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    COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION
    3.
    发明专利
    COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION 未知

    公开(公告)号：SG175559A1

    公开(公告)日：2011-11-28

    申请号：SG2011069580

    申请日：2007-09-25

    Applicant: ADVANCED TECH MATERIALS

    Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

    Abstract: COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATIONCompositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant.

    FORMULATIONS FOR CLEANING MEMORY DEVICE STRUCTURES
    4.
    发明申请
    FORMULATIONS FOR CLEANING MEMORY DEVICE STRUCTURES 审中-公开
    清洁存储设备结构的配方

    公开(公告)号：WO2008058173A3

    公开(公告)日：2008-08-07

    申请号：PCT/US2007083891

    申请日：2007-11-07

    Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

    Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B

    IPC: C11D1/00 ,  C11D3/37

    CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D3/02 ,  C11D3/042 ,  C11D3/046 ,  C11D3/06 ,  C11D3/08 ,  C11D3/28 ,  C11D3/30 ,  C11D3/43 ,  C11D7/08 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/5004 ,  H01L21/02074 ,  H01L21/02101 ,  H01L21/31111 ,  H01L27/10844

    Abstract: A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic/inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and/or etch stop layer materials.

    Abstract translation: 一种去除组合物和从其上具有所述层的微电子器件去除含硅层的方法。 （P-TEOS），硼磷硅酸盐玻璃（BPSG），等离子体增强氧化物（PEOX），高密度等离子体氧化物（HDP），磷硅酸盐玻璃（磷硅酸盐玻璃）等（但不限于此） PSG），旋转电介质（SOD），热氧化物，上覆硅酸盐玻璃，牺牲氧化物，含硅有机聚合物，含硅杂化有机/无机材料，有机硅酸盐玻璃（OSG），TEOS，氟化硅酸盐玻璃 ），半球形晶粒（HSQ），碳掺杂氧化物（CDO）玻璃及其组合，相对于下电极，器件衬底和/或蚀刻停止层材料。

    FORMULATIONS FOR REMOVING COPPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES
    6.
    发明申请
    FORMULATIONS FOR REMOVING COPPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES 审中-公开
    用于从微电子设备中去除含铜复合后残留物的配方

    公开(公告)号：WO2007120259A3

    公开(公告)日：2008-01-17

    申请号：PCT/US2006060582

    申请日：2006-11-07

    Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

    Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

    IPC: B01D53/04

    CPC classification number: C11D11/0047 ,  C11D3/0073 ,  H01L21/02063

    Abstract: A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

    Abstract translation: 描述了用于从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。

    LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES
    8.
    发明专利
    LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES 未知

    公开(公告)号：SG177915A1

    公开(公告)日：2012-02-28

    申请号：SG2011095296

    申请日：2007-12-21

    Applicant: ADVANCED TECH MATERIALS

    Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

    Abstract: LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUESCleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal intercormect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.Figure 1

    REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS
    9.
    发明专利
    REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS 未知

    公开(公告)号：SG161280A1

    公开(公告)日：2010-05-27

    申请号：SG2010026391

    申请日：2006-04-10

    Applicant: ADVANCED TECH MATERIALS

    Inventor： KORZENSKI MICHAEL B ,  VISINTIN PAMELA M ,  BAUM THOMAS H

    Abstract: REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF-ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS A method and self-assembled monolayer (SAM)-containing compositions for removing bulk and hardened photoresist material from microelectronic devices have been developed. The SAM-containing composition includes at least one solvent, at least one catalyst, at least one SAM component, and optionally a surfactant. The SAM-containing compositions effectively remove the hardened photoresist material while simultaneously passivating the underlying silicon- containing layer(s) in a one step process.

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