公开(公告)号：EP3408273A1

公开(公告)日：2018-12-05

申请号：EP17700455.3

申请日：2017-01-17

Applicant: BASF SE

Inventor： ABELS, Falko ,  LOEFFLER, Daniel ,  WILMER, Hagen ,  WOLF, Robert ,  ROEDL, Christian ,  BÜSCHELBERGER, Philipp

IPC: C07F9/6568 ,  C07F15/06 ,  C23C16/18

CPC classification number: C07F9/65686 ,  C07F15/06 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4486 ,  C23C16/45525

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln....M... Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

公开(公告)号：EP3384065A1

公开(公告)日：2018-10-10

申请号：EP16804762.9

申请日：2016-11-29

Applicant: BASF SE

Inventor： ABELS, Falko ,  SCHWEINFURTH, David, Dominique ,  MATOS, Karl ,  LOEFFLER, Daniel ,  AHLF, Maraike ,  BLASBERG, Florian ,  SCHAUB, Thomas ,  SPIELMANN, Jan ,  KIRSTE, Axel ,  GASPAR, Boris

IPC: C23C16/455 ,  C23C16/06 ,  C07F9/547 ,  C07F5/02 ,  C07F7/02 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C07F9/5027 ,  C07F9/547 ,  C07F9/65848 ,  C23C16/06

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

公开(公告)号：EP3956729A1

公开(公告)日：2022-02-23

申请号：EP20715884.1

申请日：2020-04-03

Applicant: BASF SE

Inventor： CSIHONY, Szilard ,  LOEFFLER, Daniel ,  BRILL, Marcel ,  PIRRUNG, Frank ,  ENGELBRECHT, Lothar ,  BERGELER, Maike ,  WILKE, Patrick ,  BURK, Yeni ,  BOYKO, Volodymyr

IPC: G03F7/40 ,  B81C1/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/306 ,  C11D11/00

公开(公告)号：EP3953768A1

公开(公告)日：2022-02-16

申请号：EP20714214.2

申请日：2020-03-27

Applicant: BASF SE

Inventor： KAO, Chi Yueh ,  SHEN, Mei Chin ,  WEI, Sheng Hsuan ,  LOEFFLER, Daniel ,  KLIPP, Andreas ,  BRILL, Marcel ,  CSIHONY, Szilard ,  PIRRUNG, Frank ,  HEINE, Niklas Benjamin

IPC: G03F7/40 ,  C11D11/00

公开(公告)号：EP3802768A1

公开(公告)日：2021-04-14

申请号：EP19724427.0

申请日：2019-05-13

Applicant: BASF SE

Inventor： BRILL, Marcel ,  LOEFFLER, Daniel ,  BURK, Yeni ,  PIRRUNG, Frank ,  ENGELBRECHT, Lothar ,  CSIHONY, Szilard ,  BERGELER, Maike ,  BOYKO, Volodymyr ,  WILKE, Patrick

IPC: C11D7/50 ,  C11D11/00 ,  G03F7/40

公开(公告)号：EP3526363A1

公开(公告)日：2019-08-21

申请号：EP17777596.2

申请日：2017-10-05

Applicant: BASF SE

Inventor： SCHWEINFURTH, David Dominique ,  ABELS, Falko ,  MAYR, Lukas ,  LOEFFLER, Daniel ,  WALDMANN, Daniel

IPC: C23C14/58 ,  C23C16/455 ,  C23C16/56

公开(公告)号：EP3484901A1

公开(公告)日：2019-05-22

申请号：EP17739588.6

申请日：2017-07-14

Applicant: BASF SE

Inventor： LIMBURG, Carolin ,  LOEFFLER, Daniel ,  WILMER, Hagen ,  WALTER, Marc ,  REINERS, Matthias

IPC: C07F15/04 ,  C07F15/06

公开(公告)号：EP3380644A1

公开(公告)日：2018-10-03

申请号：EP16798703.1

申请日：2016-11-18

Applicant: BASF SE

Inventor： ADERMANN, Torben ,  LOEFFLER, Daniel ,  LIMBURG, Carolin ,  ABELS, Falko ,  WILMER, Hagen ,  GILL, Monica ,  GRIFFITHS, Matthew ,  BARRY, Séan

IPC: C23C16/18 ,  C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07F15/06 ,  C23C16/45553

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

公开(公告)号：EP3268509A1

公开(公告)日：2018-01-17

申请号：EP16707435.0

申请日：2016-03-02

Applicant: BASF SE

Inventor： SPIELMANN, Jan ,  ABELS, Falko ,  BLASBERG, Florian ,  FEDERSEL, Katharina ,  SCHILDKNECHT, Christian ,  LOEFFLER, Daniel ,  ADERMANN, Torben ,  FRANK, Juergen ,  SCHIERLE-ARNDT, Kerstin ,  WEIGUNY, Sabine

IPC: C23C16/455 ,  C07D207/08

CPC classification number: C07F7/0814 ,  C07D207/08 ,  C09D1/00 ,  C23C16/18 ,  C23C16/409 ,  C23C16/45553

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com- pound of general formula (I) into the gaseous or aerosol state Ln---M--Xm L= formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.