公开(公告)号：KR20200130375A

公开(公告)日：2020-11-18

申请号：KR20207028604

申请日：2019-03-08

Applicant: BUTTERFLY NETWORK INC

Inventor： FIFE KEITH G ,  LIU JIANWEI

IPC: B06B1/02 ,  H05K1/11 ,  H05K3/46

Abstract: 본명세서에설명된기술의양태들은 CMUT(capacitive micromachined ultrasonic transducer)들을포함하는초음파트랜스듀서디바이스들및 초음파트랜스듀서디바이스들에서 CMUT들을형성하기위한방법들에관한것이다. 일부실시예들은제1 기판상에절연재료의제1 층을형성하고, 절연재료의제1 층상에절연재료의제2 층을형성하고, 그후 제2 절연재료에캐비티를에칭함으로써, CMUT의캐비티를형성하는것을포함한다. 캐비티를밀봉하기위해제2 기판이제1 기판에본딩될수 있다. 절연재료의제1 층은, 예를들어, 알루미늄산화물을포함할수 있다. 제1 기판은집적회로를포함할수 있다. 일부실시예들은제1 및제2 절연층들을형성하기전에(TSV-중간프로세스) 또는제1 및제2 기판들을본딩하는것에후속하여(TSV-최종프로세스) 관통실리콘비아(TSV)들을제1 기판에형성하는것을포함한다.

公开(公告)号：WO2014151525A3

公开(公告)日：2015-04-09

申请号：PCT/US2014025924

申请日：2014-03-13

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  RALSTON TYLER S ,  CHARVAT GREGORY L ,  SANCHEZ NEVADA J

IPC: B06B1/02 ,  B81C1/00 ,  G01N29/24

CPC classification number: B81C1/00301 ,  B06B1/02 ,  B06B1/0292 ,  B81B7/007 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2201/0195 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01N29/2406 ,  H01L29/84 ,  H04R19/005

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

Abstract translation: 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。

公开(公告)号：WO2014151362A3

公开(公告)日：2014-11-13

申请号：PCT/US2014025567

申请日：2014-03-13

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  RALSTON TYLER S ,  CHARVAT GREGORY L ,  SANCHEZ NEVADA J

IPC: G01S7/52 ,  B06B1/02 ,  B81C1/00 ,  G01S15/89

CPC classification number: A61B8/4494 ,  A61B8/14 ,  A61B8/145 ,  A61B8/4483 ,  A61B8/4488 ,  A61B8/485 ,  A61B8/54 ,  A61N7/00 ,  A61N7/02 ,  B06B1/02 ,  B81C1/00246 ,  G01S7/52019 ,  G01S7/52034 ,  G01S7/52047 ,  G01S7/5208 ,  G01S15/02 ,  G01S15/8915 ,  G01S15/8977 ,  H04R1/00 ,  Y10T29/41

Abstract: To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the "ultrasound- on- a-chip" solution disclosed herein.

Abstract translation: 为了实现单芯片超声成像解决方案，可以在接收信号路径中采用片上信号处理来减少数据带宽，并且可以使用高速串行数据模块来将所有接收到的通道的数据移出片外作为数字 数据流。 片上接收信号的数字化允许片上执行先进的数字信号处理，从而允许将整个超声成像系统完全集成在单个半导体衬底上。 同样公开了各种新颖的波形生成技术，换能器配置和偏置方法等。 HIFU方法可以附加地或可选地用作本文公开的“片上超声波”解决方案的组件。

公开(公告)号：AU2017281280B2

公开(公告)日：2022-01-06

申请号：AU2017281280

申请日：2017-06-19

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  ALIE SUSAN A ,  ZAHORIAN JAIME SCOTT ,  CRISTMAN PAUL FRANCIS ,  FIFE KEITH G

IPC: B06B1/02 ,  A61B8/12 ,  A61B8/14 ,  B06B1/06 ,  G01S15/89 ,  H01R4/02 ,  H01R12/51

Abstract: An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.

