公开(公告)号：JPH05100093A

公开(公告)日：1993-04-23

申请号：JP28917191

申请日：1991-10-08

Applicant: CANON KK

Inventor： HARUMI KAZUYUKI ,  EBINUMA RYUICHI ,  HASEGAWA TAKAYUKI

IPC: G21K1/06 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027 ,  H05H13/04

Abstract: PURPOSE:To highly precisely position a mirror by detecting and adjusting the attitude of the mirror against SR-X-rays. CONSTITUTION:A mirror 101 is supported in a vacuum chamber 105 by a mirror support device constituted of a mirror supporter 106, a tilt plate 201, and a reference frame 301, and a detector unit 801 detecting the attitude (omegaz, omegay) of the mirror 101 against the optical path of SR-X-rays is supported by the reference frame 301. The detector unit 801 is mounted with an X-ray detector on a detector table 802 and reciprocated in the X-axis direction along the reference frame 301. A omegaz drive motor 304 rotating the reference frame 301 and a omegay drive motor 602 rotating an upper rack 501 are driven while the attitude of the mirror 101 is detected by the X-ray detector.

公开(公告)号：JP2000260690A

公开(公告)日：2000-09-22

申请号：JP6072899

申请日：1999-03-08

Applicant: CANON KK

Inventor： OTA HIROHISA ,  HASEGAWA TAKAYUKI ,  MIYAJI GOJI

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To ensure highly accurate alignment and exposure even when the mask magnification is corrected through deformation with a mechanical means by correcting the measurements of a measuring means and the driving amount of a stage based on the positional shift of a mask pattern caused by the magnification correcting mechanism of a mask. SOLUTION: After a wafer is chucked in a wafer chuck and subjected to prealignment, first time measurement of the positional shift in a global plane (AA) and of the gap (AF) are carried out. Magnification of a pattern on the wafer is then calculated based on the measurements. If magnification correction of a mask is required based on the exposure magnification results, the magnification is altered by a magnification correcting mechanism. In order to correct that amount, global AA and AF measurements are carried out again and the drive pattern of the stage is determined based on the measurements before advancing to the wafer exposure process. At the wafer exposure process, movement in the in-plane rotational direction and the moving amount (Δωx) in the inclining direction of the plane are corrected.

公开(公告)号：JPH11312640A

公开(公告)日：1999-11-09

申请号：JP1510299

申请日：1999-01-25

Applicant: CANON KK

Inventor： HARA SHINICHI ,  TANAKA YUTAKA ,  TERAJIMA SHIGERU ,  MATSUI SHIN ,  HASEGAWA TAKAYUKI

IPC: H01L21/027 ,  G03F7/20 ,  G05D16/00 ,  G05D16/20

Abstract: PROBLEM TO BE SOLVED: To provide a processor, which generates intended air current in the atmospheric gas in a pressure reduced chamber, reduces local temperature variation and is able to maintain a stabilized atmospheric state. SOLUTION: A vacuum line 11, which controls the atmospheric pressure by evacuating the atmospheric gas in a pressure reduced chamber 1, containing a light exposing section by a vacuum pump 20, a circulating supply line 12, which returns the gas evacuated by the vacuum pump 20, and a branching supply line 12A which branches the gas from the circulating supply line 20 and returns the gas, are provided. By blowing out the gas to be returned into the chamber through blowing holes 15 and 17, the down-flow air current along the surrounding part of the processing part and the local blowing are generated. Heat and the like generated by the heating source in the chamber 1 are adequately discharged. The fluctuations in the gas generated by the local temperature difference is avoided and the stabilized atmospheric state is maintained.

公开(公告)号：JPH10239500A

公开(公告)日：1998-09-11

申请号：JP5842297

申请日：1997-02-26

Applicant: CANON KK

Inventor： HASEGAWA TAKAYUKI ,  SAKAMOTO EIJI

IPC: G21K5/00 ,  G03F7/20 ,  H01L21/027 ,  H05H13/04

Abstract: PROBLEM TO BE SOLVED: To provide an X-ray output window having a sufficient mechanical strength and thin. SOLUTION: The thickness of the beryllium foil 11 of an X-ray output window E1 for taking out an X-ray from a beam duct 2 to an exposing chamber 1 is designed on the basis of the tensile stress generated in the center of the beryllium foil 11 when deflected by the pressure difference between the beam duct 2 and the exposing chamber 1. In order to prevent a larger tensile stress from being generated in the contact part of a flange 12 with the beryllium foil 11, a curved part 12a having a large curvature radius is provided on the inner periphery of the flange 12.

公开(公告)号：JPH07281446A

公开(公告)日：1995-10-27

申请号：JP9567694

申请日：1994-04-08

Applicant: CANON KK

Inventor： HASEGAWA TAKAYUKI ,  FUJIOKA HIDEHIKO

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027 ,  H05G1/04 ,  G03B27/32

Abstract: PURPOSE:To control the pressure reduction atmosphere of an evacuated chamber to be high purity CONSTITUTION:The evacuated chamber 1 is controlled to be the pressure reduction atmosphere of a prescribed purity by evacuating gas in the chamber 1 by a second exhaust line 6 while helium gas is supplied from a helium gas supply line 7 after it is evacuated. The gas discharged by the line 6 is recovered by the line 7 and introduced to the chamber 1 again. The purity of the helium gas supplied by the line 7 is adjusted by purifying one part of the helium gas by the purifier 10a of a helium gas purify and branch line 10 based on the output of a purity sensor 11 detecting the purity of the discharged gas.

