公开(公告)号：SG166102A1

公开(公告)日：2010-11-29

申请号：SG2010070803

申请日：2008-03-31

Applicant: ADVANCED TECH MATERIALS

Inventor： JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W

Abstract: Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure. Figure 1A

公开(公告)号：CA2574816A1

公开(公告)日：2005-02-10

申请号：CA2574816

申请日：2004-07-28

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  BAUM THOMAS H ,  XU CHONGYING

IPC: C23C30/00 ,  C09D1/00 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/44 ,  C23C16/448 ,  C23C18/00 ,  C23C18/12 ,  H01L20060101 ,  H01L21/208 ,  H01L21/288 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

Abstract: Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.

公开(公告)号：AU2003288966A8

公开(公告)日：2004-06-07

申请号：AU2003288966

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H ,  GHENCIU ELIODOR G

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00 ,  B05D1/00 ,  H01L21/00

公开(公告)号：AU2003284932A1

公开(公告)日：2004-06-07

申请号：AU2003284932

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G

IPC: C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/3213 ,  C09K13/00 ,  C09K13/08 ,  H01L21/302 ,  C03C15/00 ,  C09K13/04 ,  C09K13/06

Abstract: A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

公开(公告)号：IN1462KON2014A

公开(公告)日：2015-10-23

申请号：IN1462KON2014

申请日：2014-07-11

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  KORZENSKI MICHAEL B ,  JIANG PING

IPC: B09B3/00 ,  B09B5/00

Abstract: Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.

公开(公告)号：SG2014005136A

公开(公告)日：2014-03-28

申请号：SG2014005136

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

公开(公告)号：SG175559A1

公开(公告)日：2011-11-28

申请号：SG2011069580

申请日：2007-09-25

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

Abstract: COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATIONCompositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant.

公开(公告)号：CA2589168A1

公开(公告)日：2005-06-16

申请号：CA2589168

申请日：2004-11-30

Applicant: ADVANCED TECH MATERIALS

Inventor： GHENCIU ELIODOR G ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  XU CHONGYING

IPC: C09K13/00 ,  C09K13/04 ,  H01L21/302 ,  H01L21/306

Abstract: A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a co-solvent, and optionally a surfactant. Such etching compositions overcome the intrinsic deficiency of SCFs as cleaning reagents, viz., the non-polar character of SCFs and their associated inability to solubilize polar species that must be removed from the semiconductor substrate. The resultant etched substrates experience lower incidents of stiction relative to substrates etched using conventional wet etching techniques.

公开(公告)号：AU2003288966A1

公开(公告)日：2004-06-07

申请号：AU2003288966

申请日：2003-10-29

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BAUM THOMAS H ,  KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  H01L21/306 ,  H01L21/311

公开(公告)号：AU2003284931A1

公开(公告)日：2004-06-07

申请号：AU2003284931

申请日：2003-10-27

Applicant: ADVANCED TECH MATERIALS

Inventor： KORZENSKI MICHAEL B ,  GHENCIU ELIODOR G ,  XU CHONGYING ,  BAUM THOMAS H

IPC: C11D7/02 ,  C11D7/10 ,  C11D7/32 ,  C11D7/50 ,  G03F7/42

Abstract: A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO 2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has been subjected to ion implantation, the cleaning composition additionally contains a fluorine ion source. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having photoresist or ion implanted photoresist thereon.