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公开(公告)号：KR1020110091361A
公开(公告)日：2011-08-11
申请号：KR1020100011166
申请日：2010-02-05
Applicant: 한국기계연구원
Abstract: PURPOSE: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell is provided to improve size uniformity of particles, productivity, and coating uniformity of ZnS shell and to reduce the reaction time. CONSTITUTION: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell comprises (S10) forming an indium phosphide core and (S20) forming a Group II-VI compound semiconductor shell on the surface of the indium phosphide core using a monomolecular precursor which includes Group II elements and includes Group VI elements at the same time and enables the formation the Group II-VI compound by being degraded in the heating to the predetermined temperature or more.
Abstract translation: 目的：提供一种制备涂有II-VI族化合物壳的磷化铟量子点的方法，以改善粒子的尺寸均匀性，生产率和ZnS壳的涂层均匀性，并减少反应时间。 构成：用于制造涂覆有II-VI族化合物壳的铟磷化物量子点的方法包括：（S10）形成磷化铟核，和（S20）在磷化铟芯的表面上形成II-VI族化合物半导体外壳，使用 包括II族元素并且同时包含VI族元素的单分子前体，并且能够通过在加热中降解至预定温度或更高而形成II-VI族化合物。
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公开(公告)号：KR101003807B1
公开(公告)日：2010-12-23
申请号：KR1020080059031
申请日：2008-06-23
Applicant: 한국기계연구원
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 나노 소재를 포함하는 투명한 태양 전지에 관한 것으로서, 광투과성 기판과, 상기 광투과성 기판 상에 형성된 제1 투명 전극과, 상기 투명 전극 상에 형성된 PN 접합 반도체층, 및 상기 PN접합 반도체층 상에 형성된 제2 투명 전극을 포함하며, 상기 PN접합 반도체층은 반도체성을 갖는 나노 와이어(nano wire), 나노 튜브(nano tube), 또는 나노 파티클(nano particle)을 포함하는 나노 소재를 포함한다. 이 때, PN접합 반도체층을 얇게 형성하여 투명한 태양 전지를 제공할 수 있다.
태양 전지, 나노 소재, 나노 와이어, 나노 튜브-
公开(公告)号：KR1020100089606A
公开(公告)日：2010-08-12
申请号：KR1020090008936
申请日：2009-02-04
Applicant: 한국기계연구원
CPC classification number: H01L51/5092 , B82Y30/00 , H01L27/322 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/5088
Abstract: PURPOSE: A display device is provided to improve light emitting efficiency by forming a color conversion layer which converts light into various colors into a plurality of nano quantum dots. CONSTITUTION: An anode layer(10) is formed on a substrate in a predetermined pattern. A color filter(11) is formed on the anode layer. A color conversion layer(12) is formed on the color filter. A hole injection/transmission layer(13) is formed on the color conversion layer. A light emitting layer(14) is formed on the hole injection/transmission layer. A cathode layer(16) is formed on the light emitting layer.
Abstract translation: 目的：提供一种显示装置，通过形成将光转换为多种颜色的多个纳米量子点的颜色转换层来提高发光效率。 构成：以预定图案在基板上形成阳极层（10）。 在阳极层上形成滤色器（11）。 在滤色器上形成颜色转换层（12）。 在颜色转换层上形成空穴注入/透射层（13）。 在空穴注入/透射层上形成发光层（14）。 在发光层上形成阴极层（16）。
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公开(公告)号：KR1020090132850A
公开(公告)日：2009-12-31
申请号：KR1020080059031
申请日：2008-06-23
Applicant: 한국기계연구원
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/06 , H01L31/18
Abstract: PURPOSE: A transparent solar cell and a manufacturing method thereof are provided to secure transparency stably by forming a PN junction semiconductor layer made of the semiconductor nano material. CONSTITUTION: A first transparent electrode(123) is formed on an optical light transmission substrate(121). A PN junction semiconductor layer(130) is formed on a first transparent electrode. A PN junction semiconductor layer includes a semiconductor nano wire, a nano tube, or a nano particle. The PN junction semiconductor layer includes a P type semiconductor layer(132) and an N type semiconductor(134). A second transparent electrode(125) is formed on the PN junction semiconductor layer. The first and second transparent electrodes are connected to the PN junction semiconductor layer by Schottky junction.
