생장치및 기판처리장치를제공한다. 이플라즈마발생장치는상판을포함하는진공용기, 상판의하부에배치되고공정가스를토출하는복수의노즐들을포함하는가스분배부, 가스분배부의하부에배치되고제1 방향으로나란히연장되는절연지지부들, 가스분배부의하부에배치되고상기제1 방향으로나란히연장되는접지전극들, 절연지지부의하부에배치되고접지전극들사이에서제1 방향으로나란히연장되는전원전극들, 및가스분배부및 절연지지부를관통하여전원전극들에 RF 전력을공급하는전력공급부를포함한다.
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公开(公告)号：KR101738718B1
公开(公告)日：2017-05-22
申请号：KR1020130056191
申请日：2013-05-20
Applicant: 한국과학기술원
IPC: H05H1/34
Abstract: 본발명은축전결합플라즈마발생용전극구조체및 기판처리장치를제공한다. 이전극구조체는 RF 전원으로부터임피던스매칭네트워크를통하여전력을공급받고진공용기의내부에축전결합플라즈마를형성하는사각형전극, 및사각형전극의중심에대하여대칭적으로배치되고사각형전극을관통하는적어도 4개의트렌치를포함한다.
Abstract translation: 本发明提供了一种用于产生电容耦合等离子体的电极结构和一种衬底处理设备。 以前极结构被对称地设置相对于一个长方形的电极的中心，和用于通过从RF电源的阻抗匹配网络接收电力的供给的矩形电极，形成在所述真空室内部的电容耦合等离子体和至少四个穿透矩形电极 和沟槽。
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