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    불소 함유 산화주석 박막 제조장치
    31.
    发明授权
    불소 함유 산화주석 박막 제조장치 失效
    F掺杂的氧化锡膜的制造设备

    公开(公告)号：KR101110633B1

    公开(公告)日：2012-03-13

    申请号：KR1020090071847

    申请日：2009-08-05

    Applicant: (주)세온

    Inventor： 송철규

    IPC: C03C17/36

    Abstract: 본 발명에 따른 FTO 박막 제조장치는, 스프레이 코팅법, 초음파 분무 코팅법 또는 초음파 스프레이 분무법 중 하나의 방법으로 FTO 박막을 제조하는 장치에 있어서, FTO 프리커서(precursor) 액적이 기판과 평행하게 흐르며 상기 기판에 증착되도록, 일측에 상기 FTO 프리커서 액적이 분사되는 분사부가 구비되고 타측에 분사된 상기 FTO 프리커서 액적을 흡입하여 배기하는 배기부가 구비되어 있는 증착챔버를 포함한다.
    FTO 박막, FTO 프리커서, 분사부, 배기부

    불소가 도핑된 저저항 고투과율의 산화주석 박막 및 그 제조방법
    32.
    发明公开
    불소가 도핑된 저저항 고투과율의 산화주석 박막 및 그 제조방법 无效
    具有低电阻率和高发射率的多金属氧化铅薄膜及其方法

    公开(公告)号：KR1020110025385A

    公开(公告)日：2011-03-10

    申请号：KR1020090083422

    申请日：2009-09-04

    Applicant: (주)세온

    Inventor： 송철규

    IPC: C23C4/00 ,  H01L21/316

    Abstract: PURPOSE: A fluorine-doped tin oxide film of low resistivity and high transmittance and a manufacturing method thereof are provided to reduce a FTO thin film fabrication time by consecutively spreading a FTO thin film in a deposition chamber using a spray coating method. CONSTITUTION: A manufacturing method of fluorine-doped tin oxide film of low resistivity and high transmittance is as follows. A diffusion barrier layer is deposited on a substrate in a pretreatment chamber. The diffusion barrier layer deposited substrate is transferred to a deposition chamber. When the deposition chamber is 350~400°C, FTO precursor droplet is sprayed through a spay part to form a FTO thin film.

    Abstract translation: 目的：提供一种低电阻率和高透射率的氟掺杂氧化锡薄膜及其制造方法，以通过使用喷涂法在淀积室中连续扩散FTO薄膜来降低FTO薄膜制造时间。 构成：低电阻率和高透射率的氟掺杂氧化锡膜的制造方法如下。 扩散阻挡层沉积在预处理室中的衬底上。 将扩散阻挡层沉积的衬底转移到沉积室。 当沉积室为350〜400℃时，FTO前驱液滴通过喷涂部分喷涂形成FTO薄膜。

    폴리머 후처리 공정을 이용한 무색 투명 ＦＴＯ 전도막제조 방법
    35.
    发明公开
    폴리머 후처리 공정을 이용한 무색 투명 ＦＴＯ 전도막제조 방법 有权
    通过聚合反应制备无色和高透明度的多金属氧化铅膜

    公开(公告)号：KR1020090033526A

    公开(公告)日：2009-04-06

    申请号：KR1020070098568

    申请日：2007-10-01

    Applicant: 현대자동차주식회사 ,  한국세라믹기술원 ,  기아자동차주식회사

    Inventor： 김상학 ,  오선미 ,  김창열 ,  류도형 ,  송철규 ,  조광연 ,  허승헌

    IPC: C03C17/34

    CPC classification number: C03C17/42 ,  B29K2029/00 ,  B29K2029/04 ,  B29K2033/12 ,  B29K2995/0026 ,  B32B17/10036 ,  B32B17/10174 ,  B32B17/10761 ,  C03C17/3417 ,  C03C2217/77 ,  C03C2217/94

