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公开(公告)号：AU2017325825A1
公开(公告)日：2019-02-21
申请号：AU2017325825
申请日：2017-08-29
Applicant: BUTTERFLY NETWORK INC
Inventor： CHEN KAILIANG , FIFE KEITH G
Abstract: A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.
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公开(公告)号：CA3052673A1
公开(公告)日：2018-09-13
申请号：CA3052673
申请日：2018-03-07
Applicant: BUTTERFLY NETWORK INC
Inventor： ROTHBERG JONATHAN M , ALIE SUSAN A , FIFE KEITH G , SANCHEZ NEVADA J , RALSTON TYLER S , ZAHORIAN JAIME SCOTT
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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33.发明专利
公开(公告)号：CA3052485A1
公开(公告)日：2018-08-30
申请号：CA3052485
申请日：2018-02-26
Applicant: BUTTERFLY NETWORK INC
Inventor： ROTHBERG JONATHAN M , FIFE KEITH G , ALIE SUSAN A , LUTSKY JOSEPH , GROSJEAN DAVID
Abstract: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.
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34.发明专利
公开(公告)号：AU2018203942A1
公开(公告)日：2018-06-21
申请号：AU2018203942
申请日：2018-06-04
Applicant: BUTTERFLY NETWORK INC
Inventor： RALSTON TYLER S , CHARVAT GREGORY L , SANCHEZ NEVADA J , ROTHBERG JONATHAN M , FIFE KEITH G
Abstract: An apparatus, comprising: a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode; a conductive membrane bonded to the semiconductor wafer to form a bonded structure such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and the uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane. 136 144 1310 128 '' 1'' -'' D18 138 142 . .. . .. . .. S. .'.6.4. . W ... l' . . . . . . . . . . . . . . \ . . . . . . . . . . . . . . 2602 118 2602 104.102 2602 18 242 FIG. 2610 12
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公开(公告)号：CA3026157A1
公开(公告)日：2017-12-28
申请号：CA3026157
申请日：2017-06-19
Applicant: BUTTERFLY NETWORK INC
Inventor： ROTHBERG JONATHAN M , ALIE SUSAN A , ZAHORIAN JAIME SCOTT , CRISTMAN PAUL FRANCIS , FIFE KEITH G
Abstract: An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.
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Patent Agency Ranking
公开(公告)号：CA3018967A1
公开(公告)日：2017-10-05
申请号：CA3018967
申请日：2017-03-31
Applicant: BUTTERFLY NETWORK INC
Inventor： CHEN KAILIANG , RALSTON TYLER S , FIFE KEITH G
Abstract: Circuitry for ultrasound devices is described. A multilevel pulser is described, which can provide bipolar pulses of multiple levels. The multilevel pulser includes a pulsing circuit and pulser and feedback circuit. Symmetric switches are also described. The symmetric switches can be positioned as inputs to ultrasound receiving circuitry to block signals from the receiving circuitry.
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公开(公告)号：CA3006064A1
公开(公告)日：2017-06-08
申请号：CA3006064
申请日：2016-12-01
Applicant: BUTTERFLY NETWORK INC
Inventor： CHEN KAILIANG , FIFE KEITH G , SANCHEZ NEVADA J , CASPER ANDREW J , RALSTON TYLER S
Abstract: A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.
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公开(公告)号：AU2014235032A1
公开(公告)日：2015-10-01
申请号：AU2014235032
申请日：2014-03-13
Applicant: BUTTERFLY NETWORK INC
Inventor： ROTHBERG JONATHAN M , FIFE KEITH G , RALSTON TYLER S , CHARVAT GREGORY L , SANCHEZ NEVADA J
Abstract: To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the "ultrasound- on- a-chip" solution disclosed herein.
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公开(公告)号：CA2903479A1
公开(公告)日：2014-09-25
申请号：CA2903479
申请日：2014-03-13
Applicant: BUTTERFLY NETWORK INC
Inventor： ROTHBERG JONATHAN M , FIFE KEITH G , RALSTON TYLER S , CHARVAT GREGORY L , SANCHEZ NEVADA J
Abstract: To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the "ultrasound- on- a-chip" solution disclosed herein.
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40.发明专利
公开(公告)号：CA2905040C
公开(公告)日：2021-10-19
申请号：CA2905040
申请日：2014-03-13
Applicant: BUTTERFLY NETWORK INC
Inventor： ROTHBERG JONATHAN M , FIFE KEITH G , RALSTON TYLER S , CHARVAT GREGORY L , SANCHEZ NEVADA J
Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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