Abstract translation: 目的：提供透明太阳能电池及其制造方法，以通过形成由半导体纳米材料制成的PN结半导体层来稳定地确保透明性。 构成：在光传输基板（121）上形成第一透明电极（123）。 在第一透明电极上形成PN结半导体层（130）。 PN结半导体层包括半导体纳米线，纳米管或纳米颗粒。 PN结半导体层包括P型半导体层（132）和N型半导体（134）。 第二透明电极（125）形成在PN结半导体层上。 第一和第二透明电极通过肖特基结连接到PN结半导体层。
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公开(公告)号：KR1020090113537A
公开(公告)日：2009-11-02
申请号：KR1020080039304
申请日：2008-04-28
Applicant: 한국기계연구원
Abstract: PURPOSE: A wavelength detection apparatus and a manufacturing method thereof are provided to increase the reactivity, reduce the noise ratio and improve the reliability. CONSTITUTION: A wavelength detection apparatus includes a housing, a transparent window, and sensing elements(110,120). An opening is formed at one side of the housing. The transparent window is installed in the opening. The sensing elements react with an incident beam and make a current flow. The sensing elements include nano sensitive bodies(114,124), electrodes(112,122), power supply units(118,128), and ammeters(116,126). A substrate is installed in the housing. The nano sensitive bodies are installed on the substrate.
Abstract translation: 目的：提供一种波长检测装置及其制造方法，以提高反应性，降低噪声比并提高可靠性。 构成：波长检测装置包括壳体，透明窗口和感测元件（110,120）。 在壳体的一侧形成开口。 透明窗口安装在开口中。 感测元件与入射光束反应并产生电流。 感测元件包括纳米敏感体（114,124），电极（112,122），电源单元（118,128）和电流表（116,126）。 基板安装在壳体中。 纳米敏感体安装在基底上。
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Patent Agency Ranking
公开(公告)号：KR1020090005899A
公开(公告)日：2009-01-14
申请号：KR1020070069317
申请日：2007-07-10
Applicant: 한국기계연구원
Abstract: A method for improving sensitivity of a gas sensor is provided to improve the gas reaction property by regulating applied voltage over the specific level. A nano material gas sensor comprises a substrate(11), an insulating layer(12) formed on the top of the substrate, electrodes(13) formed on the insulating layer, a nano material(14) provided between the electrodes, a voltage supplier(2) applying signal voltage between the electrodes, and an electrical characteristic measuring apparatus(3) for measuring the resistance variation. A method for improving sensitivity of the gas sensor comprises a step for adjusting the voltage applied between the electrodes over the specific level through adjustment of Schottky barrier between the electrode and the nano material at the normal temperature and normal pressure in order to maximize the reaction of specific gas about nanotube.
Abstract translation: 提供了一种提高气体传感器灵敏度的方法，通过调节施加在特定水平上的电压来改善气体反应性能。 纳米材料气体传感器包括基板（11），形成在基板顶部的绝缘层（12），形成在绝缘层上的电极（13），设置在电极之间的纳米材料（14），电压供应器 （2）在电极之间施加信号电压，以及用于测量电阻变化的电特性测量装置（3）。 一种用于提高气体传感器的灵敏度的方法包括通过在正常温度和常压下调节电极和纳米材料之间的肖特基势垒来调节在特定电平之间施加的电压之间的步骤，以使 关于纳米管的比气体。
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公开(公告)号：KR101264367B1
公开(公告)日：2013-05-14
申请号：KR1020120076844
申请日：2012-07-13
Applicant: 한국기계연구원
IPC: H01L31/04 , H01L31/0224 , H01L31/0216
CPC classification number: Y02E10/50 , H01L31/04 , H01L31/0216 , H01L31/0224
Abstract: PURPOSE: A photoelectric element having a transparent conductive antireflection film is provided to reduce the resistance between a front electrode and an emitter by forming an antireflection layer made of transparent conducting oxide. CONSTITUTION: An emitter layer(23) is formed on a semiconductor substrate(21). An antireflection layer(13) made of transparent conducting oxide is formed on the emitter layer. A front electrode(31) made of metal is formed on the antireflection layer. The front electrode is partly inserted into the antireflection layer. A rear electrode(12) is formed in the lower part of the semiconductor substrate.
