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公开(公告)号：KR1020170098521A
公开(公告)日：2017-08-30
申请号：KR1020160020540
申请日：2016-02-22
Applicant: 한국전자통신연구원
Abstract: 본발명은레이저특성을개선할수 있도록한 파장가변레이저장치에관한것이다. 본발명의실시예에의한파장가변레이저장치는광신호를출력하는이득부와; 상기이득부의일측에위치되며, 상기광신호를제 1파장간격으로반사하는제 1회절격자반사기와; 상기이득부의타측에위치되며, 상기광신호를제 2파장간격으로반사하는제 2회절격자반사기와; 상기이득부와상기제 2회절격자반사기사이에위치되며, 제 3파장간격의광신호만이출력되도록제어하는광필터를구비한다.
Abstract translation: 本发明涉及能够改善激光特性的波长可调激光装置。 根据本发明实施例的可调谐激光装置包括：用于输出光信号的增益单元; 第一衍射光栅反射器，其位于增益部分的一侧并以第一波长间隔反射光信号; 位于增益部分的另一侧并且以第二波长间隔反射光信号的第二衍射光栅反射器; 以及位于增益部分和第二衍射光栅反射器之间并被配置为仅输出具有第三波长间隔的光信号的滤光器。
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公开(公告)号：KR1020140029564A
公开(公告)日：2014-03-11
申请号：KR1020120094258
申请日：2012-08-28
Applicant: 한국전자통신연구원
IPC: G02B6/42
CPC classification number: G02B6/4274 , G02B6/4249 , G02B6/4263 , G02B6/4279
Abstract: The present invention relates to a multi-channel receiver optical sub assembly, including: a multi-channel PD array in which a number of photo diodes (PD) which are arranged on a first capacitor and include a receiver part arranged on the center and an anode electrode pad arranged in an opposite direction of 180° between PDs adjacent to the receiver part are monolithic-integrated; a number of transimpedance amplifiers (TIA) which are arranged on a number of second capacitors, and are connected to the anode electrode pad of each PD through wire bonding; a sub mount in which the first capacitor, the second capacitors and a number of transmisson lines are embedded; and a transistor outline (TO) comprising a plurality of pins including a power pin to supply a power source voltage to the multiple PDs and the multiple TIAs through the multiple transmission lines, a ground pin to supply a ground voltage to the multiple TIAs and an output pin to output a signal of the multiple TIAs. The sub mount is embedded in the TO.
Abstract translation: 本发明涉及一种多通道接收机光学子组件，其包括：多通道PD阵列，其中布置在第一电容器上并包括布置在中心的接收器部分的多个光电二极管（PD）和 在与接收器部分相邻的PD之间以相反方向180°布置的阳极电极焊盘是单片集成的; 多个跨阻放大器（TIA），其布置在多个第二电容器上，并且通过引线接合连接到每个PD的阳极电极焊盘; 其中嵌入有第一电容器，第二电容器和多个透射线; 以及包括多个引脚的晶体管轮廓（TO），所述多个引脚包括电源引脚，以通过所述多个传输线向所述多个PD提供电源电压和所述多个TIA;接地引脚，用于向所述多个TIA提供接地电压，以及 输出引脚输出多个TIA的信号。 子安装座嵌入到TO中。
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公开(公告)号：KR1020120134347A
公开(公告)日：2012-12-12
申请号：KR1020110053198
申请日：2011-06-02
Applicant: 한국전자통신연구원
CPC classification number: H01L33/005 , B82Y20/00 , G02B6/305 , G02B6/4206 , H01L33/0045 , H01L33/20 , H01L2933/0016 , H01L2933/0058 , H01S5/02216 , H01S5/02284 , H01S5/026 , H01S5/06226 , H01S5/101 , H01S5/1014 , H01S5/141 , H01S5/2213 , H01S5/2224 , H01S5/2231 , H01S5/34306 , H01S2301/176
Abstract: PURPOSE: A super luminescent diode, a manufacturing method thereof, and a wavelength-tunable external resonance laser including the same are provided to minimize parasitic capacitance between an active layer and a pad using a flat layer of a polyimide material. CONSTITUTION: An active waveguide(30) is formed in an active region(12) on a substrate(10). A junction waveguide(50) is formed at an optical mode changing region(14) A flat layer(40) includes polyimide or a polymer BCB(benzocyclobutene). A first pad(44) can be arranged on the top of the flat layer. The first pad is connected to an upper electrode(42) on the active waveguide. The flat layer minimizes the parasitic capacitance between the first pad and the active waveguide. The active waveguide generates laser light with currents which are applied to an upper electrode and the first pad.