公开(公告)号：JPH0786156A

公开(公告)日：1995-03-31

申请号：JP10100694

申请日：1994-05-16

Applicant: CANON KK

Inventor： FUJIOKA HIDEHIKO ,  HASEGAWA TAKAYUKI ,  TANAKA YUTAKA

IPC: C23C14/56 ,  B65G49/07 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/205 ,  H01L21/67

Abstract: PURPOSE:To provide a treating system equipped with a plurality of chambers which allows highly accurate exposure processing and the like. CONSTITUTION:The processing system comprises a process chamber 1 and a load lock chamber 2 incorporating a processing unit respectively and the pressure thereof can be reduced, and a member 6 for coupling respective processing units, wherein the coupling member 6c and the chambers 1, 2 are sealed airtightly through an elastic airtightness sustaining means, i.e., a bellows 10c.

公开(公告)号：JPH04151088A

公开(公告)日：1992-05-25

申请号：JP27241390

申请日：1990-10-12

Applicant: CANON KK

Inventor： HASEGAWA TAKAYUKI

IPC: G21K5/00 ,  F16L11/11 ,  F16L27/10 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027

Abstract: PURPOSE:To prevent breakage of a vacuum pipe by bending a plateform body in a parallelogram to form a unit member, to intercouple the unit members in an airtight manner in a state to bend the unit member in a reverse direction to the bending direction of a diagonal line to form an annular body, and intercoupling the annular bodies in an airtight manner to form a cylindrical body. CONSTITUTION:Eight plateform bodies 31,..., 38 in the shape parallelogram having two diagonal lines different in the length are joined together in a manner that corresponding sides are joined together. The plateform bodies are bent in the same direction and bent in a reverse direction to the folding line of a diagonal line to form an annular body 30. The three annular bodies 30 are intercoupled in an axial direction to form a signal cylindrical body. This method forms a twist bellows being an axially expandable flexible pipe.

公开(公告)号：JP2001102281A

公开(公告)日：2001-04-13

申请号：JP27355899

申请日：1999-09-28

Applicant: CANON KK

Inventor： HARA SHINICHI ,  HASEGAWA TAKAYUKI ,  TANAKA YUTAKA ,  TERAJIMA SHIGERU ,  TOKITA TOSHINOBU

IPC: H01L21/302 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To reuse gas discharged from a load lock room. SOLUTION: An A room 1 has an aligner for exposing a wafer W1 inside and is filled with a pressure-reduced atmosphere of expensive helium and when a gate valve 1a is opened in order to carry the wafer W1 in the A room 1, helium is introduced into a load lock room 3 from a helium source 7a after the load lock room 3 is evacuated through a 1st discharge line 4. To carry the wafer W1 out of the A room 1, the wafer W1 is put back in the load lock room 3, which is evacuated through a 2nd discharge line 5, and after the helium is collected to the helium source 7a, air is introduced into the load lock room 3 from an air source 6a and then a gate valve 2a is opened.

公开(公告)号：JPH10289870A

公开(公告)日：1998-10-27

申请号：JP11187097

申请日：1997-04-14

Applicant: CANON KK

Inventor： TANAKA YUTAKA ,  HASEGAWA TAKAYUKI

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To improve the precision of gap control and the precision of registration and transfer between a mask and a substrate, such as a wafer, by measuring in high precision the levels of the mask and the substrate in a device. SOLUTION: There is provided a semiconductor exposure device wherein light is exposed to while a mask membrane 2 of a mask 1 and a wafer 6 is brought close to each other at a very small distance. The device comprises a first processing unit 14 for calculating an approximate surface level of the mask membrane 2 from the results of the measurements obtained by means of an alignment scope 13 for measuring the level of the mask membrane 2, and a second processing unit 15 for calculating an approximate surface level of an exposure surface of the wafer 6 from the results of measurements obtained by a noncontact displacement meter 12 for measuring the level of the wafer 6. In accordance with the results of the operations of the processing units 14 and 15, a control unit 16 drives at least one of the stages of the mask 1 and the wafer 6 to control the distance between the mask 1 and the wafer 6 in high precision, while preventing the mask membrane 2 from being deformed, thus improving the transfer precision.

公开(公告)号：JPH09283419A

公开(公告)日：1997-10-31

申请号：JP11187296

申请日：1996-04-09

Applicant: CANON KK

Inventor： FUKUOKA HIROYUKI ,  HASEGAWA TAKAYUKI

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To perform replacement and maintenance of a gas refiner of an exhaust feedback device without interrupting exposure. SOLUTION: A high purity helium gas is supplied from a helium gas supply line 7 into a reduced pressure chamber 1 which houses a wafer W1 and the like therein while the reduced pressure chamber 1 is continuously exhausted by a second exhaust line 6. Thus, the inside of the reduced pressure chamber 1 is maintained to a predetermined reduced pressure atmosphere. The exhaust gas of the reduced pressure chamber 1 is refined by a gas refiner 7c and then fed back to the reduced pressure chamber 1, so that the exhaust gas is reused. When maintenance of the gas refiner 7c is performed, the exhaust gas is fed back through a by-pass line 9.