公开(公告)号：AU2019288152A1

公开(公告)日：2021-01-07

申请号：AU2019288152

申请日：2019-06-18

Applicant: BUTTERFLY NETWORK INC

Inventor： CHEN CHAO ,  CHEN KAILIANG ,  CHIU LEUNG KIN ,  KOOK YOUN-JAE ,  FIFE KEITH G

IPC: A61B8/00 ,  A61B8/14 ,  B06B1/02

Abstract: Aspects of technology described herein relate to ultrasound apparatuses including capacitive micromachines ultrasonic transducers (CMUTs) that are directly electrically coupled to delta-sigma analog-to-digital converters (ADCs). The apparatus may lack an amplifier or multiplexer between each CMUT and delta-sigma ADC. The apparatus may include between 100 and 20,000 CMUTs and between 100 and 20,000 delta-sigma ADCs, each of the CMUTs directly electrically coupled to one of the delta-sigma ADCs. The CMUTs and the delta-sigma ADCs may be monolithically integrated on a single substrate. The delta-sigma ADCs may lack an integrator distinct from the CMUT. An internal capacitance of the CMUT may serve as an integrator for the delta-sigma ADC.

公开(公告)号：AU2015247484B2

公开(公告)日：2020-05-14

申请号：AU2015247484

申请日：2015-04-17

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  SANCHEZ NEVADA J ,  ALIE SUSAN A

IPC: H01L27/06 ,  A61B5/02 ,  A61B8/00 ,  B06B1/02 ,  B81C1/00 ,  H01L21/768 ,  H01L27/092

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：CA3111475A1

公开(公告)日：2020-04-02

申请号：CA3111475

申请日：2019-09-27

Applicant: BUTTERFLY NETWORK INC

Inventor： LIU JIANWEI ,  FIFE KEITH G ,  LUTSKY JOSEPH ,  MIAO LINGYUN

IPC: B81B3/00 ,  B81C1/00

Abstract: A method of forming an ultrasound transducer device includes bonding a membrane to a substrate so as to form a sealed cavity between the membrane and the substrate. An exposed surface located within the sealed cavity includes a getter material that is electrically isolated from a bottom electrode of the cavity.

公开(公告)号：AU2018330436A1

公开(公告)日：2020-02-06

申请号：AU2018330436

申请日：2018-09-06

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FERGUS GREGG ,  FIFE KEITH G ,  RALSTON TYLER S ,  SANCHEZ NEVADA J ,  ZAHORIAN JAIME SCOTT ,  CHEN KAILIANG ,  MCNULTY CHRISTOPHER THOMAS

IPC: A61B8/06 ,  A61B5/02 ,  A61B8/08

Abstract: Aspects of the technology described herein relate to an apparatus including an ultrasound-on-a-chip device configured to be bound to a user's wrist. The ultrasound-on-a-chip device may include a two-dimensional array of ultrasonic transducers. The transducers may be capacitive micromachined ultrasonic transducers (CMUTs) and may be configured to emit ultrasound waves having a frequency between approximately 5-20 MHz. A coupling strip may be coupled to the ultrasound-on-a-chip device to reduce the air gap between the ultrasound-on-a-chip device and the user's wrist. The ultrasound-on-a-chip device may be waterproof and may be able to perform both transverse and longitudinal ultrasound scanning without being rotated. The ultrasound-on-a-chip device may be configured to calculate pulse wave velocity through a blood vessel in a user's wrist.

公开(公告)号：CA3032962A1

公开(公告)日：2018-03-22

申请号：CA3032962

申请日：2017-08-29

Applicant: BUTTERFLY NETWORK INC

Inventor： CHEN KAILIANG ,  FIFE KEITH G

IPC: A61B8/00 ,  A61B8/14 ,  G01N29/36 ,  G01S7/52 ,  G01S15/89 ,  G06K9/00 ,  G10K11/34

Abstract: A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.

公开(公告)号：CA2946133A1

公开(公告)日：2015-10-22

申请号：CA2946133

申请日：2015-04-17

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  SANCHEZ NEVADA J ,  ALIE SUSAN A

IPC: B81C1/00 ,  A61B5/02 ,  A61B8/00 ,  B06B1/02 ,  H01L21/768 ,  H01L27/06 ,  H01L27/092

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.