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公开(公告)号：JPH04367218A
公开(公告)日：1992-12-18
申请号：JP14329291
申请日：1991-06-14
Applicant: CANON KK
Inventor： AEBA TOSHIAKI , MORISHITA MASAKAZU
IPC: H01L21/20 , H01L21/265 , H01L29/04
Abstract: PURPOSE:To provide a polycrystallatine low-resistance film having a large particle size and oriented grain boundaries. CONSTITUTION:An SiO2 film 2 as an insulator in a thickness of 4000Angstrom is first deposited on an Si substrate 1. The SiO2 film 2 is then resist-patterned; it is etched by a chemical etchant, e.g. buffered hydrofluoric acid or the like; a stepped part 3 at a difference in height of 2000Angstrom is formed. A polycrystalline Si film 4 in a film thickness of 2000Angstrom is formed, by a low-pressure chemical vapor deposition method (LPCVD), on the SiO2 film 2 having the stepped part 3. In addition, As ions are implanted into the whole surface of the polycrystalline Si film 4 under conditions of 5E 15 pieces/cm and 150keV. Thereby, parts 5 other than a part near the edge part of the stepped part 3 are made amorphous, and a polycrystalline region 6 is left near the edge part. Lastly, this specimen is annealed at 650 deg.C for one hour. Thereby, a low- resistance Si film is formed.
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公开(公告)号：JPS62186265A
公开(公告)日：1987-08-14
申请号：JP2687186
申请日：1986-02-12
Applicant: CANON KK
Inventor： AEBA TOSHIAKI , SATO YASUBUMI
IPC: H01L21/30 , G03F7/30 , H01L21/027 , H05K3/06
Abstract: PURPOSE:To obtain a work having stable characteristics by measuring the alkali concn. in a developing soln. which develops a pattern forming agent coated on the surface of the work after exposing by a measuring means and controlling the developing soln. thereby executing good development and automatically exchanging the developing soln. CONSTITUTION:The work 3 is immersed in the developing soln. 2. A sensor 5 which is a detecting part of measuring means such as pH meter, ion electrode or titrator is dipped into the developing soln. 2 and whether the developing soln. 2 is usable or not is judged by the detected alkali concn., by which the soln. control is executed. A display part 7 which displays the alkali concn., a recording part 9 which records the alkali concn., an alarm part 9 which alarms the decrease of the alkali concn. when the alkali concn. decreases to the value below the prescribed value (permissible value) and selector valves 10, 11 are connected to the control part 6. The selector valve 10 is interposed in a discharge pipe 12 to discharge the developing soln. in a developing tank 1 and the selector valve 11 is interposed in a supply pipe 14 to supply the fresh developing soln. from a storage tank 13 into the developing tank 1.
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公开(公告)号：JPS62173473A
公开(公告)日：1987-07-30
申请号：JP1473586
申请日：1986-01-28
Applicant: CANON KK
Inventor： SATO YASUBUMI , AEBA TOSHIAKI
IPC: H01L21/30 , G03F7/30 , H01L21/027 , H05K3/00
Abstract: PURPOSE:To permit always stable development by providing a regenerating means for regenerating a used developing soln. CONSTITUTION:The developing soln. 2 in a developing tank 1 is discharged from a discharge pipe 6 by a pump 5 and is introduced into the regenerating means 7. A supply pipe 8 connecting to a shower 4 is connected to the regenerating means and the regenerated developing soln. 2 is ejected from the shower 4 toward a work 3, by which the work is developed. The resist concn. in the developing soln. 2 usually increases gradually on repetitive use but the developing soln. 2 is circulated by the regenerating means 7 and since the resist components are removed therefrom by the regenerating means, the increase of the concn. of the resist component is limited and the developing soln. 2 having specified alkalinity is supplied from the shower 4.
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公开(公告)号：JP2002075261A
公开(公告)日：2002-03-15
申请号：JP2000268724
申请日：2000-09-05
Applicant: CANON KK
Inventor： AEBA TOSHIAKI
IPC: G01N23/227 , G21K1/00 , H01J37/20 , H01J37/285
Abstract: PROBLEM TO BE SOLVED: To provide an emission microscope which allows an observation of a sample in a good condition. SOLUTION: A sample 10 under observation is kept at a relevant temperature by a sample temperature control means consisting of a sample temperature detecting device 24 for detecting temperature of the sample 10, a sample cooling device 22 for cooling the sample 10, and a control means 25 for controlling temperature of the sample 10 by exerting cooling action on the sample 10 operating the sample cooling device 22 based on the temperature of the sample detected by the sample temperature detecting device 24. Further, the degree of vacuum inside a sample chamber 7 can be heightened by preparing a cold trap 26 in it, which also restrains generation of discharge of the sample under observation.