    Abstract: A non-colored FTO(f-dopped tin oxide) conductive film having high quality and high transmittance is provided to reduce optical coloration effect through a series of polymer post-treatment so as to produce a transmittance-increased FTO film. A non-colored FTO(f-dopped tin oxide) conductive film using a series of polymer post-treatment comprises the following steps of: heating a glass substrate up to a temperature range of 400-600°C to form a SiO2 barrier film; forming the FTO film on the SiO2 barrier film using a spray/ultrasonic spraying method; and coating the FTO film with polymer in post-treatment which is performed by dropping a polymer solution onto the FTO film and spin-coating or dip-coating the FTO film with the polymer solution.

    Abstract translation: 提供具有高质量和高透射率的无色FTO（f-掺杂的氧化锡）导电膜，以通过一系列聚合物后处理来降低光学着色效果，从而产生透射率增加的FTO膜。 使用一系列聚合物后处理的无色FTO（f-掺杂的氧化锡）导电膜包括以下步骤：将玻璃基板加热至400-600℃的温度范围以形成SiO 2阻挡膜; 使用喷雾/超声波喷涂方法在SiO 2阻挡膜上形成FTO膜; 并在后处理中用聚合物涂覆FTO膜，其通过将聚合物溶液滴加到FTO膜上并用聚合物溶液旋涂或浸涂FTO膜来进行。

    습기제거용 불소 함유 산화주석（ＦＴＯ） 투명전도막 유리및 이의 제조방법
    37.
    发明公开
    습기제거용 불소 함유 산화주석（ＦＴＯ） 투명전도막 유리및 이의 제조방법 有权
    透明导电F-DOPPED氧化锌玻璃，用于防止和制造

    公开(公告)号：KR1020090020136A

    公开(公告)日：2009-02-26

    申请号：KR1020070084613

    申请日：2007-08-22

    Applicant: 현대자동차주식회사 ,  한국세라믹기술원

    Inventor： 김상학 ,  김창열 ,  류도형 ,  송철규 ,  조광연 ,  허승헌

    IPC: C03C17/00 ,  C03C17/22 ,  C03C17/36

    CPC classification number: C03C17/36 ,  B32B17/10036 ,  B32B17/10174 ,  B32B17/10761 ,  C03C17/3673 ,  C03C2217/77 ,  C03C2217/94 ,  Y10T428/26 ,  Y10T428/31692 ,  Y10T428/31851

    Abstract: Transparent conductive F-doped tin oxide glass for defogging is provided to have excellent heat resistance, chemical resistance and abrasion resistance and to include FTO transparent oxide conductive having low resistance and high transmittance. Transparent conductive F-doped tin oxide glass for defogging is made by laminating a glass plate layer, a dielectric barrier layer, a functional layer, a metal electrode layer, a plastic interlayer and a glass plate layer in the order. A molar ratio of F/Sn in the functional layer is 0.5~2. A thickness of the FTO transparency conductive film layer is 0.1~1.3 mum. The dielectric barrier layer is made by SiO2 or mixing a transition metal selected from Ti, Zn and Al with SiO2. A thickness of the thickness is 5 ~ 200 nm.

    Abstract translation: 提供用于除雾的透明导电F掺杂氧化锡玻璃以具有优异的耐热性，耐化学性和耐磨性，并且包括具有低电阻和高透射率的FTO透明氧化物导电。 用于除雾的透明导电F掺杂氧化锡玻璃按照顺序层压玻璃板层，介电阻挡层，功能层，金属电极层，塑料中间层和玻璃板层来制造。 功能层中F / Sn的摩尔比为0.5〜2。 FTO透明导电膜层的厚度为0.1〜1.3μm。 介电阻挡层由SiO 2制成，或将选自Ti，Zn和Al的过渡金属与SiO 2混合。 厚度为5〜200nm。

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