Abstract translation: 目的：提供具有透明导电抗反射膜的光电元件，通过形成由透明导电氧化物制成的抗反射层，以减小前电极和发射极之间的电阻。 构成：在半导体衬底（21）上形成发射极层（23）。 在发射极层上形成由透明导电氧化物构成的抗反射层（13）。 在防反射层上形成由金属制成的前电极（31）。 前电极部分插入防反射层。 在半导体衬底的下部形成有后电极（12）。
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公开(公告)号：KR101120009B1
公开(公告)日：2012-03-16
申请号：KR1020110077512
申请日：2011-08-03
Applicant: 한국기계연구원
IPC: H01L31/06 , H01L31/042 , H01L31/18
CPC classification number: Y02E10/50 , H01L31/06 , H01L31/042 , H01L31/18
Abstract: PURPOSE: A solar cell with nano protrusions and a manufacturing method thereof are provided to improve photoelectric conversion efficiency by widening an area of a light absorbing layer. CONSTITUTION: A PN junction semiconductor layer(10) includes a P type semiconductor layer(12) and an N type semiconductor layer(13). The PN junction semiconductor layer is comprised of crystalline wafers. A plurality of nano protrusions(31) are formed on the PN junction semiconductor layer. A transparent semiconductor layer(32) is bonded with the nano protrusion with a PN-junction. A front electrode(23) is formed on the transparent semiconductor layer.
Abstract translation: 目的：提供具有纳米突起的太阳能电池及其制造方法，以通过加宽光吸收层的面积来提高光电转换效率。 构成：PN结半导体层（10）包括P型半导体层（12）和N型半导体层（13）。 PN结半导体层由晶体晶片组成。 在PN结半导体层上形成多个纳米突起（31）。 透明半导体层（32）用纳米突起与PN结结合。 在透明半导体层上形成前电极（23）。
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公开(公告)号：KR1020110121933A
公开(公告)日：2011-11-09
申请号：KR1020100041452
申请日：2010-05-03
Applicant: 한국기계연구원
Abstract: PURPOSE: A photodetector is intended to provide excellent sensitivity and high response speed by applying bias voltage set. CONSTITUTION: A photodetector comprises a substrate(112), a first metallic electrode(115), a second metallic electrode(116), a nano susceptor(118), a power supply unit(120), and an ammeter(130). The substrate has a board form. The second metallic electrode is arranged at an interval from the first electrode. The nano susceptor makes schottky junction to the first electrode and makes ohmic junction to the second electrode. The power supply unit is electrically connected to the metallic electrodes and applies bias voltage. The ammeter is electrically connected to the metallic electrodes.
Abstract translation: 目的：光电检测器旨在通过施加偏置电压设置提供极好的灵敏度和高响应速度。 构成：光电检测器包括基板（112），第一金属电极（115），第二金属电极（116），纳米感受器（118），电源单元（120）和电流计（130）。 基板具有板形式。 第二金属电极与第一电极间隔设置。 纳米感受器与第一电极形成肖特基结，并与第二电极形成欧姆结。 电源单元电连接到金属电极并施加偏置电压。 电流表电连接到金属电极。
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公开(公告)号：KR101068646B1
公开(公告)日：2011-09-28
申请号：KR1020090044131
申请日：2009-05-20
Applicant: 한국기계연구원
CPC classification number: Y02E10/50
Abstract: 본 발명에 따른 쇼트키 접합 태양 전지는 광효율을 향상시킬 수 있도록 기판과, 나노 소재를 포함하는 나노소재 반도체층과, 상기 나노소재 반도체층으로부터 정공을 전달 받으며 상기 나노소재 반도체층의 일함수보다 더 큰 일함수를 갖는 제1 전극, 및 상기 나노소재 반도체층으로부터 전자를 전달 받으며, 나노소재 반도체층의 일함수보다 더 작은 일함수를 갖는 제2 전극을 포함하고, 상기 제1 전극과 상기 제2 전극은 교대로 배치된다.
본 발명의 일 실시예에 따른 쇼트키 접합 태양 전지의 제조 방법은 기판 준비 단계와, 상기 기판 상에 제1 전극 또는 제2 전극 중 어느 하나의 전극을 형성하고 형성된 전극을 패터닝하며, 패턴된 전극 사이에 다른 전극을 형성하는 전극 형성 단계와, 상기 기판 상에 나노소재 반도체층을 형성하는 나노소재 반도체층 형성 단계를 포함하고, 상기 제1 전극은 상기 나노소재 반도체층보다 일함수가 더 큰 물질로 이루어지며, 상기 제2 전극은 상기 나노소재 반도체층보다 일함수가 더 작은 물질로 이루어진다.
쇼트키 접합 태양 전지, 나노 소재, 쇼트키, 오믹
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