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公开(公告)号：JP2002025497A
公开(公告)日：2002-01-25
申请号：JP2000207134
申请日：2000-07-07
Applicant: CANON KK
Inventor： KOBAYASHI TOYOKO , KOBAYASHI TATSU , KUSAKA TAKAO , TAKADA KAZUHIRO , AEBA TOSHIAKI
IPC: G01N23/04 , G01N23/225 , G01N23/227 , G01N27/62 , H01J37/16 , H01J37/20 , H01J37/26 , H01J49/24
Abstract: PROBLEM TO BE SOLVED: To suppress nonconformities caused mainly by deposits on the surface of an article in a vacuum analytical system with high efficiency, satisfactory operability, without being subjected to restriction by an article in an apparatus which analyzes charged particles or the energy generated by applying energy to a sample, in a sample chamber which is a part of the analytical system. SOLUTION: A photocatalyst layer is formed on the surfaces of one or more articles in the analytical system, and rays for photodecomposing deposits on the photocatalyst layers are irradiated.
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Patent Agency Ranking
公开(公告)号：JP2001015056A
公开(公告)日：2001-01-19
申请号：JP2000109383
申请日：2000-04-11
Applicant: CANON KK
Inventor： AEBA TOSHIAKI
Abstract: PROBLEM TO BE SOLVED: To provide an electron microscope holder having high X-ray detection efficiency even in an EDX analysis by an X-ray analyzer of a low angle for extracting a sample for TEM observation in cross section produced by the FIB processing and to provide a spacer for use therefor. SOLUTION: This sample holder has a sample holding base 2 having a sample holding surface 11 for arranging a sample 21 and a pair of projecting parts disposed sandwiching the sample holding base 2 and projected over the sample holding surface 11. Here, the sample holding surface 11 of the sample holding base 2 has an angle respective to the plane containing each of the upper parts of the pair of projecting parts projected over the sample holding surface 11.
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公开(公告)号：JP2000097823A
公开(公告)日：2000-04-07
申请号：JP26976698
申请日：1998-09-24
Applicant: CANON KK
Inventor： AEBA TOSHIAKI
Abstract: PROBLEM TO BE SOLVED: To provide a marking method capable of forming a mark without etching (or fracture) of a sample, and capable of forming a mark removable after use, and capable of forming a mark visible easily from both sides of the sample. SOLUTION: In this marking method, a deposit 10 formed on a sample 3 is used as a mark by irradiating an ion beam 2 focused in the gas atmosphere on the sample 3. In this mark removing method, the mark is removed by etching by irradiating the focused ion beam 2 on the mark formed by the marking method. In this processing method, after the mark is formed by the marking method, minute processing is executed on both sides of the sample 3.
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公开(公告)号：JP2000091314A
公开(公告)日：2000-03-31
申请号：JP25278898
申请日：1998-09-07
Applicant: CANON KK
Inventor： AEBA TOSHIAKI
IPC: H01J37/305 , B23K15/00 , H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To terminate the machining work carried out on a work at appropri ate timing by detecting the machined state of a sample. SOLUTION: A wiring 4 of a sample 3 id disconnected at a section 5 to be machined of the wiring 4, with the section 5 etched in the depth direction by scanning the section 5 with an ion beam focused by means of an ion optics device 1. An electrical resistance measuring instrument 21 measures the electrical resistance value of the wiring 4 and detects the fluctuations in the resistance value caused by the disconnection of the wiring 4. When the measured electrical resistance value reaches a reference value after alternately repeating the ion beam machining step and electrical resistance measuring step, a controller 20 discriminates that the wiring 4 of the sample 3 has been disconnected and terminates the focused ion beam machining, by continuously causing the ion beam 2 to be deflected to a Faraday cup 8 side by controlling the ion optical device 1.
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公开(公告)号：JPH09115431A
公开(公告)日：1997-05-02
申请号：JP29064395
申请日：1995-10-13
Applicant: CANON KK
Inventor： AEBA TOSHIAKI
Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element having a conductive thin film of an even film thickness by using a specified substrate in the method of forming an electron emitting part between opposite electrodes on a substrate by the use of a specified process, thereby enabling the formation of an element on a large area substrate at a low cost. SOLUTION: In a method of forming an electron emitting part 5 through the steps of applying liquid of material (e.g. dimethyl sulhoxide solution of palladium acetate) for forming a conductive thin film 4 containing a metal compound to between opposite electrodes 2, 3 on a substrate 1, and of heating and baking the same, a substrate 1 having thereon uneveness, preferably that of about 1 to 100nm is used. Preferably the eneveness on the substrate 1 is formed by the application of ions or chemical etching. Also, preferably means of applying a drip of solution is an ink jet method.
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公开(公告)号：JPH08104520A
公开(公告)日：1996-04-23
申请号：JP25963094
申请日：1994-09-30
Applicant: CANON KK
Inventor： DEN TORU , KOBAYASHI TAMAKI , AEBA TOSHIAKI , KANEKO NORIO
Abstract: PURPOSE: To produce a superconducting junction device suitable for a tunnel barrier layer, usable as a Josephson element, becoming a superconducting element having excellent superconducting characteristic and usable with a simple cooler by using specified multiple oxides containing copper as a superconducting device. CONSTITUTION: For example, the oxide of the formula: Ce1 ±a Ln2 ±b AM2 ±c Cu2+d Ti2-d O13 ±e (In the formula, 0 =1 kind element or atom group selected from among La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Y; Ba1-x Srx (0
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