Abstract translation: 目的：提供超级发光二极管及其制造方法以及包括该超发光二极管的波长可调谐外部谐振激光器，以使聚酰亚胺材料的平坦层中的有源层和焊盘之间的寄生电容最小化。 构成：在衬底（10）上的有源区（12）中形成有源波导（30）。 在光学模式改变区域（14）处形成结波导（50）。平坦层（40）包括聚酰亚胺或聚合物BCB（苯并环丁烯）。 第一垫（44）可以布置在平坦层的顶部上。 第一焊盘连接到有源波导上的上电极（42）。 平坦层使第一焊盘和有源波导之间的寄生电容最小化。 有源波导产生具有施加到上电极和第一焊盘的电流的激光。
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公开(公告)号：KR1020120057343A
公开(公告)日：2012-06-05
申请号：KR1020100119030
申请日：2010-11-26
Applicant: 한국전자통신연구원
CPC classification number: H01S5/141 , H01S3/07 , H01S3/08027 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/4062 , H01S2301/16
Abstract: PURPOSE: A light generating device is provided to improve reliability by preventing resonance of noise components. CONSTITUTION: A light generating device(100) comprises first and second reflective semiconductor optical amplifiers(111,113), lenses(121,123,125,127), an optical comb filter(130), and an optical distributor(140). The first reflective semiconductor optical amplifier emits first light along a first direction. The second reflective semiconductor optical amplifier faces with the first reflective semiconductor optical amplifier and emits second light to an opposite direction of the first direction. The optical distributor is formed between the first and second reflective semiconductor optical amplifiers. The optical distributor reflects parts of incidence light and perforates the rest of the light. The optical comb filter is formed between the optical distributor and the first reflective semiconductor optical amplifier and perforates wavelength components of a specific cycle.
Abstract translation: 目的：提供一种发光装置，通过防止噪声成分的共振来提高可靠性。 构成：发光装置（100）包括第一和第二反射半导体光放大器（111,113），透镜（121,123,125,127），光梳滤波器（130）和光分配器（140）。 第一反射半导体光放大器沿着第一方向发射第一光。 第二反射半导体光放大器与第一反射半导体光放大器面对，并将第二光发射到与第一方向相反的方向。 光分配器形成在第一和第二反射半导体光放大器之间。 光学分配器反映入射光的一部分并穿透其余的光。 光梳状滤波器形成在光分配器和第一反射半导体光放大器之间并穿孔特定周期的波长分量。
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Patent Agency Ranking
公开(公告)号：KR1020120047042A
公开(公告)日：2012-05-11
申请号：KR1020100108685
申请日：2010-11-03
Applicant: 한국전자통신연구원
IPC: H01L31/10 , H01L21/306 , H01L21/20
CPC classification number: H01L31/107 , H01L31/02027 , H01L31/02161 , H01L31/184 , Y02E10/544
Abstract: PURPOSE: An avalanche photodiode and a forming method thereof are provided to improve the receiving sensitivity of a avalanche photodiode by accurately controlling an amplification factor with avalanche amplification. CONSTITUTION: A compound semiconductor absorbing layer(202) is formed on a substrate(200). A compound semiconductor grading layer(204) is formed on the compound semiconductor absorbing layer. A charge sheet layer(207) is formed on the compound semiconductor grading layer. A compound semiconductor amplification layer(209) is formed on the charge sheet layer. An dielectric layer(230) is formed on the compound semiconductor amplification layer.
