中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

59 records (took 0.038 seconds)

    Determination of stack difference and correction using stack difference
    31.
    发明授权
    Determination of stack difference and correction using stack difference 有权

    公开(公告)号：US10481499B2

    公开(公告)日：2019-11-19

    申请号：US16413985

    申请日：2019-05-16

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G01N21/956 ,  G01N21/47

    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

    Metrology Method and Apparatus, Lithographic System, Device Manufacturing Method and Substrate
    32.
    发明申请
    Metrology Method and Apparatus, Lithographic System, Device Manufacturing Method and Substrate 有权
    计量方法和仪器，平版印刷系统，器件制造方法和基板

    公开(公告)号：US20150145151A1

    公开(公告)日：2015-05-28

    申请号：US14412771

    申请日：2013-06-17

    Applicant: ASML Netherlands B.V.

    Inventor： Maurits Van Der Schaar ,  Kaustuve Bhattacharyya ,  Hendrik-Jan Hidde Smilde

    IPC: G01B11/27 ,  G03F7/20 ,  H01L23/544 ,  G01B11/30

    CPC classification number: G01B11/27 ,  G01B11/30 ,  G03F7/20 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

    Abstract translation: 使用光刻工艺来形成分布在跨越衬底的多个位置处的多个目标结构（92,94），并且具有跨过目标结构分布的多个不同覆盖偏压值的重叠周期结构。 目标结构中的至少一些包括少于所述数量的不同叠加偏置值的多个重叠周期性结构（例如光栅）。 获得目标结构的不对称测量值。 检测到的不对称性用于确定光刻工艺的参数。 可以在校正底部光栅不对称的影响的同时使用包括平移，放大和旋转在内的叠加模型参数，并使用跨衬底的重叠误差的多参数模型。

    Mark position determination method
    34.
    发明授权
    Mark position determination method 有权

    公开(公告)号：US11022896B2

    公开(公告)日：2021-06-01

    申请号：US16083076

    申请日：2017-02-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Emil Peter Schmitt-Weaver ,  Amir Bin Ismail ,  Kaustuve Bhattacharyya ,  Paul Derwin

    IPC: G03F7/20 ,  G03F9/00

    Abstract: Corrections are calculated for use in controlling a lithographic apparatus. Using a metrology apparatus a performance parameter is measured at sampling locations across one or more substrates to which a lithographic process has previously been applied. A process model is fitted to the measured performance parameter, and an up-sampled estimate is provided for process-induced effects across the substrate. Corrections are calculated for use in controlling the lithographic apparatus, using an actuation model and based at least in part on the fitted process model. For locations where measurement data is available, this is added to the estimate to replace the process model values. Thus, calculation of actuation corrections is based on a modified estimate which is a combination of values estimated by the process model and partly on real measurement data.

    Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method
    35.
    发明授权
    Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method 有权

    公开(公告)号：US10831109B2

    公开(公告)日：2020-11-10

    申请号：US15839285

    申请日：2017-12-12

    Applicant: ASML Netherlands B.V.

    Inventor： Martin Jacobus Johan Jak ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

    Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

    RECIPE SELECTION BASED ON INTER-RECIPE CONSISTENCY
    37.
    发明申请
    RECIPE SELECTION BASED ON INTER-RECIPE CONSISTENCY 审中-公开

    公开(公告)号：US20190271921A1

    公开(公告)日：2019-09-05

    申请号：US16417706

    申请日：2019-05-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef ,  Timothy Dugan Davis ,  Peter David Engblom ,  Kaustuve Bhattacharyya

    IPC: G03F9/00 ,  G03F7/20 ,  G01B11/27

    Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

    Recipe selection based on inter-recipe consistency
    39.
    发明授权
    Recipe selection based on inter-recipe consistency 有权

    公开(公告)号：US10338484B2

    公开(公告)日：2019-07-02

    申请号：US15181126

    申请日：2016-06-13

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef ,  Timothy Dugan Davis ,  Peter David Engblom ,  Kaustuve Bhattacharyya

    IPC: G01B11/14 ,  G03F9/00 ,  G03F7/20 ,  G01B11/27

    Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

Patent Agency Ranking