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    COMPOSITION AND PROCESS FOR ASHLESS REMOVAL OF POST-ETCH PHOTORESIST AND/OR BOTTOM ANTI-REFLECTIVE MATERIAL ON A SUBSTRATE
    2.
    发明申请
    COMPOSITION AND PROCESS FOR ASHLESS REMOVAL OF POST-ETCH PHOTORESIST AND/OR BOTTOM ANTI-REFLECTIVE MATERIAL ON A SUBSTRATE 审中-公开
    后处理光刻胶和/或底层抗反射材料无衬底去除的组成和方法

    公开(公告)号：WO2006036368A3

    公开(公告)日：2006-11-16

    申请号：PCT/US2005029510

    申请日：2005-08-19

    Applicant: ADVANCED TECH MATERIALS ,  MINSEK DAVID W ,  BERNHARD DAVID ,  BAUM THOMAS H

    Inventor： MINSEK DAVID W ,  BERNHARD DAVID ,  BAUM THOMAS H

    IPC: C11D7/50

    CPC classification number: C11D7/3209 ,  C11D11/0047 ,  C23C22/63 ,  C23G1/20

    Abstract: An aqueous-based composition and process for removing photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having such material(s) thereon. The aqueous-based composition includes a quaternary ammonium base, at least one co-solvent, and optionally a chelator. The composition achieves high­efficiency removal of photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    Abstract translation: 一种用于从其上具有这种材料的基材去除光致抗蚀剂和/或底部抗反射涂层（BARC）材料的水基组合物和方法。 水基组合物包括季铵碱，至少一种共溶剂和任选的螯合剂。 该组合物在集成电路的制造中实现了光致抗蚀剂和/或BARC材料的高效去除，而对衬底（例如铜）上的金属物质没有不利影响，并且不损害在半导体结构中使用的基于SiOC的电介质材料。

    COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL
    3.
    发明申请
    COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL 审中-公开
    选择蚀刻间隔氧化物材料的组合物和方法

    公开(公告)号：WO2007044447A3

    公开(公告)日：2009-04-16

    申请号：PCT/US2006038931

    申请日：2006-10-04

    Applicant: ADVANCED TECH MATERIALS ,  RAJARATNAM MARTHA ,  BERNHARD DAVID D ,  MINSEK DAVID W

    Inventor： RAJARATNAM MARTHA ,  BERNHARD DAVID D ,  MINSEK DAVID W

    IPC: H01L21/3205 ,  H01L21/336 ,  H01L21/8238

    CPC classification number: H01L21/31111 ,  H01L21/28052 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    Abstract: A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.

    Abstract translation: 一种栅间隔氧化物材料去除组合物和用于从其上具有其的微电子器件至少部分去除栅极间隔物氧化物材料的工艺。 无水去除组合物包括至少一种有机溶剂，至少一种螯合剂，氟化氟化物：氟化氢成分和任选的至少一种钝化剂。 该组合物通过在栅电极结构中使用的金属硅化物互连材料物质的最小蚀刻，实现了在微电子器件的表面上从栅电极附近相对于多晶硅和氮化硅选择性去除栅间隔物氧化物材料。

    LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES
    6.
    发明专利
    LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES 未知

    公开(公告)号：SG177915A1

    公开(公告)日：2012-02-28

    申请号：SG2011095296

    申请日：2007-12-21

    Applicant: ADVANCED TECH MATERIALS

    Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

    Abstract: LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUESCleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal intercormect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.Figure 1

    PHOTORESIST REMOVAL
    7.
    发明专利
    PHOTORESIST REMOVAL 未知

    公开(公告)号：AU2003297347A1

    公开(公告)日：2004-07-22

    申请号：AU2003297347

    申请日：2003-12-17

    Applicant: ADVANCED TECH MATERIALS

    Inventor： MINSEK DAVID W ,  MURPHY MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H

    IPC: C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311

    Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

    COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI- REFLECTION COATINGS
    9.
    发明专利
    COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI- REFLECTION COATINGS 未知

    公开(公告)号：SG164385A1

    公开(公告)日：2010-09-29

    申请号：SG2010053486

    申请日：2006-01-09

    Applicant: ADVANCED TECH MATERIALS

    Inventor： MINSEK DAVID W ,  WANG WEIHUA ,  BERNHARD DAVID D ,  BAUM THOMAS H ,  RATH MELISSA K

    Abstract: An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high- efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture. FIG. NONE

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