Abstract translation: 目的：提供雪崩光电二极管及其形成方法，以通过雪崩放大精确控制放大系数来提高雪崩光电二极管的接收灵敏度。 构成：在基板（200）上形成化合物半导体吸收层（202）。 在化合物半导体吸收层上形成化合物半导体分级层（204）。 在化合物半导体分级层上形成电荷层（207）。 在充电片层上形成化合物半导体放大层（209）。 在化合物半导体放大层上形成介电层230。
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公开(公告)号：KR101086777B1
公开(公告)日：2011-11-25
申请号：KR1020090080500
申请日：2009-08-28
Applicant: 한국전자통신연구원
IPC: G02B6/12
Abstract: 본 발명에 따른 광증폭기는, 입사된 광신호를 입력받아 모드를 조절하는 수동 도파로 영역, 및 상기 수동 도파로 영역에 연결되고, 인가되는 전류에 의해 운반자의 농도를 가변함으로써 상기 수동 도파로 영역을 통과한 광신호의 이득을 변조하는 능동 도파로 영역을 형성하는 것을 포함하되, 상기 능동 도파로 영역은, 내부 손실 조절을 통한 공진 현상을 발생시킴으로써, 대역폭을 확장시킬 수 있게 된다. 이로써, 본 발명에 따른 광증폭기는 저전류에서도 넓은 주파수 대역폭을 확보할 수 있다.
SOA, RSOA, 내부 손실, 대역폭, 공진현상-
公开(公告)号：KR1020110041221A
公开(公告)日：2011-04-21
申请号：KR1020090098292
申请日：2009-10-15
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for manufacturing a quantum dot using a patterned strained layer and a quantum dot semiconductor device made by the same are provided to form the quantum dot with high uniformity and density by using the patterned strained layer as a seed layer. CONSTITUTION: A patterned strained layer(530a) and a patterned first capping layer(550a) are formed on a substrate(510) by patterning the first capping layer and the strained layer using an etching mask. A second capping layer(570) is formed after the first capping layer and the strained layer are patterned with a lattice format. A quantum dot forming material is formed on the upper side of the second capping layer. A plurality of self-formed quantum dots(590a) are formed on the upper side of the second capping layer.
Abstract translation: 目的：提供一种使用图案化的应变层制造量子点的方法及其制造的量子点半导体器件，通过使用图案化的应变层作为种子层，形成具有高均匀性和密度的量子点。 构成：通过使用蚀刻掩模图案化第一覆盖层和应变层，在衬底（510）上形成图案化的应变层（530a）和图案化的第一覆盖层（550a）。 在第一覆盖层之后形成第二覆盖层（570），并且使用晶格格式对应变层进行图案化。 量子点形成材料形成在第二封盖层的上侧。 多个自形成量子点（590a）形成在第二封盖层的上侧。
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公开(公告)号：KR100958719B1
公开(公告)日：2010-05-18
申请号：KR1020070128857
申请日：2007-12-12
Applicant: 한국전자통신연구원
IPC: H01S3/0941 , H01S3/10
CPC classification number: H01S5/026 , H01S5/0215 , H01S5/1014 , H01S5/1032 , H01S5/12 , H01S5/32333
Abstract: 단일모드 발진을 위한 하이브리드 레이저 다이오드 및 그 제조 방법이 제공된다. 이 하이브리드 레이저 다이오드는 실리콘층, 실리콘층 상에 배치되는 활성 패턴, 그리고 실리콘층 및 활성 패턴 사이에 배치되는 본딩막을 구비한다. 이때, 본딩막은 브래그 격자를 구성하는 회절 패턴들을 구비한다.
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公开(公告)号：KR100937599B1
公开(公告)日：2010-01-20
申请号：KR1020070132314
申请日：2007-12-17
Applicant: 한국전자통신연구원
IPC: H01L21/20
CPC classification number: H01L21/76267 , H01L21/76283
Abstract: 반도체 장치 및 그 형성 방법이 제공된다. 상기 방법은 기판 내에 국부적으로 매몰 절연막을 형성하는 단계를 포함한다. 상기 기판을 식각하여 상기 매몰 절연막을 노출하는 개구부를 형성하여, 상기 매몰 절연막 상에 적어도 일 방향으로 상기 기판으로부터 이격된 실리콘 패턴이 형성된다. 상기 실리콘 패턴을 둘러싸는 제 1 절연막이 형성된다.
국부 소이 구조, 매몰 절연막
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